ZXMN7A11G
Document number: DS33562 Rev. 2 - 2
1 of 8
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March 2015
© Diodes Incorporated
ZXMN7A11G
NEW PROD UCT
70V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(on) max
70V
0.13Ω @ VGS = 10V
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low
voltage power management applications.
Applications
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Class D Audio Output Stages
Features and Benefits
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Ordering Information (Note 4)
Part Number
Qualification
Case
Packaging
ZXMN7A11GTA
Standard
SOT223
1,000 / Tape & Reel
ZXMN7A11GTC
Standard
SOT223
4,000 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
SOT223
D
S
G
Equivalent Circuit
Pin Out - Top View
Green
YWW
ZXMN
7A11
ZXMN 7A11 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
SOT223
ZXMN7A11G
Document number: DS33562 Rev. 2 - 2
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March 2015
© Diodes Incorporated
ZXMN7A11G
NEW PROD UCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
70
V
Gate-Source Voltage
VG
20
V
Continuous Drain Current, VGS = 10V,
TA = +25°C (Note 6)
TA = +70°C (Note 6)
TA = +25°C (Note 5)
ID
3.8
3.0
2.7
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
5
A
Pulsed Drain Current
IDM
10
A
Pulsed Source Current (Body Diode)
ISM
10
A
Thermal Resistance (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation at TA = +25°C (Note 5)
Linear Derating Factor (Note 5)
PD
2.0
W
mW/°C
16
Total Power Dissipation at TA = +25°C (Note 6)
Linear Derating Factor (Note 6)
PD
3.9
31
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 5)
RJA
62.5
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
RJA
32
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t 5 sec.
7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
ZXMN7A11G
Document number: DS33562 Rev. 2 - 2
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ZXMN7A11G
NEW PROD UCT
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
ZXMN7A11G
Document number: DS33562 Rev. 2 - 2
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ZXMN7A11G
NEW PROD UCT
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
70
—
—
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
—
—
1
µA
VDS = 70V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
1.0
—
—
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance (Note 8)
RDS (ON)
—
—
0.13
Ω
VGS = 10V, ID = 4.4A
—
—
0.19
VGS = 4.5V, ID = 3.8A
Forward Transfer Admittance
gfs
—
4.66
—
S
VDS = 15V, ID = 4.4A
Diode Forward Voltage (Note 8)
VSD
—
0.85
0.95
V
TJ = +25°C , VGS = 0V, IS = 2.5A
DYNAMIC CHARACTERISTICS (Notes 9 &10)
Input Capacitance
Ciss
—
298
—
pF
VDS = 50V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
—
35
—
Reverse Transfer Capacitance
Crss
—
21
—
Total Gate Charge
Qg
—
4.35
—
nC
VDS = 35V, VGS = 5.0V, ID = 4.4A
Total Gate Charge
Qg
—
7.4
—
nC
VDS = 35V, VGS = 10V, ID = 4.4A
Gate-Source Charge
Qgs
—
1.06
—
Gate-Drain Charge
Qgd
—
1.8
—
Turn-On Delay Time
tD(on)
—
1.9
—
ns
VDS = 35V, VGS = 10V,
ID = 1 ARG 6.0Ω
Turn-On Rise Time
tr
—
2
—
Turn-Off Delay Time
tD(off)
—
11.5
—
Turn-Off Fall Time
tf
—
5.8
—
Body Diode Reverse Recovery Time
trr
—
19.8
ns
TJ = +25°C, IS = 2.5A,
dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
—
14

nC
Notes: 8. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
9 .Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXMN7A11G
Document number: DS33562 Rev. 2 - 2
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ZXMN7A11G
NEW PROD UCT
Typical Characteristics
ZXMN7A11G
Document number: DS33562 Rev. 2 - 2
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© Diodes Incorporated
ZXMN7A11G
NEW PROD UCT
Typical Characteristics
ZXMN7A11G
Document number: DS33562 Rev. 2 - 2
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March 2015
© Diodes Incorporated
ZXMN7A11G
NEW PROD UCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
A1
A
7°
7°
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
X1
Y1
Y
XC
C1 Y2
ZXMN7A11G
Document number: DS33562 Rev. 2 - 2
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© Diodes Incorporated
ZXMN7A11G
NEW PROD UCT
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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