tm
July 2006
FDD8580/FDU8580 N-Channel PowerTrench® MOSFET
©2006 Fairchild Semiconductor Corporation
FDD8580/FDU8580 Rev. A
www.fairchildsemi.com1
FDD8580/FDU8580
N-Channel PowerTrench® MOSFET
20V, 35A, 9mΩ
Features
Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A
Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A
Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V
Low gate resistance
100% Avalanche tested
RoHS compliant
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 20 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current -Continuous (Package Limited) 35
A -Continuous (Die Limited) 58
-Pulsed (Note 1) 159
EAS Single Pulse Avalanche Energy (Note 2) 66 mJ
PDPower Dissipation 49.5 W
TJ, TSTG Operating and Storage Temperature -55 to 175 °C
RθJC Thermal Resistance, Junction to Case TO-252,TO-251 3.03 °C/W
RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W
RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDD8580 FDD8580 TO-252AA 13’’ 12mm 2500 units
FDU8580 FDU8580 TO-251AA N/A(Tube) N/A 75 units
I-PAK
(TO-251AA)
GDS
D
G
S
FDD8580/FDU8580 N-Channel PowerTrench® MOSFET
FDD8580/FDU8580 Rev. A www.fairchildsemi.com2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 20 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, referenced to
25°C 17.3 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 16V,
VGS = 0V
1μA
TJ = 150°C250
IGSS Gate to Source Leakage Current VGS = ±20V ±100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA1.2 1.8 2.5 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to
25°C -6.3 mV/°C
rDS(on) Drain to Source On Resistance
VGS = 10V, ID = 35A 6.6 9.0
mΩ
VGS = 4.5V, ID = 33A 9.3 13.0
VGS = 10V, ID = 35A
TJ = 175°C 10.6 14.5
gFS Forward Transcondductance VDS = 5V,ID = 35A 61 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 10V, VGS = 0V,
f = 1MHz
1085 1445 pF
Coss Output Capacitance 340 450 pF
Crss Reverse Transfer Capacitance 205 310 pF
RgGate Resistance f = 1MHz 1.3 Ω
Switching Characteristics
td(on) Turn-On Delay Time
VDD = 10V, ID = 35A
VGS = 10V, RGS = 27Ω
7 14 ns
trRise Time 11 20 ns
td(off) Turn-Off Delay Time 59 94 ns
tfFall Time 34 54 ns
Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V
VDD = 10V
ID = 35A
Ig = 1.0mA
19 27 nC
Qg(5) Total Gate Charge at 5V VGS = 0V to 5V 10 14 nC
Qgs Gate to Source Gate Charge 3.5 nC
Qgd Gate to Drain “Miller”Charge 3.9 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 35A 0.95 1.25 V
VGS = 0V, IS = 15A 0.85 1.2
trr Reverse Recovery Time IF = 35A, di/dt = 100A/μs 26 39 ns
Qrr Reverse Recovery Charge IF = 35A, di/dt = 100A/μs 19 29 nC
Notes:
1: Pulse time < 300μs, Duty cycle = 2%.
2: Starting TJ = 25oC, L = 0.3mH, IAS = 21A ,VDD = 18V, VGS = 10V.
FDD8580/FDU8580 N-Channel PowerTrench® MOSFET
FDD8580/FDU8580 Rev. A www.fairchildsemi.com3
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1. On Region Characteristics
01234
0
20
40
60
80
100
120
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 4.0V
VGS = 3.5V
VGS = 4.5V
VGS = 10V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized
0 20 40 60 80 100 120
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT(A)
VGS = 10V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
On-Resistance vs Drain
Current and Gate Voltage
Figure 3.
-80 -40 0 40 80 120 160 200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = 35A
VGS = 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
Normalized On Resistance vs Junction
Temperature
Figure 4.
246810
5
10
15
20
25
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
TJ = 175oC
TJ = 25oC
ID = 35A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
VGS, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
123456
0
20
40
60
80
100
120
VDD = 5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
TJ = - 55oC
TJ = 25oC
TJ = 175oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1E-3
0.01
0.1
1
10
100
TJ = -55oC
TJ = 25oC
TJ = 175oC
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
200
Source to Drain Diode Forward
Voltage vs Source Current
FDD8580/FDU8580 N-Channel PowerTrench® MOSFET
FDD8580/FDU8580 Rev. A www.fairchildsemi.com4
Figure 7.
0 5 10 15 20
0
2
4
6
8
10
VDD = 13V
VDD = 7V
VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = 10V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
3000
20
Capacitance vs Drain to Source Voltage
Figure 9.
0.01 0.1 1 10 100 1000
1
10
100
TJ = 25oC
TJ = 125oC
TJ = 150oC
tAV, TIME IN AVALANCHE(ms)
IAS, AVALANCHE CURRENT(A)
Unclamped Inductive Switching
Capability
Figure 10.
25 50 75 100 125 150 175
0
10
20
30
40
50
60
VGS = 10V
VGS = 4.5V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE(oC)
RθJC = 3.03oC/W
CURRENT LIMITED
BY PACKAGE
Maximum Continuous Drain Current vs
Case Temperature
Figure 11.
110
0.1
1
10
100
500
LIMITED BY
PACKAGE
10us
DC
10ms
1ms
100us
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25OC
40
Forward Bias Safe Operating Area Figure 12. Single
10-5 10-4 10-3 10-2 10-1 100101
10
100
1000
10000
VGS = 10V
SINGLE PULSE
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 TC
–
150
-----------------------
Pulse Maximum Power
Dissipation
Typical Characteristics TJ = 25°C unless otherwise noted
FDD8580/FDU8580 N-Channel PowerTrench® MOSFET
FDD8580/FDU8580 Rev. A www.fairchildsemi.com5
Figure 13. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 100101
0.01
0.1
1
0.005
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJC
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
Typical Characteristics TJ = 25°C unless otherwise noted
FDD8580/FDU8580 Rev. A www.fairchildsemi.com6
FDD8580/FDU8580 N-Channel PowerTrench® MOSFET
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which, (a) are intended for surgical implant into the body, or
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
UltraFET®
VCX™
Wire™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
