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November 2013
©2013 Fairchild Semiconductor Corporation
FDMC610P Rev.C
www.fairchildsemi.com
1
FDMC610P P-Channel PowerTrench® MOSFET
Top
Power 33
Bottom
GSSS
DDDD
Pin 1
S
S
S
G
D
D
D
D
Pin 1
FDMC610P
P-Channel PowerTrench® MOSFET
-12 V, -80 A, 3.9 mΩ
Features
Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
State-of-the-art switching performance
Lower output capacitance, gate resistance, and gate charge
boost efficiency
Shielded gate technology reduces switch node ringing and
increases immunity to EMI and cross conduction
RoHS Compliant
General Description
This P-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
High side switching for high end computing
High power density DC-DC synchronous buck converter
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -12 V
VGS Gate to Source Voltage ±8 V
ID
Drain Current - Continuous TC = 25 °C -80
A - Continuous (Note 1a) -22
- Pulsed -200
PD
Power Dissipation TC = 25 °C 48 W
Power Dissipation TA = 25 °C (Note 1a) 2.4
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case TC = 25 °C 2.6 °C/W
RθJA Thermal Resistance, Junction to Ambient TA = 25 °C (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
23AB FDMC610P Power 33 13 ’’ 12 mm 3000 units
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2
©2013 Fairchild Semiconductor Corporation
FDMC610P Rev.C
FDMC610P P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = -250 μA , VGS = 0 V -12 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = -250 μA , referenced to 25 °C -13 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = -9.6 V, VGS = 0 V -1 μA
IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.4 -0.7 -1 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = -250 μA , referenced to 25 °C 3.1 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = -4.5 V, ID = -22 A 2.8 3.9
mΩVGS = -2.5 V, ID = -16 A 3.7 6.4
VGS = -4.5 V, ID = -22 A,TJ = 125 °C 3.6 5.4
gFS Forward Transconductance VDD = -5 V, ID = -22 A 16 S
Ciss Input Capacitance VDS = -6 V, VGS = 0 V,
f = 1 MHz
0.89 1.25 nF
Coss Output Capacitance 1620 2270 pF
Crss Reverse Transfer Capacitance 1440 2015 pF
RgGate Resistance 0.1 3.6 7.2 Ω
td(on) Turn-On Delay Time
VDD = -6 V, ID = -22 A,
VGS = -4.5 V, RGEN = 6 Ω
24 39 ns
trRise Time 37 60 ns
td(off) Turn-Off Delay Time 193 309 ns
tfFall Time 87 139 ns
QgTotal Gate Charge VDD = -6 V, ID = -22 A,
VGS = -4.5 V
71 99 nC
Qgs Gate to Source Charge 13 nC
Qgd Gate to Drain “Miller” Charge 14 nC
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = -2 A (Note 2) -0.6 -1.2 V
VGS = 0 V, IS = -22 A (Note 2) -0.8 -1.2 V
trr Reverse Recovery Time IF = -22 A, di/dt = 100 A/μs 36 58 ns
Qrr Reverse Recovery Charge 19 33 nC
Note:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
53 °C/W when mounted on a
1 in2 pad of 2 oz copper
a.
125 °C/W when mounted on
a minimum pad of 2 oz copper
b.
G
DF
DS
SF
SS
G
DF
DS
SF
SS
www.fairchildsemi.com
3
©2013 Fairchild Semiconductor Corporation
FDMC610P Rev.C
FDMC610P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
0.00.51.01.52.0
0
50
100
150
200
VGS = -3 V
VGS = -2 .5 V
VGS = -3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = - 1 .8 V
VGS = -4.5 V
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SO URCE VOLTAGE (V)
On Region Characteristics Figure 2.
0 50 100 150 200
0
1
2
3
VGS = -3.5 V
PULSE DU R A TION = 80 μs
DUTY CYCLE = 0.5% MA X
NORMALIZED
DRAIN TO SOURCE ON- RESISTANCE
-ID, DR AIN CURRENT (A)
VGS = -3 V
VGS = -2.5 V
VGS = -4.5 V
VGS = -1.8 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.8
0.9
1.0
1.1
1.2
1.3
1.4
ID = -22 A
VGS = -4 .5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEM PER ATURE (oC)
vs Junction Te mperature Figure 4.
1.01.52.02.53.03.54.04.5
0
10
20
30
TJ = 125 oC
ID = -22 A
TJ = 25 oC
-VGS, GA TE TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0.5 1.0 1.5 2.0 2.5
0
50
100
150
200
TJ = 150 oC
VDS = -5 V
PULSE DURA T ION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLT AGE (V)
Figure 6.
0.00.20.40.60.81.01.2
0.001
0.01
0.1
1
10
100
1000
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWA R D VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
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4
©2013 Fairchild Semiconductor Corporation
FDMC610P Rev.C
FDMC610P P-Channel PowerTrench® MOSFET
Figure 7.
0 20406080
0.0
1.5
3.0
4.5
ID = -22 A
VDD = -8 V
VDD = -4 V
-VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GA TE CHARGE (nC)
VDD = -6 V
Gate Charge Characteristics Figure 8.
0.1 1 10 20
1000
10000
20000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs Drain
to Source Voltage
Figure 9.
25 50 75 100 125 150
0
20
40
60
80
100
VGS = -2.5 V
Limited by Package
RθJC = 2.6 oC/W
VGS = -4.5 V
-ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
Maximum Continuous Drain
Current vs Case Temperature Figure 10.
0.01 0.1 1 10 50
0.01
0.1
1
10
100
500
10 s
CURVE BENT TO
MEASURED DATA
100 μs
10 ms
DC
1 s
100 ms
1 ms
-ID, DRAIN CURRENT (A)
-VDS, DRAIN to S OUR CE VOLTA GE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
Forward Bias Safe
Operating Area
Figure 11. Single Pulse Maximum Power Dissipation
10-4 10-3 10-2 10-1 110
100 1000
0.1
1
10
100
1000
2000
P(PK), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
t, PULSE WIDTH (sec)
Typical Characteristics TJ = 25 °C unless otherwise noted
www.fairchildsemi.com
5
©2013 Fairchild Semiconductor Corporation
FDMC610P Rev.C
FDMC610P P-Channel PowerTrench® MOSFET
Figure 12.
10-4 10-3 10-2 10-1 110
100 1000
0.0001
0.001
0.01
0.1
1
2
r(t), NORMALIZED EFFE CT IV E TRANSIENT
THERMAL RESISTANCE
SINGLE PULSE
DUTY CYCLE-DESCENDING ORDER
t, RECTANGUL AR PULSE DURA TION (sec)
D = 0.5
0 .2
0 .1
0 .05
0 .02
0 .01
PDM
t1t2
NOTES:
Duty Cycle, D = t1 / t2
ZθJA(t) = r(t) x RθJA
Peak TJ = PDM x ZθJA(t) + TA
RθJA = 125 °C/W
Junction-to-Ambient Transient Thermal Response Curve
Typical Characteristics TJ = 25 °C unless otherwise noted
www.fairchildsemi.com
6
©2013 Fairchild Semiconductor Corporation
FDMC610P Rev.C
FDMC610P P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
FDMC610P P-Channel PowerTrench® MOSFET
©2013 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com
FDMC610P Rev.C
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