2N6520TA - FAIRCHILD SEMICONDUCTOR

2N6520 — PNP Epitaxial Silicon Transistor

2N6520 Rev. B1 1

June 2009

2N6520

PNP Epitaxial Silicon Transistor

Features

• High Voltage Transistor

• Collector-Emitter Voltage: VCBO= -350V

• Collector Dissipation: PC (max)=625mW

• Complement to 2N6517

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Unit

VCBO Collector-Base Voltage -350 V

VCEO Collector-Emitter Voltage -350 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current -500 mA

IB Base Current -250 mA

PC Collector Power Dissipation 0.625 W

Derate above 25°C5mW/°C

TJ Junction Temperature 150 °C

TSTG Storage Temperature -55 to +150 °C

1. Emitter 2. Base 3. Collector

TO-92

2N6520 — PNP Epitaxial Silicon Transistor

2N6520 Rev. B1 2

Electrical Characteristics TA=25°C unless otherwise noted

* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

Symbol Parameter Test Conditions Min. Max. Units

BVCBO Collector-Base Breakdown Voltage IC= -100μA, IE=0 -350 V

BVCEO * Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -350 V

BVEBO Emitter-Base Breakdown Voltage IE= -10μA, IC=0 -5 V

ICBO Collector Cut-off Current VCB= -250V, IE=0 -50 nA

IEBO Emitter Cut-off Current VEB= -4V, IC=0 -50 nA

hFE * DC Current Gain VCE= -10V, IC= -1mA

VCE= -10V, IC= -10mA

VCE= -10V, IC= -30mA

VCE= -10V, IC= -50mA

VCE= -10V, IC= -100mA

200

VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA

IC= -20mA, IB= -2mA

IC= -30mA, IB= -3mA

IC= -50mA, IB= -5mA

-0.30

-0.35

-0.50

-1

VBE (sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA

IC= -20mA, IB= -2mA

IC= -30mA, IB= -3mA

-0.75

-0.85

-0.90

VBE (on) Base-Emitter On Voltage VCE= -10V, IC= -100mA -2 V

fT* Current Gain Bandwidth Product VCE= -20V, IC= -10mA, f=20MHz 40 200 MHz

Cob Output Capacitance VCB= -20V, IE=0, f=1MHz 6 pF

CEB Emitter-Base Capacitance VEB= -0.5V, IC=0, f=1MHz 100 pF

tON Turn On Time VBE (off)= -2V, VCC= -100V

IC= -50mA, IB1= -10mA

200 ns

tOFF Turn Off Time VCC= -100V, IC= -50mA

IB1=IB2= -10mA

3.5 ns

2N6520 — PNP Epitaxial Silicon Transistor

2N6520 Rev. B1 3

Typical Performance Characteristics

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 3. Turn-On Time Figure 4. Turn-Off Time

Figure 5. Temperature Coefficients Figure 6. Capacitance

-1 -10 -100 -1000 -10000

100

1000

VCE = -20V

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

-1 -10 -100 -1000 -10000

-10

-100

-1000

-10000

IC = 10 IBVCE(sat)

VBE(sat)

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

IC[mA], COLLECTOR CURRENT

-1 -10 -100

100

1000

IC/IB= 5

TJ=25oC

VCE(off) = -100V

tD @ VBE(off)=-2.0V

t[ns] ,TIME

IC[mA], COLLECTOR CURRENT

-1 -10 -100

100

1000

IC/IB= 5

IB1 = IB2

TJ=25oC

VCE(off) = -100V

tSTG

t[ns] ,TIME

IC[mA], COLLECTOR CURRENT

-1 -10 -100

-2.5

-2.0

-1.5

-1.0

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-55oC to 25oC

-55oC to 125oC

RθVB for VBE

RθVC for VCE(sat)

IC/IB = 10

R[mV/oC], THERMAL COEFFICIENTS

IC[mA], COLLECTOR CURRENT

-0.1 -1 -10 -100

100

Cob

Cib

f=1MHz

Cib[pF], Cob[pF], CAPACITANCE

VCB[V], COLLECTOR-BASE VOLTAGE

2N6520 — PNP Epitaxial Silicon Transistor

2N6520 Rev. B1 4

Typical Performance Characteristics (Continued)

Figure 7. Current Gain Bandwidth Product

-1 -10 -100

100

1000

VCE = -20V

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

IC[mA], COLLECTOR CURRENT

2N6520 — PNP Epitaxial Silicon Transistor

2N6520 Rev. B1 5

Physical Dimensions

0.46 ±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27 ±0.20]1.27TYP

[1.27 ±0.20]

3.60 ±0.20

14.47 ±0.40

.02 ±0.10

(0.25) 4.58 ±0.20

4.58 +0.25

–0.15

0.38 +0.1

–0.0

0.38 +0.10

–0.05

TO-92

Dimensions in Millimeters

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The datasheet is for reference information only. Rev. I40