SUD50P04-15
Vishay Siliconix
New Product
Document Number: 71176
S-00830—Rev. A, 24-Apr-00 www.vishay.com FaxBack 408-970-5600
1
P-Channel 40-V (D-S), 175C MOSFET
VDS (V) rDS(on) () ID (A)
–
40
0.015 @ VGS = –10 V –50
–
40
0.023 @ VGS = –4.5 V –45
TO-252
SGD
Top View
Drain Connected to Tab
Order Number:
SUD50P04-15
S
G
D
P-Channel MOSFET
Parameter Symbol Limit Unit
Drain-Source Voltage VDS –40
V
Gate-Source V oltage VGS 20
V
Continuous Drain Current
bTC = 25C
ID
–50
A
Continuous
Drain
Currentb
TC = 100C
I
D–40
A
Pulsed Drain Current IDM –150
A
Continuous Source Current (Diode Conduction) IS–50
Maximum Power Dissipation
bTC = 25C
PD
100b
W
Maximum
Power
Dissipationb
TA = 25C
P
D3a
W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 C
Parameter Symbol Typical Maximum Unit
MaximumJunction
-
to
-
Ambient
at 10 sec.
RthJA
15 18
C/W
M
ax
i
mum
J
unc
ti
on-
t
o-
A
m
bi
en
ta
Steady State
R
thJA 40 50 C/W
Maximum Junction-to-Case RthJC 1.2 1.5
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See SOA curve for voltage derating.
SUD50P04-15
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2 Document Number: 71176
S-00830—Rev. A, 24-Apr-00
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –250 mA–40 V
Gate Threshold V oltage VGS(th) VDS = VGS, ID = –250 mA –1.0
V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = –40 V, VGS = 0 V –1
mA
Zero
Gate
Voltage
Drain
Current
I
DSS VDS = –40 V, VGS = 0 V, TJ = 125C –50 m
A
On-State Drain CurrentaID(on) VDS = –5 V, VGS = –10 V –120 A
DiS OS Ri a
VGS = –10 V, ID = –30 A 0.012 0.015
W
Drain-Source On-State ResistancearDS(on) VGS = –10 V, ID = –30 A, TJ = 125C 0.024 W
VGS = –4.5 V, ID = –20 A 0.018 0.023
Forward T ransconductance agfs VDS = –15 V, ID = –30 A 20 S
Dynamicb
Input Capacitance Ciss 5400
F
Output Capacitance Coss VGS = 0 V, VDS = –25 V, f = 1 MHz 640 pF
Reverse T ransfer Capacitance Crss 300
Total Gate ChargecQg
V20VV10VI50A
85 130
C
Gate-Source ChargecQgs VDS = –20 V, VGS = –10 V, ID = –50 A 25 nC
Gate-Drain ChargecQgd 15
T urn-On Delay Timectd(on)
V20VR04W
15 25
Rise T ime ctrVDD = –20 V, RL = 0.4 W
I50AV 10VR25W
380 580
ns
T urn-Off Delay T imectd(off)
DD ,L
ID^ –50 A, VGEN = –10 V, RG = 2.5 W75 115
ns
Fall T imectf140 210
Source-Drain Diode Ratings and Characteristic (TC = 25C)
Pulsed Current ISM –150 A
Diode Forward V oltage aVSD IF = –50 A, VGS = 0 V –1.2 –1.5 V
Source-Drain Reverse Recovery T ime trr IF = –50 A, di/dt = 100 A/ms 40 80 ns
Notes
a. Pulse test; pulse width v300 ms, duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
SUD50P04-15
Vishay Siliconix
New Product
Document Number: 71176
S-00830—Rev. A, 24-Apr-00 www.vishay.com FaxBack 408-970-5600
3
0
20
40
60
80
0 20406080100
0
2000
4000
6000
8000
0 5 10 15 20 25 30
Output Characteristics T ransfer Characteristics
Capacitance Gate Charge
Transconductance On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)I D
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)I D
– Gate-to-Source Voltage (V) – On-Resistance (
Qg – Total Gate Charge (nC)
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
rDS(on) Ω)VGS
– T ransconductance (S)g fs
0
50
100
150
200
250
0246810
0
4
8
12
16
20
0 40 80 120 160
0
0.01
0.02
0.03
0.04
0 20406080100120
0
20
40
60
80
100
0123456
25C
125C
5 V
TC = –55C
VDS = 20 V
ID = 50 A
VGS = 10, 9, 8 V 6 V
VGS = 10 V
VGS = 4.5 V
TC = –55C25C
125C
2, 3 V
Coss
Ciss
ID – Drain Current (A)
4 V
7 V
Crss
SUD50P04-15
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
4 Document Number: 71176
S-00830—Rev. A, 24-Apr-00
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
(Normalized)
– On-Resistance (
TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V)
rDS(on) Ω)
– Source Current (A)I S
0
0.5
1.0
1.5
2.0
2.5
–50 –25 0 25 50 75 100 125 150 175
100
10
10.3 0.6 0.9 1.2 1.5
VGS = 10 V
ID = 30 A
TJ = 25C
TJ = 150C
0
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
Safe Operating Area
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)ID
500
10
0.1 0.1 1 10 100
Limited
by rDS(on)
1
100
TC = 25C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
Square W ave Pulse Duration (sec)
2
1
0.1
0.01 10–4 10–3 10–2 10–1 110
Normalized Effective T ransient
Thermal Impedance
Maximum Drain Current vs.
Case Temperature
TC – Case Temperature (C)
– Drain Current (A)ID
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
1 ms
10 ms
100 ms
dc
10 ms
30
100 ms
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 40C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1t2
Notes:
4. Surface Mounted
PDM
0.02
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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