FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET 20V, 35A, 9m Features tm General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Max rDS(on) = 9m at VGS = 10V, ID = 35A Max rDS(on) =13m at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V Low gate resistance Application 100% Avalanche tested Vcore DC-DC for Desktop Computers and Servers RoHS compliant VRM for Intermediate Bus Architecture D G I-PAK G D S (TO-251AA) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Ratings 20 Units V VGS Gate to Source Voltage 20 V Drain Current -Continuous (Package Limited) 35 ID -Continuous (Die Limited) 58 -Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature (Note 1) (Note 2) A 159 66 mJ 49.5 W -55 to 175 C C/W Thermal Characteristics RJC Thermal Resistance, Junction to Case TO-252,TO-251 3.03 RJA Thermal Resistance, Junction to Ambient TO-252,TO-251 100 C/W RJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 C/W Package Marking and Ordering Information Device Marking FDD8580 Device FDD8580 Package TO-252AA Reel Size 13'' Tape Width 12mm Quantity 2500 units FDU8580 FDU8580 TO-251AA N/A(Tube) N/A 75 units (c)2006 Fairchild Semiconductor Corporation FDD8580/FDU8580 Rev. A 1 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET July 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250A, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V IGSS Gate to Source Leakage Current VGS = 20V 20 V mV/C 17.3 1 TJ = 150C 250 A 100 nA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250A, referenced to 25C -6.3 VGS = 10V, ID = 35A 6.6 9.0 VGS = 4.5V, ID = 33A 9.3 13.0 VGS = 10V, ID = 35A TJ = 175C 10.6 14.5 rDS(on) gFS Drain to Source On Resistance Forward Transcondductance VDS = 5V,ID = 35A 1.2 1.8 mV/C m S 61 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz 1085 1445 pF 340 450 pF 205 310 pF f = 1MHz 1.3 VDD = 10V, ID = 35A VGS = 10V, RGS = 27 7 14 ns 11 20 ns 59 94 ns 34 54 ns 19 27 nC 10 14 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V Qg(5) Total Gate Charge at 5V VGS = 0V to 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller"Charge VDD = 10V ID = 35A Ig = 1.0mA 3.5 nC 3.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 35A 0.95 1.25 VGS = 0V, IS = 15A 0.85 1.2 IF = 35A, di/dt = 100A/s 26 39 ns IF = 35A, di/dt = 100A/s 19 29 nC V Notes: 1: Pulse time < 300s, Duty cycle = 2%. 2: Starting TJ = 25oC, L = 0.3mH, IAS = 21A ,VDD = 18V, VGS = 10V. FDD8580/FDU8580 Rev. A 2 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted 120 4.0 ID, DRAIN CURRENT (A) 100 80 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V VGS = 4.0V VGS = 4.5V 60 VGS = 3.5V 40 20 0 0 1 2 3 4 VGS = 3.5V 3.5 3.0 VGS = 4.0V 2.5 VGS = 4.5V 2.0 1.5 1.0 0.5 VGS = 10V 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.8 1.4 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 3. Normalized On Resistance vs Junction Temperature 120 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 100 VDD = 5V 80 60 40 TJ = 175oC TJ = 25oC 20 TJ = - 55oC 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 Figure 5. Transfer Characteristics FDD8580/FDU8580 Rev. A ID = 35A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 20 15 TJ = 175oC 10 TJ = 25oC 5 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 120 ID, DRAIN CURRENT (A) 100 25 ID = 35A VGS = 10V 1.6 0 40 60 80 ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 200 100 VGS = 0V 10 1 TJ = 175oC TJ = 25oC 0.1 0.01 1E-3 0.0 TJ = -55oC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 3000 VDD = 7V 6 4 VDD = 10V VDD = 13V 2 0 0 5 10 15 Qg, GATE CHARGE(nC) 1000 Coss Crss 100 0.1 20 Figure 7. Gate Charge Characteristics 60 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) TJ = 25oC 10 TJ = 125oC 1 0.01 CURRENT LIMITED BY PACKAGE 50 VGS = 10V 40 30 VGS = 4.5V 20 10 o TJ = 150oC RJC = 3.03 C/W 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 0 25 1000 Figure 9. Unclamped Inductive Switching Capability 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 10. Maximum Continuous Drain Current vs Case Temperature 500 P(PK), PEAK TRANSIENT POWER (W) 10000 10us 100 ID, DRAIN CURRENT (A) 20 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 100 100us 10 1ms LIMITED BY PACKAGE 10ms 1 0.1 1 f = 1MHz VGS = 0V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25OC 10 VDS, DRAIN-SOURCE VOLTAGE (V) DC 40 Figure 11. Forward Bias Safe Operating Area FDD8580/FDU8580 Rev. A TC = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 I = I25 175 - T C ---------------------150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, PULSE WIDTH (s) 0 10 1 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZJC 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 0.005 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD8580/FDU8580 Rev. A 5 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. 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Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 FDD8580/FDU8580 Rev. A 6 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET TRADEMARKS