SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 FEBRUARY 1996 COMPLEMENTARY TYPE- BCX51-BCX54 BCX52 ~ BCX55 BCX53 - BCX56 PARTMARKING DETAILS ~ BCX51 BCX52 BCX53 BCX51 ~-AA BCX52 -AE BCX53) -AH BCX51-10 AC BCX52-10- AG BCX53-10~ AK BCX51-16- AD BCX52-16~- AM BCX53-16- AL ABSOLUTE MAXIMUM RATINGS. SoTse PARAMETER SYMBOL | BCX51]} BCX52| BCX53} UNIT Collector-Base Voltage Vego -45 -60 -100 Vv Collector-Emitter Voltage VeEo -45 -60 -80 Vv Emitter-Base Voltage Vego 6 Vv Peak Pulse Current low -15 A Continuous Collector Current le -1 A Power Dissipation at T,,,,=25C Prot 1 Ww Operating and Storage Temperature Range Tj:Tstg -65 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL |MIN. |TYP. |MAX. |UNIT ;CONDITIONS. Collector-Base BCX53 {Viprjicao |-100 Vv Ie =-100pA Breakdown BCX52 -60 Vv Io =-100HA Voltage BCX51 -45 Vv I; =-100nA Collector-Emitter BCX53 {Vigryceo |[-80 Vv le =-10mMA* Breakdown BCX52 -60 le =-10mA* Voltage BCX51 ~45 Ic =-10mA* Emitter-Base Vienepo 1-5 Vv Ie =-10nA Breakdown Voltage Collector Cut-Off Current {lego -0.1 [pA 9 [Veg =-30V -20 {pA Veg =-30V, Tamp = 150C Emitter Cut-Off Current leBo -20 = |nA Veg =-4V Collector-Emitter Vee(sat) -0.5 |V Ie =-500mA, |p =-50mMA* Saturation Voltage Base-Emitter Veeton) -1.0 |V Ic =-500MA, Veg =-2V* Turn-On Voltage Static Forward Current ge 25 Io =-5mMA, Ve_ =-2V* Transfer Ratio 40 250 lo =-150mA, Vogp =-2V* 25 Ic =-500MA, Veg =-2V* -10 63 160 Ic =-150MA, Veg =-2V* -16 100 250 Ic =-150MA, Voce =-2V* Transition Frequency fr 150 MHz |I- =-50mA, Veg =-10V, f=100MHz Output Capacitance Cobo 25 pF Veg =-10V, f= 1MHz *Measured under pulsed conditions. Pulse width=300ys. Duty cycle <2% 3-34