A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
BVCBO IC = 50 mA 36 V
BVCES IC = 100 mA 36 V
BVCEO IC = 100 mA 18 V
BVEBO IE = 10 mA 4.0 V
ICES VCE = 15 V 15 mA
hFE VCE = 5.0 V IC = 5.0 A 20 --- ---
COB VCB = 12.5 V f = 1.0
MHz 400 pF
PG
ηηC VCE = 12.5 V POUT = 100 W f = 88 MHz
10
60 dB
%
NPN SILICON RF POWER TRANSISTOR
VMB100-12
DESCRIPTION:
The ASI VMB100-12 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 20 A
VCBO
36 V
VCEO 18 V
VEBO 4.0 V
PDISS
270 W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +150 OC
θθJC 0.65 OC/W
PACKAGE STYLE .500 6L FLG
ORDER CODE: ASI10747
MINIMUM
inches / mm
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MAXIMUM
.220 / 5.59
.007 / 0.18
.510 / 12.95
inches / mm
.725 / 18.42
H
DIM
K
L
I
J.970 / 24.64 .980 / 24.89
.170 / 4.32
N
M.120 / 3.05 .135 / 3.43
.150 / 3.43 .160 / 4.06
.125 / 3.18
.090 / 2.29 .105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.14
E
F
.725/18,42
I
G
J
KL
M
A
D
C
B
2x ØN
FULL R
H
.835 / 21.21 .865 / 21.97
.210 / 5.33.200 / 5.08
