Features
1 of 6
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
SGA4586Z
DC to 4000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
The SGA4586Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-
figuration featuring one-micron emitters provides high FT and excellent thermal per-
formance. The heterojunction increases breakdown voltage and minimizes leakage
current between junctions. Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Only two DC-blocking capacitors, a
bias resistor, and an optional RF choke are required for operation.
Gain & Return Loss vs. Freq. @T L= + 25° C
0.0
8.0
16.0
24.0
32.0
0.0 1.0 2.0 3.0 4.0 5.0
Frequency (GHz)
Gain (dB)
-40.0
-30.0
-20.0
-10.0
0.0
Return Loss (dB)
GAIN
IRL
ORL
High Gain: 17.9dB at
1950MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
DS100916
Package: SOT-86
SGA4586ZDC
to 4000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 22.0 24.0 26.5 dB 850MHz
17.9 dB 1950MHz
16.3 dB 2400 MHz
Output Power at 1dB Compression 16.5 dBm 850MHz
13.7 dBm 1950MHz
Output Third Intercept Point 28.6 dBm 850MHz
27.7 dBm 1950MHz
Bandwidth Determined by Return
Loss (>10dB) 4000 MHz >10dB
Input Return Loss 19.4 dB 1950MHz
Output Return Loss 21.5 dB 1950MHz
Noise Figure 1.9 dB 1950MHz
Device Operating Voltage 3.6 V
Device Operating Current 41 45 49 mA
Thermal Resistance
(Junction - Lead) 97 °C/W
Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=100Ω, TL=25°C, ZS=ZL=50Ω