SGA1263Z - RF Micro Devices, Inc. (RFMD)

Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SGA1263Z

DCto4000MHz SILICON GERMANIUM HBT

CASCADABLE GAIN BLOCK

RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar

Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain

response for application to 4GHz. This RFIC is a 2-stage design that pro-

vides high isolation of up to 40dB at 2GHz and is fabricated using the lat-

est SiGe HBT 50GHz FT process, featuring one-micron emitters with

VCEO>7V. These unconditionally stable amplifiers have less than 1dB gain

drift over 125°C operating range (-40°C to +85°C) and are ideal for use

as buffer amplifiers in oscillator applications covering

cellular, ISM, and narrowband PCS bands.

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Frequency MHz

Isolation vs. Frequency

DCto4000MHz Operation

Single Supply Voltage

Excellent Isolation, >50dB at

900MHz

50 In/Out, Broadband

Match for Operation from DC-

4GHz

Unconditionally Stable

Applications

Buffer Amplifier for Oscillator

Applications

Broadband Gain Blocks

IF Amp

DS111011



Package: SOT-363

SGA1263Z

DCto 4000MH

z Silicon Ger-

manium HBT

Cascadable

Gain Block

Parameter Specification Unit Condition

Min. Typ. Max.

Small Signal Gain 15 17 19 dB 850 MHz

12 15 17 dB 1950MHz

Output Power at 1dB Compression -13.0 -9.5 dBm 1950MHz

Output Third Order Intercept Point -1.5 1.0 dBm 1950MHz

Determined by Return Loss (<-10dB) MHz

Input Return Loss 9.5 11.2 dB 1950MHz

Output Return Loss 7 8 dB 1950MHz

Noise Figure 2.5 4.0 dB 1950MHz

Device Voltage 2.5 2.8 3.1 V

Thermal Resistance 255 °C/W

Test Conditions: VS=5V, ID=8mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-20dBm, RBIAS=270, TL=25°C, ZS=ZL=50

2 of 6 DS111011

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SGA1263Z

Absolute Maximum Ratings

Parameter Rating Unit

Max Device Current (ID) 20 mA

Max Device Voltage (VD) 5 V

Max RF Input Power -12 dBm

Max Junction Temperature (TJ) +150 °C

Operating Temperature Range (TL) -40 to +85 °C

Max Storage Temperature +150 °C

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

IDVD<(T

J-TL)/RTH, j-l

Parameter Specification Unit Condition

Min. Typ. Max.

Bandwidth T=25°C

Frequency Range DC 4000 MHz

Device Bias T=25°C

Operating Voltage 2.8 V

Operating Current 8 mA

500MHz T=25°C

Gain 16.0 dB

Noise Figure 2.7 dB

Output IP3 4.0 dBm

Output P1dB -6.9 dBm

Input Return Loss 8.5 dB

Isolation 61.6 dB

850MHz T=25°C

Gain 15.7 dB

Noise Figure 2.7 dB

Output IP3 2.6 dBm

Output P1dB -7.8 dBm

Input Return Loss 8.9 dB

Isolation 48.4 dB

1950 MHz T=25°C

Gain 14.7 dB

Noise Figure 3.0 dB

Output IP3 2.8 dBm

Output P1dB -7.4 dBm

Input Return Loss 8.8 dB

Isolation 35.6 dB

2400 MHz T=25°C

Gain 14.2 dB

Noise Figure 2.8 dB

Output IP3 0.2 dBm

Output P1dB -7.0 dBm

Input Return Loss 8.4 dB

Isolation 33.6 dB

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free

per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric

materials and red phosphorus as a flame retardant, and <2% antimony in

solder.

3 of 6DS111011

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SGA1263Z

Application Schematic for +5V Operation at 900MHz

Application Schematic for +5V Operation at 1900MHz

Pin Function Description

1GND

Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possi-

ble.

2GND

Same as Pin 1.

3RF IN

RF input pin. This pin requires the ise of an external DC blocking capacitor chosen for the frequency of operation.

4VCC

Supply Connection. This pin should be bypassed with suitable capacitor(s).

5GND

Same as Pin 1.

6RF OUT

RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-

ation.

270 Ω

100pF

1uF 68pF

100pF

50 Ω

microstrip

50 Ω

microstrip

VCC=+5V

1,2,5

Note: A bias resistor is needed for

stability over temperature

270 Ω

68pF

1uF 22pF

68pF

50 Ω

microstrip

50 Ω

microstrip

VCC=+5V

1,2,5

Recommended Bias Resistor Values

Supply

Voltage(Vs) 3.6V 5V 7.5V 9V 12V

Rbias

(Ohms) 100 275 588 775 1150

4 of 6 DS111011

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SGA1263Z

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S21, Id =8 mA, T=+25C

Frequency MHz

dB dB

Frequency MHz

S12, Id =8 mA, T=+25C

S22, Id =8 mA, T=+25C

Frequency MHz

S11, Id =8 mA, T=+25C

S11, Id=8 mA, Ta= +25C S22, Id=8 mA, Ta= +25C

Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

5 of 6DS111011

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SGA1263Z

Package Dimensions

Pad Layout

Dimensions in inches [millimeters]

OUT

I N

Notes:

1. Provide a large ground pad area under device

pins 1, 2, 4, & 5 with many plated via holes as

shown.

2. Dimensions given for 50 Ohm RF I/O lines are for

31 mil thick Getek. Scale accordingly for different

board thicknesses and dielectric contants.

3. We recommend 1 or 2 ounce copper. Measure-

ments for this data sheet were made on a 31 mil

thick Getek with 1 ounce copper on both sides.

6 of 6 DS111011

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SGA1263Z

Part Identification Marking

Ordering Information

Ordering Code Description

SGA1263Z 7" Reel with 3000 pieces

SGA1263ZSQ Sample bag with 25 pieces

SGA1263ZSR 7” Reel with 100 pieces

SGA1263Z-EVB1 850MHz, 5V Operation PCBA

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