MG600J2YS61A - Mitsubishi Electric Semiconductor

MG600J2YS61A

2004-10-01 1/13

MITSUBISHI IGBT Module

MG600J2YS61A(600V/600A 2in1)

High Power Switching Applications

Motor Control Applications

• Integrates a complete half bridge power circuit and fault-signal output circuit in one package.

(short circuit and over temperature)

• The electrodes are isolated from case.

• Low thermal resistance

• VCE (sat) = 2.2 V (typ.)

Equivalent Circuit

Signal terminal

1. G (L) 2. FO (L) 3. E (L) 4. VD

5. G (H) 6. FO (H) 7. E (H) 8. Open

5

6

7

1

2

3

E1/C2

Ｃ1

E2

FO

OT

4

MG600J2YS61A

2004-10-01 2/13

Package Dimensions

1. G (L) 2. FO (L) 3. E (L) 4. VD

5. G (H) 6. FO (H) 7. E (H) 8. Open

Signal Terminal Layou t

1. G (L) 2. FO (L) 3. E (L) 4. VD

5. G (H) 6. FO (H) 7. E (H) 8 . Open

Weight: 375 g

2.54

8

6

7

5

2.54

25.4 ± 0.6

2.54

4

2

3

1

MG600J2YS61A

2004-10-01 3/13

Maximum Rat ings (Ta = 25°C)

Stage Characteristics Symbol Rating Unit

Collector-emitter vol tage VCES 600 V

Gate-emitter voltage VGES ±20 V

DC IC 600

Coll e ctor curren t 1 ms ICP 1200

A

DC IF 600

Forward current 1 ms IFM 1200

A

Inverter

Collector power dissipation (Tc = 25°C ) PC 2770 W

Control voltage (OT) VD 20 V

Fault input voltage VFO 20 V

Control

Fault input current IFO 20 mA

Junction temperature Tj 150 °C

Storage temperature range Tstg −40~125 °C

Operation temperature range Tope −20~100 °C

Isolation voltage Visol 2500 (AC 1 min) V

Module

Screw torque ⎯ 3 (M5) N･m

Electrical Characteristics (Tj = 25°C)

1. Inverter Stage

Characteristics Symbol Test Condition Min Typ. Max Unit

VGE = ±20 V, VCE = 0 ⎯ ⎯ +3/−4 mA

Gate leakage current IGES VGE = +10 V, VCE = 0 ⎯ ⎯ 100 nA

Coll e ctor cut-off curre n t ICES V

CE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA

Gate-emitter cut-off voltage VGE (off) V

CE = 5 V , IC = 600 mA 6.0 7. 0 8.0 V

Tj = 25°C ⎯ 2.2 2.5

Collector-emitter saturation voltage VCE ( sat) VGE = 15 V,

IC = 600 A Tj = 125°C ⎯ ⎯ 2.8 V

Input capacitance Cies V

CE = 10 V, VGE = 0, f = 1 MHz ⎯ 125 ⎯ nF

Turn-on delay time td (on) 0.10

⎯ 1.00

Turn-off time toff ⎯ ⎯ 2.00

Switching time

Fall time tf ⎯ ⎯ 0.50

Reverse recovery time trr

VCC = 300 V, IC = 600 A

VGE = ±15 V, RG = 5.1 Ω

(Note 1)

⎯ ⎯ 0.50

µs

Forward voltage VF I

F = 600 A ⎯ 2.2 2.6 V

Note 1: Switching time test circuit & timing chart

2. Control (Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Fault output current OC VGE = 15 V 720 ⎯ ⎯ A

Over temperature OT ⎯ 100 ⎯ 125 °C

Fault output delay time td (Fo) V

CC = 300 V, VGE = ±15 V ⎯ ⎯ 6.5 µs

MG600J2YS61A

2004-10-01 4/13

3. Module (Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Inverter IGBT stage ⎯ ⎯ 0.045

Junction to case thermal resistance Rth (j-c) Inverter FRD stage ⎯ ⎯ 0.068 °C/W

Case to fin thermal resistance Rth (c-f) With silicon compound ⎯ 0.013 ⎯ °C/W

Switching Time Test Circuit

Timing Chart

IC

RG

L

IF

−VGE

VCC

td (on) t

d (off)

trr 90%

90%

10% 10%

tf

IC

VGE

10%

Ir

r

90% Irr

20% Irr

MG600J2YS61A

2004-10-01 5/13

Remark



Short circuit capability is 6 µs after fault output signal.

Please keep following condition to use fault output signal.

• VCC <

=

375 V

• 13.8 V <

=

VGE

<

=

16.0 V

• RG>

=

5.1 Ω

• Tj<

=

125°C



To use this product, VGE must be provided higher than 13.8 V.

In case VGE is less than 13.8 V, fault signal FO may not be output even under error conditions.

Characteristics Symbol Min Typ. Max Unit

P-N power terminal supply voltage VCC ⎯ 300 375 V

Gate voltage VGE 13.8 15 16 V

Gate re si stance RG 5.1 ⎯ ⎯ Ω

Switching frequency fc ⎯ ⎯ 20 kHz

 For parallel use of this product, please use the same rank for both VCE (sat) and VF among IGBT in

parallel without fail.

VCE (sat)

VCE (sat) Min Max

20 1.8 2.0

22 1.9 2.2

24 2.1 2.4

26 2.3 2.5

VF

VF Min Max

D 1.9 2.2

E 2.1 2.4

F 2.3 2.6

MG600J2YS61A

2004-10-01 6/13

Common emitter

Tj = 125°C

0

05 1 2 3 4

100

300

400

600

VGE = 20 V

9 V

500

200

10 V

12 V

15 V

Common emitter

Tj = 25°C

0

05 1 2 3 4

100

300

400

600

VGE = 20 V

9 V

500

200

10 V

12 V

15 V

Collector-emitter voltage VCE (V)

IC – VCE

Collector cu rren t IC (A)

Collector-emitter voltage VCE (V)

Collector cu rren t IC (A)

IC – VCE

MG600J2YS61A

2004-10-01 7/13

0

020 5 10 15

2

4

6

8

12 Common emitter

Tj = 125°C

300 A

10

IC = 900 A

600 A

Collector-emitter voltage VCE (V)

Gate-emitter voltage VGE (V)

VCE – VGE

Gate-emitter voltage VGE (V)

VCE – VGE

Collector-emitter voltage VCE (V)

0

020 5 10 15

2

4

6

8

12 Common emitter

Tj = 25°C

300 A

10

IC = 900 A

600 A

Gate-emitter voltage VGE (V)

VCE – VGE

Collector-emitter voltage VCE (V)

0

020 5 10 15

2

4

6

8

12 Common emitter

Tj = 40°C

300 A

10

IC = 900 A

600 A

MG600J2YS61A

2004-10-01 8/13

Common emitter

VCE = 5 V

0

012 4 8

400

600

1000

−40 C

800

200

Tj = 125°C

25°C

−40°C

125°C

Common cathode

VGE = 0

0

03 1 2

100

300

400

600

500

200

Tj = 25°C

0.5 1.5 2.5

Forward voltage VF (V)

Forward current IF (A)

IF – VF

Gate-emitter voltage VGE (V)

IC – VGE

Collector cu rren t IC (A)

MG600J2YS61A

2004-10-01 9/13

Common emitter

VCC = 300 V

IC = 600 A Tj = 25°C

VGE = ±15 V T j = 125°C

tf

0

100 25 10

300

1000

3000

10000

5 15 20

tr

toff

ton

td (on)

td (off)

Gate resistance RG (

Ω

)

Switching time – RG

Switching time (ns)

Collector current IC (A)

Switching time (ns)

Switching time – IC

Common emitter

VCC = 300 V

RG = 5.1 Ω T

j = 25°C

VGE = ±15 V T j = 125°C

0

10 700 200

30

1000

10000

100 300 500

tf

td (on)

3000

100

300

400 600

tr

ton

toff

td (off)

MG600J2YS61A

2004-10-01 10/13

Collector current IC (A)

Switching loss Eon, E off (mJ)

Eon, Eoff – IC

Gate resistance RG (

Ω

)

Eon, Eoff – RG

Switching loss Eon, E off (mJ)

Common emitter

VCC = 300 V

IC = 600 A Tj = 25°C

VGE = ±15 V Tj = 125°C

0

10 25 10

30

100

300

1000

5 15 20

Eoff

Eon

0

1700 300

3

10

30

100

100 400 600

Eoff

Eon

Common emitter

VCC = 300 V

RG = 5.1 Ω T

j = 25°C

VGE = ±15 V Tj = 125°C

200 500

MG600J2YS61A

2004-10-01 11/13

Common emitter

VCC = 300 V

RG = 5.1 Ω T

j = 25°C

VGE = ±15 V Tj = 125°C

0

10 600 200

30

100

300

1000

100 300 500

Irr

trr

400

Forward curre nt IF (A)

Irr, trr – IF

Rever se reco very ti me trr (ns)

Rever es recovery curr e nt Irr (A)

Forward current IF (A)

Rever es recovery loss Eds w (mJ)

Edsw – IF

0

0.10 700 300

0.30

1.00

3.00

10.00

100 400 600200 500

Common emitter

VCC = 300 V

RG = 5.1 Ω T

j = 25°C

VGE = ±15 V Tj = 125°C

MG600J2YS61A

2004-10-01 12/13

Common emitter

RL = 0.5 Ω

Tj = 25°C

0

06000 2000

100

200

400

500

1000 3000 50004000

300

VCE = 0

100 V

300 V

200 V

0

4

8

12

16

20

Capacitance C (pF)

Charge QG (nC)

VCE, VGE – QG

Collector-emitter voltage VCE (V)

C – VCE

Gate-emi tter voltag e VGE (V)

VGE = 0 V

f = 1 MHz

Tc = 25° C

0.01

100 100

1000

3000

100000

1000000

0.1 1 10

10000

Cres

Coes

Cies

30000

300000

300

MG600J2YS61A

2004-10-01 13/13

0.001

0.001 0.01 0.1 1 10

1

0.1

0.01

Diode sta

g

e

Transistor sta

g

e

Tc = 25° C

Collector-emitter voltage VCE (V)

Revers e bias SOA

Collector cu rren t IC (A)

Pulse width tw (s)

Rth (j-c) (°C/W)

Rth – tw

Tj = 125°C

RG = 5.1Ω

VGE = ±15 V

0

1700

10

30

1000

10000

200 600

100

300

3000

3

100 300 400 500