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FDMC610P P-Channel PowerTrench(R) MOSFET -12 V, -80 A, 3.9 m Features General Description Max rDS(on) = 3.9 m at VGS = -4.5 V, ID = -22 A This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 6.4 m at VGS = -2.5 V, ID = -16 A State-of-the-art switching performance Lower output capacitance, gate resistance, and gate charge boost efficiency Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction Applications RoHS Compliant High power density DC-DC synchronous buck converter High side switching for high end computing D D Pin 1 G S S S D S D S D G D D Pin 1 S Top D Bottom Power 33 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current - Continuous ID TC = 25 C - Continuous TJ, TSTG Units V 8 V -80 (Note 1a) - Pulsed PD Ratings -12 -22 A -200 Power Dissipation TC = 25 C Power Dissipation TA = 25 C 48 (Note 1a) Operating and Storage Junction Temperature Range 2.4 -55 to +150 W C Thermal Characteristics RJC Thermal Resistance, Junction to Case TC = 25 C RJA Thermal Resistance, Junction to Ambient TA = 25 C 2.6 (Note 1a) 53 C/W Package Marking and Ordering Information Device Marking 23AB Device FDMC610P (c)2013 Fairchild Semiconductor Corporation FDMC610P Rev.C Package Power 33 1 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC610P P-Channel PowerTrench(R) MOSFET November 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 A , VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient -12 ID = -250 A , referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = -9.6 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = 8 V, VDS = 0 V V -13 mV/C -1 A 100 nA -1 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 A , referenced to 25 C VGS = -4.5 V, ID = -22 A 2.8 3.9 rDS(on) Static Drain to Source On Resistance VGS = -2.5 V, ID = -16 A 3.7 6.4 VGS = -4.5 V, ID = -22 A,TJ = 125 C 3.6 5.4 VDD = -5 V, ID = -22 A 16 VDS = -6 V, VGS = 0 V, f = 1 MHz 0.89 1.25 nF 1620 2270 pF 1440 2015 pF 3.6 7.2 ns gFS Forward Transconductance -0.4 -0.7 3.1 mV/C m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance 0.1 Switching Characteristics td(on) Turn-On Delay Time 24 39 tr Rise Time 37 60 ns td(off) Turn-Off Delay Time 193 309 ns tf Fall Time 87 139 ns Qg Total Gate Charge 71 99 nC Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge VDD = -6 V, ID = -22 A, VGS = -4.5 V, RGEN = 6 VDD = -6 V, ID = -22 A, VGS = -4.5 V 13 nC 14 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -2 A (Note 2) -0.6 -1.2 V VGS = 0 V, IS = -22 A (Note 2) -0.8 -1.2 V IF = -22 A, di/dt = 100 A/s 36 58 ns 19 33 nC Note: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. b. 125 C/W when mounted on a minimum pad of 2 oz copper a. 53 C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. (c)2013 Fairchild Semiconductor Corporation FDMC610P Rev.C 2 www.fairchildsemi.com FDMC610P P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted 3 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 200 -ID, DRAIN CURRENT (A) VGS = -4.5 V VGS = -3.5 V 150 VGS = -3 V VGS = -2.5 V 100 VGS = -1.8 V 50 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 2 VGS = -2.5 V 1 VGS = -3 V VGS = -4.5 V 0 50 100 150 200 -ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 30 ID = -22 A VGS = -4.5 V rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m) 1.4 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID = -22 A 20 10 TJ = 125 oC 0 1.0 100 125 150 TJ, JUNCTION TEMPERATURE (oC) TJ = 25 oC 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 200 -IS, REVERSE DRAIN CURRENT (A) 1000 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) VGS = -3.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 2.0 Figure 1. On Region Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -1.8 V 150 VDS = -5 V 100 TJ = 150 oC TJ = 25 oC 50 TJ = -55 oC 0 0.5 1.0 1.5 2.0 VGS = 0 V 100 TJ = 150 oC 10 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 2.5 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2013 Fairchild Semiconductor Corporation FDMC610P Rev.C 3 1.2 www.fairchildsemi.com FDMC610P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 20000 ID = -22 A VDD = -4 V Ciss 10000 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = -6 V VDD = -8 V 1.5 Coss f = 1 MHz VGS = 0 V 0.0 0 20 40 60 Crss 1000 0.1 80 1 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 500 100 o 100 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) RJC = 2.6 C/W 80 VGS = -4.5 V 60 Limited by Package 40 VGS = -2.5 V 20 100 s 1 ms 10 10 ms 1 0.1 THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 1s RJA = 125 oC/W DC TA = 25 oC 0 25 50 75 100 125 0.01 0.01 150 100 ms 0.1 10 s CURVE BENT TO MEASURED DATA 1 10 50 -VDS, DRAIN to SOURCE VOLTAGE (V) o TC, CASE TEMPERATURE ( C) Figure 9. Maximum Continuous Drain Current vs Case Temperature Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 2000 1000 SINGLE PULSE o RJA = 125 C/W o 100 TA = 25 C 10 1 0.1 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation (c)2013 Fairchild Semiconductor Corporation FDMC610P Rev.C 4 www.fairchildsemi.com FDMC610P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZJA(t) = r(t) x RJA SINGLE PULSE 0.001 0.0001 -4 10 -3 10 RJA = 125 C/W Peak TJ = PDM x ZJA(t) + TA Duty Cycle, D = t1 / t2 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve (c)2013 Fairchild Semiconductor Corporation FDMC610P Rev.C 5 www.fairchildsemi.com FDMC610P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted FDMC610P P-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout (c)2013 Fairchild Semiconductor Corporation FDMC610P Rev.C 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2013 Fairchild Semiconductor Corporation FDMC610P Rev.C 7 www.fairchildsemi.com FDMC610P P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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