LITE-ON DCC
RELEASE
LITE-ON Technology Corp. / Optoelectronics
No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660
http://www.liteon.com/opto
IR Emitter and Detector
Product Data Sheet
LTR-4206
Spec No.: DS-50-92-0072
Effective Date: 08/14/2002
Revision: D
BNS-OD-FC001/A4
BNS-OD-FC001/A4
BNS-OD-FC001/A4
BNS-OD-FC001/A4
Propert y of LITE-ON Onl y
FEATURES
* WIDE RANGE OF COLLECTOR CURRENT
* LENSED FOR HIGH SENSITIVITY
* LOW COST PLASTIC PACKAGE
PACKAGE DIMENSIONS
NOTES:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25mm(.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm(.059") max.
4. Lead spacing is measured where the leads emerge from the package.
5. Specifications are subject to change without notice for performance improvement.
Part No. : LTR-4206 DATA SHEET
Page : 1 of 4
BNS-OD-C131/A4
Pro pert y of LITE-ON Onl y
ABSOLUTE MAXIMUM RATINGS AT TA=25
PARAMETER
MAXIMUM RATING
UNIT
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
Operating Temperature Range
-40 to + 85
Storage Temperature Range
-55 to + 100
Lead Soldering Temperature
[1.6mm(.063") From Body]
260 for 5 Seconds
Part No. : LTR-4206 DATA SHEET
Page : 2 of 4
BNS-OD-C131/A4
Pro pert y of LITE-ON Onl y
ELECTRICAL / OPTICAL CHARACTERISTICS AT TA=25
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST
CONDITION
BIN NO.
Collector-Emitter
Breakdown Voltage
V(BR)CEO
30
V
IC = 1mA
Ee = 0mW/cm2
Emitter-Collector
Breakdown Voltage
V(BR)ECO
5
V
IE = 100μA
Ee = 0mW/cm2
Collector Emitter
Saturation Voltage
VCE(SAT)
0.4
V
IC = 0.5mA
Ee = 1mW/cm2
Rise Time
Tr
10
μs
VCC = 5V
IC = 1mA
RL = 1KΩ
Fall Time
Tf
10
μs
Collector Dark Current
ICEO
100
nA
VCE = 10V
Ee = 0mW/cm2
On State Collector Current
IC(ON)
0.8
2.4
mA
VCE = 5V
Ee = 1mW/cm2
λ=940nm
BIN C
1.6
4.8
BIN D
3.2
9.6
BIN E
6.4
BIN F
Part No. : LTR-4206 DATA SHEET
Page : 3 of 4
BNS-OD-C131/A4
Pro pert y of LITE-ON Onl y
TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES
(25 Ambient Temperature Unless Otherwise Noted)
0.5
0.7
0.8
0.9
1.0
FIG.5 SENSITIVITY DIAGRAM
Relative Sensitivity
100
120
80
60
40
20
0-40
FIG.2 COLLECTOR POWER DISSIPATION
VS AMBIENT TEMPERATURE
Collector Power Dissipation Pc(mW)
100
0.3 0.1 0.2 0.4 0.6
tr
tf
o
0o
10 o
20 30o
70
80
90o
o
50
60
o
o
40
o
o
-20 0 20 40 60 80
VS AMBIENT TEMPERATURE
FIG.1 COLLECTOR DARK CURRENT
Ta-Ambient Temperature- C
40080
o
120
Iceo-Collector Dark Current- A
0
0.01
0.1
100
1
10
140
Tr Tf-Rise and Fall Time- s
120
100
20
0
80
60
40
200
180
160
RL-Load Resistance-K
FIG.3 RISE AND FALL TIME
02 4 6
810
VS LOAD RESISTANCE
PW =1ms
F =100Hz
VRL=1V
Vcc=5V
VS AMBIENT TEMPERATURE
FIG.1 COLLECTOR DARK CURRENT
Ta-Ambient Temperature- C
40080
o
120
Iceo-Collector Dark Current- A
0
0.01
0.1
100
1
10
Ta-Ambient Temperature- CTa-Ambient Temperature- C
oo
4
FIG.4 RELATIVE COLLECTOR CURRENT
Ee-Irradiance-mW/cm
VS IRRADIANCE
013
25
2
Relative Collector Current
3.0
2.0
1.0
0
4.0 Vce= 5V
Part No. : LTR-4206 DATA SHEET
Page : 4 of 4
BNS-OD-C131/A4