BC850W - Infineon Technologies

BC856W...BC860W

1 Dec-11-2001

PNP Silicon AF Transistors



For AF input stages and driver applications



High current gain



Low collector-emitter saturation voltage



Low noise between 30 Hz and 15 kHz



Complementary types:

BC846W, BC847W, BC848W

BC849W, BC850W (NPN)

1

3

VSO05561

2

Type Marking Pin Configuration Package

BC856AW

BC856BW

BC857AW

BC857BW

BC857CW

BC858AW

BC858BW

BC858CW

BC859AW

BC859BW

BC859CW

BC860BW

BC860CW

3As

3Bs

3Es

3Fs

3Gs

3Js

3Ks

3Ls

4As

4Bs

4Cs

4Fs

4Gs

1 = B

2 = E

3 = C

SOT323

BC856W...BC860W

2 Dec-11-2001

Maximum Ratings

Parameter Symbol BC856W BC857W

BC860W

BC858W

BC859W

Unit

Collector-emitter voltage VCEO 65 45 30 V

Collector-base voltage VCBO 80 50 30

Collector-emitter voltage VCES 80 50 30

Emitter-base voltage VEBO 5 5 5

DC collector current IC100 mA

Peak collector current ICM 200 mA

Peak base current IBM 200

Peak emitter current 200

IEM

Total power dissipation, TS = 124 °C Ptot 250 mW

Junction temperature Tj150 °C

Storage temperature Tst

g

-65 ... 150

Thermal Resistance

Junction - soldering point1) RthJS



105 K/W

Electrical Characteristics at T

A

= 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

BC856W

BC857/860W

BC858/859W

V(BR)CEO

65

45

30

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0

BC856W

BC857/860W

BC858/859W

V(BR)CBO

80

50

30

-

1For calculation of RthJA please refer to Application Note Thermal Resistance

BC856W...BC860W

3 Dec-11-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0

BC856W

BC857/860W

BC858/859W

V(BR)CES

80

50

30

-

V

Emitter-base breakdown voltage

IE = 1 µA, IC = 0

V(BR)EBO 5 - -

Collector cutoff current

VCB = 30 V, IE = 0

ICBO - - 15 nA

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO - - 5 µA

DC current gain 1)

IC = 10 µA, VCE = 5 V

hFE-group A

hFE-group B

hFE-group C

hFE

-

140

250

480

-

DC current gain 1)

IC = 2 mA, VCE = 5 V

hFE-group A

hFE-group B

hFE-group C

hFE

125

220

420

180

290

520

250

475

800

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

-

75

250

300

650

mV

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

-

700

850

-

Base-emitter voltage 1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

600

-

650

-

750

820

1) Pulse test: t ≤=300µs, D = 2%

BC856W...BC860W

4 Dec-11-2001

Electrical Characteristics at TA = 25 °C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

AC characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

fT- 250 - MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb - 3 5 pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb - 10 15

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-gr.A

hFE-gr.B

hFE-gr.C

h11e

-

2.7

4.5

8.7

-

k



Open-circuit reverse voltage transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-gr.A

hFE-gr.B

hFE-gr.C

h12e

-

1.5

2

3

-

10-4

Short-circuit forward current transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-gr.A

hFE-gr.B

hFE-gr.C

h21e

-

200

330

600

-

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-gr.A

hFE-gr.B

hFE-gr.C

h22e

-

18

30

60

-



S

Noise figure

IC = 200 µA, VCE = 5 V, RS = 2 k



,

f = 1 kHz,



f = 200 Hz

BC856W

BC857W

BC858W

F- - 10 dB

Noise figure

IC = 200 µA, VCE = 5 V, RS = 2 k



,

f = 1 kHz,



f = 200 Hz

BC859W

BC860W

F

-

1

4

Equivalent noise voltage

IC = 200 µA, VCE = 5 V, RS = 2 k



,

f = 10 ... 50 Hz

BC860W

Vn- - 0.11 µV

BC856W...BC860W

5 Dec-11-2001

Collector-base capacitance CCB = f (VCBO

)

Emitter-base capacitance CEB = f (VEBO)

0

4

10 510 10

EHP00376

VCB0

CEB0

V

6

2

EB0

V

EBO

C

8

10

pF

12

CB0

C

-1 0 1

CCBO

(

)

BC 856...860

)

Total power dissipation Ptot = f (TS)

0 20 40 60 80 100 120 °C 150

TS

0

50

100

150

200

mW

300

P

tot

Permissible pulse load

Ptotmax / PtotDC = f (tp)

10

EHP00377

-6

0

10

5

D

=

5

10

1

5

10

2

3

10

-5

10

-4

10

-3

10

-2

10

0

s

0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t

p

=

DT

t

p

T

totmax

tot

P

DC

P

p

t

Transition frequency fT = f (IC)

VCE = 5V

10 10 10 10

EHP00378

f

mA

MHz

-1 0 1 2

5

T

3

10

2

1

10

5

C

Ι

BC856W...BC860W

6 Dec-11-2001

Collector cutoff current ICBO = f (TA)

VCB = 30V

10 0 50 100 150

EHP00381

TA

5

10

nA

10

Ι

CB0

5

10

4

3

2

1

0

-1

max

typ

C

Collector-emitter saturation voltage

IC = f (VCEsat), hFE = 20

10 0

EHP00380

VCEsat

10

mA

10

2

1

0

-1

5

V

0.3 0.5

100

25

-50

0.1 0.2 0.4

C

Ι

C

DC current gain hFE = f (IC)

VCE = 5V

10 10 10 10

EHP00382

h

mA

-2 -1 12

FE

3

10

2

0

10

5

10

1

0

10

5

555

100

25

-50

C

Ι

C

Base-emitter saturation voltage

IC = f (VBEsat), hFE = 20

0

10

EHP00379

BEsat

V

0.6 V 1.2

-1

10

0

10

1

2

10

5

Ι

C

mA

0.2 0.4 0.8

C

25

C

100

C

-50

C

BC856W...BC860W

7 Dec-11-2001

h parameter he = f (IC) normalized

VCE = 5V

10 10 10

BC 856...860 EHP00383

mA

-1 0 1

5

e

h

2

10

-1

10

1

10

0

5

h11e

h12e

h21e

h22e

VCE = 5 V

C

Ι

h parameter he = f (VCE) normalized

IC = 2mA

00102030

BC 856...860 EHP00384

V

CE

h

e

V

1.0

0.5

1.5

2.0

= 2 mA

h

11

12

h

22

C

Ι

Noise figure F = f (VCE)

IC = 0.2mA, RS = 2k



, f = 1kHz

0

10 10 10 10

BC 856...860 EHP00385

VCE

F

V

10

5

15

dB

20

-1012

5 5

Noise figure F = f (f)

IC = 0.2mA, VCE = 5V, RS = 2k



10 10 10 10

BC 856...860 EHP00386

F

kHz

dB

-2 -1 1 2

20

10

0

5

15

f

0

10

BC856W...BC860W

8 Dec-11-2001

Noise figure F = f (IC)

VCE = 5V, f = 1kHz

10 10 10 10

BC 856...860 EHP00388

F

mA

-3 -2 0 1

20

10

0

5

15

-1

10

= 1 M

100 k

10 k

dB

500

1 k

ΩΩΩ

S

R

Ω

C

Ι

Noise figure F = f (IC)

VCE = 5V, f = 120Hz

10 10 10 10

BC 856...860 EHP00387

F

mA

-3 -2 0 1

20

10

0

5

15

-1

10

= 1 M 100 k 10 k

dB

500

1 k

ΩΩΩ

S

R

Ω

C

Ι

Noise figure F = f (IC)

VCE = 5V, f = 10kHz

10 10 10 10

BC 856...860 EHP00389

mA

-3 -2 0 1

20

10

0

5

15

-1

10

dB

F

Ι

C

= 1 MRSΩ

Ω

100 k

Ω

10 k

500 Ω

Ω

1 k