ataDlacinahceM
serutaeF
scitsiretcarahClamrehTdnasgnitaRmumixaM
(TA=25oC unless otherwise noted.)
For general purpose applications.
This diode features low turn-on voltage. This device are
protected by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
Metal-on-silicon Schottky barrier device which is protected by a
PN junction guard ring.
The low forward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and coupling
diodes for fast switching and low logic level applications.
This diode is also available in the DO-35 case with type
designation BAT86.
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
Cathode Band Color: Green
68SAB
edoiDlangiS-llamS edoiDykttohcS
retemaraPlobmySeulaVtinU
egatlovesreversuounitnoCV
R
05stloV
TtatnerrucsuounitnocdrawroF
bma
52=
o
CI
F
002
)1(
Am
tnerrucdrawrofkaepevititepeR ,s1<ptta υ< T,5.0
bma
52=
o
CI
MRF
005
)1(
Am
TtanoitapissidrewoP
bma
52=
o
CP
tot
002
)1(
Wm
riatneibmaotnoitcnujecnatsiserlamrehTR
θAJ
003
)1(o
W/C
erutarepmetnoitcnuJT
j
521
o
C
egnarerutarepmetgnitarepotneibmAT
bma
521+ot56-
o
C
egnarerutarepmetegarotST
S
051+ot56-
o
C
437
Notes: 1. V alid provided that electrodes are kept at ambient temperature.
438
scitsiretcarahClacirtcelE
(TJ=25oC unless otherwise noted.)
retemaraPlobmySnoitidnoCtseT.niM.pyT.xaMtinU
egatlovnwodkaerbesreveRV
R)RB(
I
R
01= u)deslup(A05-- stloV
tnerrucegakaeLI
R
V
R
V52=-2.05.0 uA
egatlovdrawroFV
F
003<pttseTesluP u,s δ%2<
I
F
Am1.0=
I
F
Am1=
I
F
Am01=
I
F
Am03=
I
F
Am001=
-
-
-
-
-
002.0 572.0 563.0 064.0 007.0
003.0 083.0 054.0 006.0 009.0
tloV
ecnaticapaCC
tot
V
R
zHM1=f,V1=--8
pF
emityrevoceresreveRt
rr
I
F
I,Am01=
R
,Am01=
I
R
Am1= --5
ns
