BSC030N03MS G OptiMOSTM3 M-Series Power-MOSFET Product Summary Features V DS * Optimized for 5V driver application (Notebook, VGA, POL) R DS(on),max * Low FOMSW for High Frequency SMPS 30 V V GS=10 V 3 m V GS=4.5 V 3.8 ID * 100% avalanche tested 100 A PG-TDSON-8 * N-channel * Very low on-resistance RDS(on) @ VGS=4.5V * Excellent gate charge x RDS(on) product (FOM) * Qualified according to JEDEC1) for target applications * Superior thermal resistance * Pb-free plating; RoHS compliant * Halogen-free according to IEC61249-2-21 Type Package Marking BSC030N03MS G PG-TDSON-8 030N03MS Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 C 100 V GS=10 V, T C=100 C 77 V GS=4.5 V, T C=25 C 100 V GS=4.5 V, T C=100 C 69 V GS=4.5 V, T A=25 C, R thJA=50 K/W 2) 21 Unit A Pulsed drain current3) I D,pulse T C=25 C 400 Avalanche current, single pulse4) I AS T C=25 C 50 Avalanche energy, single pulse E AS I D=50 A, R GS=25 75 mJ Gate source voltage V GS 20 V 1) J-STD20 and JESD22 Rev. 1.16 page 1 2009-10-22 BSC030N03MS G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 C 69 T A=25 C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit C 55/150/56 Values Symbol Conditions Unit min. typ. max. bottom - - 1.8 top - - 18 6 cm2 cooling area2) - - 50 Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=250 A 1 - 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 C - 10 100 V A Gate-source leakage current I GSS V GS=16 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 3.0 3.8 m V GS=10 V, I D=30 A - 2.5 3.0 0.7 1.5 2.6 48 97 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 1.16 page 2 2009-10-22 BSC030N03MS G Parameter Values Symbol Conditions Unit min. typ. max. - 4300 5700 - 1200 1600 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 88 - Turn-on delay time t d(on) - 19 - Rise time tr - 10 - Turn-off delay time t d(off) - 23 - Fall time tf - 9.4 - Gate to source charge Q gs - 12 16 Gate charge at threshold Q g(th) - 6.8 9.1 Gate to drain charge Q gd - 5.9 9.8 Switching charge Q sw - 11 16 Gate charge total Qg - 27 35 Gate plateau voltage V plateau - 2.8 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 55 73 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 23 31 Output charge Q oss V DD=15 V, V GS=0 V - 32 42 - - 63 - - 400 V DD=15 V, V GS=4.5 V, I D=30 A, R G=1.6 pF ns Gate Charge Characteristics5) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS A T C=25 C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 C - 0.83 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/s - - 20 nC 4) 5) See figure 13 for more detailed information See figure 16 for gate charge parameter definition Rev. 1.16 page 3 2009-10-22 BSC030N03MS G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C) parameter: V GS 120 80 100 60 I D [A] P tot [W] 80 40 10 V 4.5 V 60 40 20 20 0 0 0 40 80 120 0 160 40 80 T C [C] 120 160 T C [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 s 10 s 102 100 s 1 0.5 101 Z thJC [K/W] I D [A] DC 1 ms 0.2 0.1 10 ms 0.05 0.1 0.02 100 0.01 single pulse 10-1 10-1 0.01 100 101 102 0 0 0 0 0 1 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.16 0 10-6 page 4 2009-10-22 BSC030N03MS G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 300 8 5V 4.5 V 250 10 V 4V 6 R DS(on) [m ] I D [A] 200 150 3.5 V 3V 3.2 V 3.5 V 4 4V 4.5 V 5V 6V 100 3.2 V 10 V 2 3V 50 2.8 V 0 0 0 1 2 3 0 10 20 V DS [V] 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C parameter: T j 200 240 200 160 160 I D [A] g fs [S] 120 120 80 80 40 150 C 40 25 C 0 0 0 1 2 3 4 5 Rev. 1.16 0 40 80 120 160 I D [A] V GS [V] page 5 2009-10-22 BSC030N03MS G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 A 5 2.5 4 2 R DS(on) [m ] 98 % 3 1.5 V GS(th) [V] typ 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 10000 25 C 150 C, 98% Ciss Coss 100 1000 102 100 101 10 0 Crss 25 C, 98% 10 1 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 V SD [V] V DS [V] Rev. 1.16 150 C I F [A] C [pF] 10 3 page 6 2009-10-22 BSC030N03MS G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 10 25 C 6V 24 V 100 C 10 V GS [V] I AV [A] 8 125 C 6 4 2 1 0 1 10 100 1000 0 10 20 30 40 50 60 Q gate [nC] t AV [s] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 V BR(DSS) [V] 30 28 26 V g s(th) 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [C] Rev. 1.16 page 7 2009-10-22 BSC030N03MS G Package Outline PG-TDSON-8 PG-TDSON-8: Outline Footprint Dimensions in mm Rev. 1.16 page 8 2009-10-22 BSC030N03MS G Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.16 page 9 2009-10-22 BSC030N03MS G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. 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