wN <> w BFX 340 Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Hochstromschalter, Relaistreiber, Leistungsverstarker, Strom bis 5 A Applications: High current switches, relay drivers, and power amplifiers, current up to 5A Besondere Merkmale: @ Hohe Stromverstarkung @ Hohe Sperrspannung Features: @ High current gain @ High reverse voltage @ Verlustleistung 5 W @ Fower dissipation 5 W Abmessungen in mm Dimensions in mm Kollektor mit Gehaduse verbunden Collector connected with case Normgehause Case 5 C3 DIN 41873 JEDEC TO 39 Gewicht - Weight max. 1,59 Absolute Grenzdaten Absolute maximum ratings Kollektor-Basis-Sperrspannung UcBo 120 v Collector-base voltage Kollektor-Emitter-Sperrspannung UcEO 60 Vv Collector-emitter voltage Emitter-Basis-Sperrspannung UVEBO 6 Vv Emitter-base voltage Kollektorstrom Io 5 A Collector current Gesamtverlustleistung Total power dissipation lamb = 25C Prot 870 mw case = 25C Prot 5 WwW Sperrschichttemperatur fj 200 C Junction temperature Lagerungstemperaturbereich 'stg 55 ... +200 C Storage temperature range B 2/V.2.517/0875 A 1 321BFX 340 Warmewiderstande Thermal resistances Prot 0 50 100 C case - Min. Typ. Max. Sperrschicht-Umgebung RinJA 200 C/W Junction ambient Sperrschicht-Gehduse Junction case Statische KenngrBen DC characteristics tamb = 25C Kollektorreststrom Rihic 35 C/W Collector cut-off current Ugg = 60V Emitterreststrom Emitter cut-off current U, EB =4 Vv Ices) 10 pA TEBo *) 10 pA Kollektor-Basis-Durchbruchspannung Collector-base breakdown voltage Ig =5mA UBR)CBO 5 120 Vv t *) AQL=0,65, |) 2B = 0,01, tp =0.3ms 322BFX 340 Min. Typ. Max. Kollektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage Ig = 100 mA UBR)CEO*)') 60 Vv Emitter-Basis-Durchbruchspannung Emitter-base breakdown voltage IE =1mA UBR)EBO 6 Vv Kollektor-Sattigungsspannung Collector saturation voltage Ig = 5A, Ip = 500 mA UcEsat *)') 0,75 1 Vv Basis-Sattigungsspannung Base saturation voltage Io = 5A Ip = 500 mA Upesat *)) 13 1,6 Vv Kollektor-Basis-Gleichstromverhdaltnis DC forward current transfer ratio Usp = 2ViIQ = 2A Ace ') 40 150 Dynamische KenngrBen AC characteristics lamb = 25C Transitfrequenz Gain bandwidth product Ucge = 5V, Ig = 500 mA, f = 20 MHz FT 70 MHz Kollektor-Basis-Kapazitat Collector-base capacitance Ucs =10V, f = 1 MHz CoBo 100 pF Emitter-Basis-Kapazitat Emitter-base capacitance Cc Vep=O5V, = 1 MHz EBO 400 pF Schaltzeiten Switching characteristics Io~ 5A, Tp re Ipo zz 500 mA, tamb = 25C Einschaltzeit on) 0,6 HS Turn-on time Ausschaltzeit loft) 1,2 ys Turn-off time *) AQL = 0,65%, 1 Pp ) rT 0,01, t = 0,3 ms *) siene MeBschaltung see test circuit 323BFX 340 Rg = 50 Q t =t;<20ns 1 p T 0,01 _ 50V tp = 10 HS o- mel op LE 761253 MeBschaltung fiir: Test circuit for: 4 or off Ie Jp =12 mA 800 mA 600 4 = 25C 400 200 UE 324 Oszilloskop: Oscilloscope: R,2100 kQ 721736 Th 0,5 1,0 15 V Uce BFX 340 T2AN38 Th 0 0,001 0,01 0,1 1A lo~ tamb = 25 C 0 10 20 V Ucn 721137 Tk lamb = 25 C Ue_R 325