S EM !C ON DUC TOR, I N C 30 TGF4230-EEU 1.2mm Discrete HFET @ 1200 um X 0.5 pm HFET @ Nominal Pout of 28.5-dBm at 8.5-GHz @ Nominal Gain of 10.0-dB at 8.5-GHz @ Nominal PAE of 55% at 8.5-GHz @ Suitable for High-Reliability Applications @ 0,572 x 0,699 x 0,102 mm (0.023 x 0.028 x 0.004 in.) PHOTO ENLARGEMENT DESCRIPTION The Triquint TGF4230 -EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond- pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire- bonding processes. The TGF4230-EEU is readily assembled using automatic equipment. TriQuint Semiconductor, Inc. e Texas Facilities (972) 995-8465 www.triquint.comEXAMPLE OF DC I-V CURVES OUTPUT POWER VS. INPUT POWER POWER ADDED EFFICIENCY VS. INPUT POWER TGF4230-EEU 0.3 Ve= 0.0 to -2.25 V (0.25 V steps) 0.25 Th= 25T = 02 w c 2 5 015 & 5 0.1 0.05 0 4 5 6 10 Drain Voltage (V) F = 8.5GHz V_ =8.0V |g =5OmA* Ta=25T co ZS 5 = 3 a ~ > a > 12 14 16 22 Input Power (dBm) Note: |g is defined as the drain current before application of RF signal at the input. F = 8.5GHz V_ =8.0V |g =5OmA* T,=25T PAE (%) 12 14 16 Input Power (dBm) 22 TriQuint Semiconductor, Inc. e Texas Facilities * (972) 995-8465 www.triquint.comGAIN VS. INPUT POWER DRAIN CURRENT VS. INPUT POWER ABSOLUTE MAXIMUM RATINGS TGF4230-EEU F =8.5GHz V, =8.0V |g =5OmA* T,=25T ao ZS c 3 OS 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) 180 F =8.5GHz V, =8.0V 160 I Q =50mA* Ty, =25T <= 140 120 2 3 100 iS Q 80 60 40 4 6 8 10 2 14 16 18 20 22 Input Power (dBm) Drain-to- source Voltage, Vog oo. rn I nn EE I EE IEE IE IEE En nn a ea nea eed ee sae asaeesaesaeesaeeas 12V Gate-to- Source Voltage, og ...eceeeeeeeeneee renee erent etree eee nner e naire ener ee en ae eeaa eee eaaa ee enaaeeesaaeeeeaaaeeenaaeeens -5VtoOV Mounting temperature (30 SOC), Ty .eseceeeeeeeeeee ee eter enter ener renee ee ee are renee eee eea eee eee enna eeesaaeeesaaeeeeeaaeeesaaeeees 320 C Storage temperature range, Topg -ceeceeecee teeta es Gente sae eaa essa essa eesaeenaee -65 to 200 C Dn EE I EI EI EE IEE EE IEE EE ee nea ease edaee saan (see thermal data on next page) Power dissipation, Pp Operating channel temperature, Toy, (see thermal data on next page) Ratings over base-plate temperature range Typ (unless otherwise noted) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated RF and DC Characteristics is not implied. Exposure to absolute maximum rated conditions for extended periods of time may affect device reliability. TriQuint Semiconductor, Inc. e Texas Facilities e (972) 995-8465 www.triquint.comTGF4230-EEU PREDICTED CHANNEL 300 TEMPERATURE VS. BASE TEMPERATURE S 250 at 0.51 W and 1.02 W 200 dissipated power 2 150 8 = 100 2x 3 50 c c 0 aor em 0.51 W (HET metal) 60 HEET tal -100 (l metal) -100 60 0 50 100 150 200 Base Temperature ( C) Case 1: Base temperature at backside of carrier (with 38 m AuSn solder attach to 0.5 mm CuMo Carrier). Case 2: Base temperature at backside of 1.2 mm HFET . HFET CHANNEL 325 TEMPERATURE VS. 300 MEDIAN LIFE 275 250 225 200 175 Channel Temperature ( C) 150 125 100 1 2 3 4 5 6 7 8 9 10 11415 years Median Life (10X Hours) @) TriQuint Semiconductor, Inc. e Texas Facilities (972) 995-8465 www.triquint.comRF AND DC CHARACTERISTICS LINEAR MODEL TGF4230-EEU PARAMETER MIN NOMINAL MAX UNIT Pout Output Power 27.5 28.5 - dBm Gp Power Gain 8 10 - dB PAE Power Added Efficiency 50 55 - % l oss Drain Saturation Current 204 204 334 mA Gu Transconductance 144 198 252 mS Vp Pinch Off Voltage -2.7 -1.85 -1 Vv BV gs Breakdown Voltage Gate-Source -30 -22 -17 Vv BV ep Breakdown Voltage Gate-Drain -30 -22 -17 Vv Pout, Gain, and PAE: Measured at 8.5 GHz, drain voltage of 8.0 V. Gate voltage is adjusted to achieve quiescent current of approximately 20% Ipgs with no RF signal applied. The source is grounded. Input power between 18 and 19-dBm. Ipss:_ Saturated drain-source current. Search for the maximum Ips at Veg = 0.0 V, and Vps swept between 0.5 V to 3.5 V. Note that the drain voltage at which | pss is located and recorded as Vpgp. Gy: Transconductance. (Ipss - |ps1)/ |Vg1l. Ips, measured at Vg, = -0.25 V using the knee search technique; Vpg swept between 0.5 V and Vpgp to search for maximum I pg1. Vp: Pinch off voltage. Ves for |p, = 0.5 mA/mm of gate width. Vp. fixed at 2.0 V, Veg swept to bring Ips to 0.5 mA/mm. Sweep will stop if Vp current not found beyond 0.5 V of the minimum V pspecification. BV,s: Breakdown voltage, gate to souwe. |p = 1.0 mA/mm of gate width. Source fixed at ground, drain not connected (floating). When 1.0mA/mm drawn at gate, Vgg measured as B Vg. BVgp: Breakdown voltage, gate to drain. |,,= 1.0 mA/mm of gate width. Drain fixed at ground, source not connected (floating). When 1.0 mA/mm drawn at the gate, Vgp measured as B Vp. Cog | | i Roe A/S Le Re Vocs Rp Lo eJh1NYA A/S] R, Reg < = Cos R, R Ros Cos ? Vps = 8.0 V and 30% Ipss at T = 25C FET Elements Rpg = 204000 vcCs Parameters Lg = 0.0421 nH Rg = 0.4 M = 132.9 mS Rg = 0.43 Lg = 0.015 nH A=0 Res = 81700 Rpg = 98.01 Ri = 119 R,= 1.21 Cpg = 0.25325 pF R2 = 119 Ces = 1.241 pF Rp = 0.66 F=0 Cog = 0.1004 pF Lp = 0.022 nH T = 5.49 pS TriQuint Semiconductor, Ine. e Texas Facilities e (972) 995-8465 www.triquint.comMODELED S-PARAMETERS TGF4230-EEU Frequency Su Sa Sx Sy (GHz) MAG ANG() MAG ANG() MAG ANG() MAG ANG) 0.5 0.985 -29.88 8.095 161.49 0.021 12.66 0.343 -22.22 1.0 0.959 -56.20 1.297 145.18 0.038 58.80 0.328 A175 15 0.931 TT AT 6.368 131.86 0.050 47.65 0.312 -57.46 2.0 0.908 -94.02 5.512 121.22 0.057 39.12 0.301 69.57 2.5 0.891 -106.82 4.791 112.62 0.062 32.60 0.295 -18.80 3.0 0.880 -116.82 4.202 105.49 0.065 27.55 0.294 -85.89 3.5 0.871 -124.76 3.723 99.42 0.067 23.56 0.297 91.41 4.0 0.865 -131.19 3.330 94.11 0.068 20.34 0.302 -95.80 4.5 0.861 -136.48 3.004 89.37 0.069 17.70 0.309 -99.38 5.0 0.858 -140.92 2.132 85.06 0.069 15.51 0.319 -102.37 5.5 0.856 -144.69 2.501 81.09 0.069 13.67 0.329 -104.94 6.0 0.855 -147.94 2.304 17.39 0.068 12.12 0.340 -107.18 6.5 0.854 -150.78 2.133 73.90 0.068 10.82 0.352 -109.19 7.0 0.854 -153.29 1.984 10.59 0.067 9.72 0.364 -111.03 7.5 0.854 -155.53 1.852 67.43 0.066 8.80 0.377 -112.73 8.0 0.855 -157.54 1.736 64.40 0.065 8.05 0.390 -114.32 8.5 0.855 -159.37 1.632 61.49 0.065 745 0.404 -115.84 9.0 0.856 -161.04 1.539 58.67 0.064 7.00 0.417 -117.29 9.5 0.857 -162.58 1.455 55.95 0.063 6.68 0.430 -118.68 10.0 0.858 -164.01 1.378 53.30 0.061 6.49 0.444 -120.03 10.5 0.859 -165.34 1.308 50.73 0.060 6.43 0.457 -121.35 11.0 0.860 -166.58 1.244 48.23 0.059 6.51 0.470 -122.63 11.5 0.862 -167.76 1.186 45.79 0.058 6.71 0.483 -123.89 12.0 0.863 -168.87 1.131 43.41 0.057 7.05 0.496 -125.11 12.5 0.864 -169.93 1.081 41.09 0.056 1.52 0.509 -126.32 13.0 0.866 -170.94 1.034 38.83 0.055 8.12 0.521 -127.51 13.5 0.867 -171.91 0.991 36.62 0.053 8.86 0.534 -128.68 14.0 0.869 -172.84 0.950 34.46 0.052 9.74 0.546 -129.82 Vos = 8.0 V and 30% Ips at T = 25C TriQuint Semiconductor, Inc. e Texas Facilities * (972) 995-8465 www.triquint.comTGF4230-EEU MECHANICAL DRAWING 0.699 @1354 0.604 Fetes i O 0.350 a iS 0.0 l 0.0 0.097 0.264 0.4741 0.572 Units: Millimeters Bond pad 1 (gate): 0.072 x 0.075 Thickness: 0.102 Bond pad 2 (gate): 0.075 x 0.075* Chip size + 0.0508 Bond pad 3 (gate): 0.075 x 0.075* ( Bond pad 4 (drain): 0.083 x 0.077 Minimum connections to Bond Pads 1 and 4. Sources are connected to backside metalization. * Altemate gate pads used for paralleling TGF4230s or for multiple gate wires. ** Wafer unique Row/Column data is recorded in brackets. NOTES Gate bias supplies should be designed to sink or source gate current. The magnitude and direction of the gate current is a function of bias point, load impedance, and drive level. TriQuint Semiconductor, Inc. e Texas Facilities (972) 995-8465 www.triquint.com