STYN210(S) thru STYN1010(S)
Discrete Thyristors(SCRs)
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Dimensions TO-220AB
G
A
K
A
K
G
ABSOLUTE RAT ING S (limi ting values)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (180° conduction angle) Tc = 100°C10 A
IT(AV) Average on-state current (180° conduction angle) Tc = 100°C 6.4 A
ITSM Non repetitive surge peak on-state
current tp = 8.3 ms 105 A
tp = 10 ms 100
I²tI
²
t Value tp = 10 ms A2S
dI/dt Critical rate of rise of on-state current
50 A/µs
Tstg
Tj Storage junction temperature range
O peratin g jun ction temp erature range - 40 to + 150
- 40 to + 125 °C
Tl Maximum lead soldering temperature during 10s at 4.5mm from case
Dimensions TO-263(D2PAK)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .315 .350
E 9.65 10.29 .380 .405
E1 6.22 8.13 .245 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.20 0 .008
R 0.46 0.74 .018 .029
K
A
50
Gate supply:IG = 100mA dIG/dt = 1A/µs
260 °C
TYN
210 410 610 810 1010
VDRM
VRRM Repetitive peak off-state voltage
Tj = 125°C 200 400 600 800 1000 V
G
STYN210(S) thru STYN1010(S)
Discrete Thyristors(SCRs)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■
STANDARD
THERMA L RESISTANCES
Symbol Test Conditions TYNx08(S) Unit
IGT VD = 12 V RL = 33 W MAX. 15 mA
VGT MAX. V
VGD VD = VDRM
I
G
=40mA dIG/dt = 0.5
RL = 3.3 kW Tj = 110°C MIN. 0.2 V
IH IT = 100 mA Gate open MAX. 30 mA
ILIG = 1.2 IGT TYP mA
dV/dt VD = 67 % VDRM Gate open Tj = 110°C MIN. 200 V/µs
VTM ITM = 20 A tp = 380 µs Tj = 25°C MAX. 1.6 V
Tj = 110°C
IDRM
IRRM
VDRM
VRRM
Tj = 25°C MAX.
Tj = 110°C mA
Symbol Parameter Value Unit
Rth(j-c) Junction to case (DC) 2.5 °C/W
Rth(j-a) Junction to ambient (DC) TO-220AB 60 °C/W
S =1.0 cm ²
S= copper surface under tab
TO-263
PRODUCT SELECTOR
Part Number Voltage (xxx) Sensitivity Package
x10 15 mA TO-220AB
200~~1000
200~~1000
STYNx10S 15 mA TO-263
OTHER INFORMATION
Note: x = volta ge
Part Number Marking Weight Base Quantity Packing mode
1.5 g 50 Tube
STYN x10 STYN x10 2.3 g 250 Bulk
STYNx10S
STYN
STYNx10S
Tj = 25°C
Tj = 25°C 1.5
tgt VD = VDRM µsA/ Tj = 25°C
Tj = 25°C
Tj = 25°C
tq VD = 67 % VDRM I
TM
=20A V
R
=25V
dI
TM
/dt=30 µs d
VD
/dt=50VA/ /µs
rated
rated
TYP
TYP 70
0.01
2
50
2µs
µs
µs
mA
45
