2N4338-2N4876 Numerical Index ale MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS || REPLACE- | PAGE P Blu y y = fee @ | Vi @l Bl a cd D J CE PE FE c CESAT ic = -_ 5 Tee 2) | nent | numper | USE 3 ce = g| Koom@le) 4, 5 ale == @ 25C | B| C | (volts) | (volts) |S | (min) (max) 5] (volts) 5 3 5/2 2N4338 thru Field Effect Transistors, see Table on Page 1-166 2N4343 2N4346 LPA 5.0W]A 60} 0 2N4347 S|N LPA 100W | c 140} 120] 0 15 60 2.0A 2N4348 S}N LPA 120W ) Cc 140} 120] 0 15 60 5.0A 2N4350 S|[N LPA 7.0W]C 65 40 }0 10 |] 200 | 0.35A 300M } T pu Field Effect Transistors, see Table on Page 1+166 2N4354 S| P LNA 350M } A 125 60! 69) 0 25 O.1M 500M 7 T 2N4355 s|P LNA 350M | A 125 60 60,0 60 0.1M 500M | T 2N4356 | S| P LNA} 350M]A] 125] so} 80}0] 25 0.1M 500M | T 2N4359 S| P LNA 360M {A 200 45 4510 50 | 600 1.0M 0,25 LOM 50 j,E 2N4360 Field Effect Transistor, see Table on Page 1-166 2N4361 thru Thyristors, see Table on Page 1-154 2N4380 Breet) Field Effect Transistors, see Table on Page 1-166 2N4383 S|N RFA 800M | A 200 40 3010 1000 |E 120M | T 2N4384 S|N RFA 500M | A 200 40 3040 1000 | E 120M | T 2N4385 S|[N RFA 800M {A 200 40 30 | 0 1000 |E 120M [T 2N4.386 S|N RFA 500M FA 200) 40 30 | 0 1000 | E 120M | T 2N4387 S|] P 20W | A 200 40 40 | 0 25 | 100 500M 2N4388 S|] P 20W | A 200 60 6040 25 | 100 500M 2N4389 S|P HSS 200M 1A 125! 12 12 10 30 | 180 LOM Q.15 10M 4 4.0 JE 2N4390 S{N MSS 500M [A 175 120) 120 ]/0 20 2.0M 50M | T 2N4391 thru Field Effect Transistors, see Table on Page 1-166 2N4393 2N4395 S|N 2N3715 | 7-125 LPA | 62.5W }C 60 40 |0 50 | 170 2.0A 4M |T 2N4396 S|N 2N3715 | 7-125 LPA | 62.5W | C 80 60/0 40 1170 2,0A 4M |T 2N4398 S|P 7-167 LPA 200W | C 200 40 40 |0 15 60 154A 1.0 15A 40 /E AM |T 2N4399 S| P 7-167 LPA 200W | C 200 60 60/0 15 60 15A 1.0 15A 40 ]E 4M [T 2n4400 S|N 5-34 HSA 310M FA 135 66 40 40 50 | 150 150M 0.4 150M 20 |E 200M |T 2N4401 SIN 5-34 HSA 310M | A 135 60 40 | 0 |100 | 300 150M 0.4 150M 40 /E 250M | T 2N4402 S|P 5-39 HSA 310M | A 135 40 40/0 50 | 150 150M 0.4 150M 30 |E 150M |T 2N4403 S| P 5-39 HSA 310M |A 135 40 40 10 |100 | 300 150M 0.4 150M 60 |E 200M | T 2N4409 S}N 5-45 MSS 310M TA 135 80 50 [0 60 | 400 1.0M 0.2 1.0M 2N4410 S|N 5-45 MSS 310M | A 135 120 80 | 0 60 | 400 1.0M. 0.2 1.0M 2N4411 |S] P 8-302 | MSA| 150M ]A | 200 15} 12 ]0 | 40 0.5M 400M | T 2N4412 S|N RFA 600M | A 200 40 30 |0 1000 JE LOOM | T 2N4412A |S] P RFA 600M }A 200) 60 60 )0 120 |E 20M |T 2N4413 S|P RFA 400M FA 200 40 30 |0 1000 |E 100M /T 2N4413A |S | P RFA 400M }A 200 60 60 ]0 120 JE 20M |T 2N4414 S|]P RFA 600M |A 200 40 30 |0 1000 JE 100M |T 2N4414A |S | P REA 600M 1A 200 60 60 1O 100 JE 20M )T 2N4415 S| P RFA 400M FA 200 40 30/0 1000 | E 100M jT 2N4415A |S | P RFA 400M | A 200 60 60 |O 100 JE 20M | T pune Field Effect Transistors, see Table on Page 1-166 2N4418 S|N 2N4 264 | 5-29 MSA 250M 4A 125 40 40 |s 40 | 120 10M 500M {T 2N4419 SIN 2N4264 | 5-29 MSA 250M [A 125 30 30 {4S 30 LOM 400M 1 T 2N4420 S|N MPS3646] 5-95 MSA 250M |A 125 40 40/5 30 | 120 30M 350M }T 2N4421 SIN MPS 3646] 5-95 MSA 250M [A 125 30 30 1S 25 30M 300M )T 2N4422 |S |N | MPS3646] 5-95 MSA | 250M {A | 125 40] 40 |s { 30 ]120 30M 350M |T 2N4423 SIN MPS3640] 5-93 MSA 250M | A 125 12 1248 40 1150 30M 400M | T 2N4424 SIN MPS 3711) 5-100 MSA 360M |A 150 40 40 |0 180 |E 2N4425 SUN MSA 560M [A 150 40 40 |O {180 2M 2N4427 S|N LPA 3.5W ]C 40 20 |0 10 | 200 O.1A 500M | T 2N44 28 S]N LPA 3.5W [C 55 35 |0 20 | 200 |0.05A 700M |T 2N4429 S JN LPA 5.0W |C 55 35 |0 20 | 200 |0.05A 700M | T 2N4430 S[N LPA 10W 1c 55 40 |0 20 | 200 Q.,1A 600M |T 2N4431 S|N LPA 18w | Cc 55 40 ]0 20 | 200 O.1A 600M | T 2N4432 S|N RFA 600M ;A 50 30 10 40 {130 6.0M 45 }E 2N4432A 1S [N RFA 600M |A 50 30 |0 80 1150 6.0M 90 JE 2N4440 SIN LPA | 11.6W |C 65 40 |0 10 | 200 |0.1254 400M |T 2N4441 thru Thyristors, see Table on Page 1-154 2N4444 2n4576 [Ss |N | 2N3716 ]7-125 | HPA | 150W |c | 200| 100] 80 ]o | 50/150] 1.0A | 0.8] 5.0A | 25 |B | 30K JE 2N4851 they Unijunction Transistors, see Table on Page 1-174 2N4853 2N4854 c 1 aa HSS 300M JA 200 60 40 |o 50 1.0M 200M |T 2N4855 omplementary Pair Hss | 300M JA | 200] 60] 40 jo } 25 1.0M 200M |T 2N4856 thru Field Effect Transistors, see Table on Page 1-166 2N4861 ane Unijunction Transistors, see Table on Page 1+174 2N4872 S |P HSS 700M |C 200 12 12 |0 50 |120 10M 0.13 1L.OM | 9.0 {E 2N4873 SIN HSS 360M 1A 200 40 15 {oO {110 {150 10M 0.2 10M 7.0 1E 2N4874 SIN RFA 720M |A 175 30 20 [0 200 |E 900M [T 2N4875 Ss |N RFA 720M |A 175 40 25 |0 200 JE 800M |T 2N4876 S {N RFA 720M {A 175 40 30 10 200 |E 650M |T 1-1482N4214-3N86 THYRISTOR INDEX (continued) Numerical Index PAGE a Veom/Vrom ty Ver TYPE REPLACEMENT NUMBER A v c mA V 2N42 14 4-36 1.6 TOG 125 0.1 1.5 2N4215 4-36 1.6 150 125 0.1 1.5 2N4216 4-36 1.6 200 125 0.1 .5 IN4316 9.2 100 150 15 1.2 2N4317 9.2 200 150 15 1.2 2N4318 9.2 300 150 15 1.2 2N4319 9.2 400 150 15 1.2 2N4361 70 100 250 5.0 2N4362 70 200 250 5.0 2N4363 70 400 250 5.0 2N4364 70 600 250 5.0 9N4365 70 800 250 5.0 2N4366 70 1000 250 5.0 2N4367 70 1200 250 5:0 2N4368 70 1400 250 5.0 2N4369 70 1600 250 5.0 2N4370 70 1800 250 5.0 2N4371 70 100 250 5:0 2N4372 70 200 250 5.0 2N4373 70 400 250 5.0 2N4374 70 600 250 5.0 2N4375 70 300 250 5.0 2N4376 70 1000 250 5.0 2N4377 70 1200 250 5.0 2N4378 70 1400 250 5.0 2N4379 70 1600 250 5.0 2N4380 70 1800 250 5.0 QNAAG1 4-38 8.0 50 100 30 115 2N4442 4-38 8.0 200 100 30 1.5 2N4443 4-38 8.0 400 100 30 1.5 2N4444 4-38 8.0 600 100 30 1.5 2N5060 4-40 0.8 30 125 0.2 0.8 2N5061 4-40 0.8 60 125 0.2 0.8 2N5062 4-40 0.8 100 125 0.2 0.8 2N5063 4-40 0.8 150 125 0.2 0.8 2N5164 4G? 20 50 100 40 115 2N5165 4-42 20 200 100 40 1.5 2N5166 4-42 20 400 100 40 1.5 2N5167 4-42 20 600 100 40 115 2N5168 4-42 20 50 100 40 115 2N5169 had? 20 200 100 40 1.5 2N5170 4-42 20 400 100 40 1.5 QN5171 4-42 20 600 100 40 1.5 3N58 0.064 40 150 0.001 0.65 3N59 0.064 40 150 0.001 0.65 3N60 0.064 40 150 0.001 0.65 3N80 0.127 40 150 0.001 0.65 3N8L 0.127 65 150 0.001 0.65 3N82 0.127 100 150 0.001 0.65 3N83 0.032 70 125 9.15 0.80 3N84 0.111 40 125 0.01 0.65 3N85 0.111 100 125 0.01 0.65 3N86 0.127 65 150 0.001 0.65 1-162