VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 75 A FEATURES * Trench IGBT technology * FRED Pt(R) clamping diodes * PressFit pins technology * Exposed Al2O3 substrate with low thermal resistance * Short circuit rated * Square RBSOA * Integrated thermistor * Low internal inductances EMIPAK 2B (package example) * Low switching loss * PressFit pins locking technology. Patent # US.263.820 B2 PRIMARY CHARACTERISTICS * UL approved file E78996 Q1 - Q4 IGBT STAGE 600 V VCES VCE(on) typical at IC = 75 A 1.7 V IC at TC = 89 C 75 A Q2 - Q3 IGBT STAGE 600 V VCES VCE(on) typical at IC = 75 A 1.56 V 75 A IC at TC = 122 C Speed 8 kHz to 30 kHz Package EMIPAK 2B Circuit configuration 3-levels half bridge inverter stage * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION VS-ETF075Y60U is an integrated solution for a multi level inverter stage in a single package. The EMIPAK2B package is easy to use thanks to the PressFit pins and the exposed substrate provides improved thermal performance. The optimized layout also helps to minimize stray parameters, allowing for better EMI performance. ABSOLUTE MAXIMUM RATINGS PARAMETER Operating junction temperature Storage temperature range RMS isolation voltage Q1 - Q4 IGBT Collector to emitter voltage Gate to emitter voltage Pulsed collector current Clamped inductive load current TEST CONDITIONS TJ = 25 C, all terminals shorted, f = 50 Hz, t = 1 s IC Power dissipation PD TC = 25 C TC = 80 C TSINK = 80 C TC = 25 C TC = 80 C TC = 25 C TC = 80 C TSINK = 80 C TC = 25 C TC = 80 C 600 20 250 250 154 113 50 405 257 VCES VGES ICM ILM (1) Continuous collector current IC Power dissipation PD MAX. 175 -40 to +150 3500 600 20 200 200 109 80 40 294 186 VCES VGES ICM ILM (1) Continuous collector current Q2 - Q3 IGBT Collector to emitter voltage Gate to emitter voltage Pulsed collector current Clamped inductive load current SYMBOL TJ TStg VISOL UNITS C V V A A W V A A W PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and International patents. Revision: 06-Oct-17 Document Number: 94685 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER D5 - D6 CLAMPING DIODE Repetitive peak reverse voltage Single pulse forward current SYMBOL VRRM IFSM Diode continuous forward current IF Power dissipation PD D1 - D2 - D3 - D4 AP DIODE Single pulse forward current IFSM Diode continuous forward current IF Power dissipation PD TEST CONDITIONS MAX. UNITS 600 270 78 55 28 174 110 V 10 ms sine or 6 ms rectangular pulse, TJ = 25 C TC = 25 C TC = 80 C TSINK = 80 C TC = 25 C TC = 80 C 10 ms sine or 6 ms rectangular pulse, TJ = 25 C TC = 25 C TC = 80 C TSINK = 80 C TC = 25 C TC = 80 C 250 72 70 31 107 68 A W A W Notes * Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur (1) V CC = 300 V, VGE = 15 V, L = 500 H, Rg = 4.7 , TJ = 175 C ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS V Q1 - Q4 IGBT Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage BVCES VCE(on) VGE(th) VGE(th)/TJ VGE = 0 V, IC = 100 A 600 - - VGE = 15 V, IC = 60 A - 1.57 1.8 VGE = 15 V, IC = 75 A - 1.7 1.93 VGE = 15 V, IC = 60 A, TJ = 125 C - 1.7 - VGE = 15 V, IC = 75 A, TJ = 125 C - 1.86 - 3.6 5.6 7.1 - -12 - mV/C VCE = VGE, IC = 2.1 mA VCE = VGE, IC = 1 mA (25 C to 125 C) V Forward transconductance gfe VCE = 20 V, IC = 75 A - 51 - S Transfer characteristics VGE VCE = 20 V, IC = 75 A - 9.6 - V Zero gate voltage collector current ICES VGE = 0 V, VCE = 600 V - 0.0002 0.1 VGE = 0 V, VCE = 600 V, TJ = 125 C - 0.01 - Gate to emitter leakage current IGES VGE = 20 V, VCE = 0 V - - 200 nA BVCES VGE = 0 V, IC = 500 A 600 - - V - 1.45 1.62 mA Q2 - Q3 IGBT Collector to emitter breakdown voltage VGE = 15 V, IC = 60 A Collector to emitter voltage VCE(on) Gate threshold voltage VGE(th) VGE = 15 V, IC = 75 A - 1.56 1.73 VGE = 15 V, IC = 60 A, TJ = 125 C - 1.52 - VGE = 15 V, IC = 75 A, TJ = 125 C Temperature coefficient of threshold voltage VGE(th)/TJ VCE = VGE, IC = 5.6 mA VCE = VGE, IC = 1.4 mA (25 C to 125 C) V - 1.67 - 3.6 5.3 7.1 - -18 - mV/C Forward transconductance gfe VCE = 20 V, IC = 75 A - 72 - S Transfer characteristics VGE VCE = 20 V, IC = 75 A - 8.3 - V VGE = 0 V, VCE = 600 V - 0.0005 0.1 VGE = 0 V, VCE = 600 V, TJ = 125 C - 0.065 - VGE = 20 V, VCE = 0 V - - 400 Zero gate voltage collector current ICES Gate to emitter leakage current IGES mA nA Revision: 06-Oct-17 Document Number: 94685 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS D5 - D6 CLAMPING DIODE Cathode to anode blocking voltage VBR Forward voltage drop VFM Reverse leakage current IRM IR = 100 A 600 - - IF = 40 A - 1.83 2.35 IF = 40 A, TJ = 125 C - 1.51 - VR = 600 V - 0.0002 0.1 VR = 600 V, TJ = 125 C - 0.028 - IF = 30 A - 1.2 1.41 IF = 30 A, TJ = 125 C - 1.06 - MIN. TYP. MAX. V mA D1 - D2 - D3 - D4 AP DIODE Forward voltage drop VFM V SWITCHING CHARACTERISTICS (TJ = 25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS UNITS Q1 - Q4 IGBT (WITH D5 - D6 CLAMPING DIODE) Total gate charge (turn-on) Qg IC = 75 A - 150 - Gate to emitter charge (turn-on) Qge VCC = 400 V - 40 - Gate to collector charge (turn-on) Qgc VGE = 15 V - 60 - Turn-on switching loss Eon - 0.94 - Turn-off switching loss Eoff - 1.1 - - 2.04 - - 78 - Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) IC = 75 A VCC = 300 V VGE = 15 V Rg = 4.7 L = 500 H (1) - 72 - - 101 - tf - 65 - Turn-on switching loss Eon - 1.13 - Turn-off switching loss Eoff - 1.61 - Total switching loss Etot - 2.74 - Turn-on delay time td(on) IC = 75 A VCC = 300 V VGE = 15 V Rg = 4.7 L = 500 H TJ = 125 C (1) - 78 - - 72 - - 106 - - 107 - VGE = 0 V VCC = 30 V f = 1 MHz - 4440 - 245 - 130 Rise time Turn-off delay time Fall time tr td(off) tf Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Reverse bias safe operating area RBSOA TJ = 175 C, IC = 200 A,VCC = 300 V, VP = 600 V, Rg = 4.7 , VGE = 15 V to 0 V Short circuit safe operating area SCSOA Rg = 10 , VCC = 400 V, VP = 600 V VGE = 15 V to 0 nC mJ ns mJ ns pF Fullsquare - - 5 s Q2 - Q3 IGBT (WITH FREEWHEELING EXTERNAL TO-247 DIODE DISCRETE 30ETH06) Total gate charge (turn-on) Qg IC = 120 A - 240 - Gate to emitter charge (turn-on) Qge VCC = 400 V - 69 - Gate to collector charge (turn-on) Qgc VGE = 15 V - 90 - Turn-on switching loss Eon - 0.85 - Turn-off switching loss Eoff IC = 75 A - 1.54 - Total switching loss Etot VCC = 300 V - 2.39 - Turn-on delay time td(on) VGE = 15 V Rg = 4.7 L = 500 H (1) - 111 - - 81 - - 130 - - 74 - Rise time Turn-off delay time Fall time tr td(off) tf nC mJ ns Revision: 06-Oct-17 Document Number: 94685 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 C unless otherwise noted) PARAMETER SYMBOL Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) TEST CONDITIONS MIN. TYP. MAX. - 1.0 - IC = 75 A VCC = 300 V VGE = 15 V Rg = 4.7 L = 500 H TJ = 125 C (1) - 1.83 - - 2.83 - - 111 - - 83 - - 140 - - 104 - VGE = 0 V VCC = 30 V f = 1 MHz - 7750 - - 550 - - 225 - tf Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Reverse bias safe operating area RBSOA TJ = 175 C, IC = 250 A, VCC = 300 V, VP = 600 V, Rg = 4.7 , VGE = 15 V to 0 V Short circuit safe operating area SCSOA Rg = 10 , VCC = 400 V, VP = 600 V VGE = 15 V to 0 UNITS mJ ns pF Fullsquare - - 5 s ns D5 - D6 CLAMPING DIODE Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr VR = 200 V IF = 50 A dl/dt = 500 A/s - 59 - - 8.5 - A - 257 - nC VR = 200 V IF = 50 A dl/dt = 500 A/s, TJ = 125 C - 110 - ns - 18.5 - A - 1020 - nC VR = 200 V IF = 50 A dl/dt = 500 A/s - 108 - ns - 19.5 - A - 1062 - nC VR = 200 V IF = 50 A dl/dt = 500 A/s, TJ = 125 C - 174 - ns - 31 - A - 2716 - nC D1 - D2 - D3 - D4 AP DIODE Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Note (1) Energy losses include "tail" and diode reverse recovery INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS R25 TC = 25 C 5000 R100 TC = 100 C 493 5 % B25/50 R2 = R25 exp. [B25/50 (1/T2 - 1/(298.15 K))] 3375 5 % K 220 C Dissipation constant 2 mW/C Thermal time constant 8 s Resistance B-value Maximum operating temperature Revision: 06-Oct-17 Document Number: 94685 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. - - 0.51 - - 0.37 - - 0.86 D1 - D2 - D3 - D4 AP diode - junction to case thermal resistance (per diode) - - 1.4 Q1 - Q4 IGBT - case to sink thermal resistance (per switch) - 0.84 - Q1 - Q4 IGBT - junction to case thermal resistance (per switch) Q2 - Q3 IGBT - junction to case thermal resistance (per switch) RthJC D5 - D6 clamping diode - junction to case thermal resistance (per diode) Q2 - Q3 IGBT - case to sink thermal resistance (per switch) UNITS C/W - 0.8 - - 1.16 - D1 - D2 - D3 - D4 AP diode - case to sink thermal resistance (per diode) - 1.12 - Case to sink thermal resistance per module - 0.1 - C/W Mounting torque (M4) 2 - 3 Nm Weight - 45 - g RthCS (1) D5 - D6 clamping diode - case to sink thermal resistance (per diode) Note (1) Mounting surface flat, smooth, and greased 150 Allowable Case Temperature (C) 180 TJ = 25 C 135 120 105 TJ = 125 C TJ = 150 C TJ = 175 C IC (A) 90 75 60 45 30 15 0 0 0.5 1 1.5 2 2.5 3 160 140 120 DC 100 80 60 40 20 0 0 3.5 VCE (V) 20 40 60 80 100 120 IC - Continuous Collector Current (A) Fig. 1 - Typical Q1 - Q4 Trench IGBT Output Characteristics VGE = 15 V Fig. 3 - Maximum Q1 - Q4 Trench IGBT Continuous Collector Current vs. Case Temperature 150 80 135 70 VCE = 20 V 120 60 105 75 IC (A) IC (A) 50 VGE = 18 V VGE = 15 V VGE = 12 V 90 60 40 TJ = 125 C 30 45 TJ = 25 C 20 VGE = 9 V 30 10 15 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 5 6 7 8 9 10 11 12 VCE (V) VGE (V) Fig. 2 - Typical Q1 - Q4 Trench IGBT Output Characteristics TJ = 125 C Fig. 4 - Typical Q1 - Q4 Trench IGBT Transfer Characteristics Revision: 06-Oct-17 Document Number: 94685 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors 6.5 1000 6 Switching time (ns) TJ = 25 C 5.5 VGEth (V) 5 TJ = 125 C 4.5 4 tf tdoff 100 tdon 3.5 tr 3 10 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 10 20 30 40 50 60 70 80 IC (mA) IC (A) Fig. 5 - Typical Q1 - Q4 Trench IGBT Gate Threshold Voltage Fig. 8 - Typical Q1 - Q4 Trench IGBT Switching Loss vs. IC (with D5 - D6 Clamping Diode) TJ = 125 C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 H 10 2.4 1 TJ = 175 C 0.1 TJ = 150 C 2.2 Energy (mJ) ICES (mA) 2 TJ = 125 C 0.01 0.001 TJ = 25 C 1.8 Eoff 1.6 1.4 Eon 1.2 0.0001 1 0.8 0.00001 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 45 50 VCES (V) Rg () Fig. 6 - Typical Q1 - Q4 Trench IGBT Zero Gate Voltage Collector Current Fig. 9 - Typical Q1 - Q4 Trench IGBT Energy Loss vs. Rg (with D5 - D6 Clamping Diode) TJ = 125 C, VCC = 300 V, IC = 75 A, VGE = 15 V, L = 500 H 1000 2 1.8 tdon Switching time (ns) 1.6 Energy (mJ) 1.4 Eoff 1.2 1 0.8 Eon 0.6 0.4 tdoff 100 tf tr 0.2 0 10 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 50 IC (A) Rg () Fig. 7 - Typical Q1 - Q4 Trench IGBT Energy Loss vs. IC (with D5 - D6 Clamping Diode) TJ = 125 C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 H Fig. 10 - Typical Q1 - Q4 Trench IGBT Switching Time vs. Rg (with D5 - D6 Clamping Diode) TJ = 125 C, VCC = 300 V, IC = 75 A, VGE = 15 V, L = 500 H Revision: 06-Oct-17 Document Number: 94685 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors 150 170 135 150 TJ = 175 C 120 130 TJ = 150 C 105 125 C trr (ns) IF (A) 90 75 60 TJ = 25 C 45 TJ = 125 C 110 90 70 30 25 C 50 15 30 0 0 0.5 1 1.5 2 2.5 3 3.5 100 200 VFM (V) 400 500 dIFdt (A/s) Fig. 11 - Typical D5 - D6 Clamping Diode Forward Characteristics Fig. 14 - Typical D5 - D6 Clamping Diode Reverse Recovery Time vs. dIF/dt, Vrr = 200 V, IF = 50 A 180 22 160 20 125 C 18 140 16 120 14 IRR (A) Allowable Case Temperature (C) 300 100 80 12 10 25 C 8 60 6 40 4 20 2 0 0 0 10 20 30 40 50 60 70 80 100 90 200 300 400 500 IF - Continuous Forward Current (A) dIFdt (A/s) Fig. 12 - Maximum D5 - D6 Clamping Diode Forward Current vs. Case Temperature Fig. 15 - Typical D5 - D6 Clamping Diode Reverse Recovery Current vs. dIF/dt, Vrr = 200 V, IF = 50 A 10 1200 175 C 1 125 C 1000 150 C 125 C 0.01 800 Qrr (nC) IRRM (A) 0.1 600 400 0.001 25 C 0.00001 100 25 C 200 0.0001 0 200 300 400 500 600 100 200 300 400 500 VR (V) dIFdt (A/s) Fig. 13 - Typical D5 - D6 Clamping Diode Reverse Leakage Current Fig. 16 - Typical D5 - D6 Clamping Diode Reverse Recovery Charge vs. dIF/dt, Vrr = 200 V, IF = 50 A Revision: 06-Oct-17 Document Number: 94685 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (C/W) 10 1 0.1 0.5 0.2 0.1 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Q1 - Q4 Trench IGBT) ZthJC - Thermal Impedance Junction to Case (C/W) 10 1 0.1 0.5 0.2 0.1 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics (D5 - D6 Clamping Diode) 150 150 TJ = 25 C 135 135 120 105 IC (A) 90 IC (A) TJ = 125 C TJ = 150 C TJ = 175 C 75 120 VGE = 18 V VGE = 15 V 105 VGE = 12 V 90 VGE = 9 V 75 60 60 45 45 30 30 15 15 0 0 0 0.5 1 1.5 2 2.5 3 VCE (V) Fig. 19 - Typical Q2 - Q3 Trench IGBT Output Characteristics VGE = 15 V 0 0.5 1 1.5 2 2.5 3 VCE (V) Fig. 20 - Typical Q2 - Q3 Trench IGBT Output Characteristics TJ = 125 C Revision: 06-Oct-17 Document Number: 94685 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U Vishay Semiconductors 10 180 TJ = 175 C 160 1 TJ = 150 C 140 120 TJ = 125 C 0.1 DC 100 ICES (mA) Allowable Case Temperature (C) www.vishay.com 80 60 0.01 0.001 TJ = 25 C 40 0.0001 20 0.00001 100 0 0 20 40 60 80 100 120 140 160 200 300 400 500 600 IC - Continuous Collector Current (A) VCES (V) Fig. 21 - Maximum Q2 - Q3 Trench IGBT Continuous Collector Current vs. Case Temperature Fig. 24 - Typical Q2 - Q3 Trench IGBT Zero Gate Voltage Collector Current 2 80 VCE = 20 V 1.8 70 1.6 TJ = 125 C 1.4 50 Energy (mJ) ICE (A) 60 TJ = 25 C 40 30 Eoff 1.2 1 0.8 0.6 20 Eon 0.4 10 0.2 0 0 4 5 6 7 8 9 10 0 11 10 20 30 40 50 60 70 80 IC (A) VGE (V) Fig. 22 - Typical Q2 - Q3 Trench IGBT Transfer Characteristics Fig. 25 - Typical Q2 - Q3 Trench IGBT Energy Loss vs. IC (with Freewheeling External TO-247 Diode Discrete 30ETH06), TJ = 125 C, VCC = 300 V, Rg = 4.7 VGE = 15 V, L = 500 H 1000 6.5 6 TJ = 25 C tf Switching Time (ns) 5.5 VGEth (V) 5 4.5 4 3.5 TJ = 125 C 3 tdoff 100 tdon tr 2.5 10 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 10 20 30 40 50 60 70 80 IC (mA) IC (A) Fig. 23 - Typical Q2 - Q3 Trench IGBT Gate Threshold Voltage Fig. 26 - Typical Q2 - Q3 Trench IGBT Switching Time vs. IC (with Freewheeling External TO-247 Diode Discrete 30ETH06), TJ = 125 C, VCC = 300 V, Rg = 4.7 VGE= 15 V, L = 500 H Revision: 06-Oct-17 Document Number: 94685 9 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors Allowable Case Temperature (C) 2.8 2.6 2.4 Energy (mJ) 2.2 2 Eoff 1.8 1.6 1.4 1.2 Eon 1 0.8 0 5 10 15 20 25 30 35 40 45 180 160 140 DC 120 100 80 60 40 20 0 50 0 10 20 30 40 50 60 70 80 Rg () IF - Continuous Forward Current (A) Fig. 27 - Typical Q2 - Q3 Trench IGBT Energy Loss vs. Rg (with Freewheeling External TO-247 Diode Discrete 30ETH06), TJ = 125 C, VCC = 300 V, IC = 75 A, VGE = 15 V, L = 500 H Fig. 30 - Maximum D1 - D2 - D3 - D4 Antiparallel Diode Forward Current vs. Case Temperature 1000 250 230 210 tdoff 125 C 190 tr trr (ns) Switching Time (ns) tdon 100 tf 170 150 130 25 C 110 10 90 0 5 100 10 15 20 25 30 35 40 45 50 55 200 300 400 500 Rg () dIFdt (A/s) Fig. 28 - Typical Q2 - Q3 Trench IGBT Switching Time vs. Rg (with Freewheeling External TO-247 Diode Discrete 30ETH06), TJ = 125 C, VCC = 300 V, IC = 75 A, VGE = 15 V, L = 500 H Fig. 31 - Typical D1 - D2 - D3 - D4 Antiparallel Diode Reverse Recovery Time vs. dIF/dt Vrr = 200 V, IF = 50 A 150 35 135 30 125 C 120 25 105 75 Irr (A) IF (A) 90 TJ = 150 C TJ = 25 C TJ = 175 C 30 10 TJ = 125 C 5 15 0 0 0.4 0.8 25 C 15 60 45 20 1.2 1.6 2 2.4 0 100 200 300 400 500 VFM (V) dIF/dt (A/us) Fig. 29 - Typical D1 - D2 - D3 - D4 Antiparallel Diode Forward Characteristics Fig. 32 - Typical D1 - D2 - D3 - D4 Antiparallel Diode Reverse Recovery Current vs. dIF/dt Vrr = 200 V, IF = 50 A Revision: 06-Oct-17 Document Number: 94685 10 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors 3000 2700 125 C 2400 Qrr (nC) 2100 1800 1500 1200 25 C 900 600 300 100 200 300 400 500 dIFdt (A/s) Fig. 33 - Typical D1 - D2 - D3 - D4 Antiparallel Diode Reverse Recovery Charge vs. dIF/dt Vrr = 200 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (C/W) 10 1 0.1 0.5 0.2 0.1 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 34 - Maximum Thermal Impedance ZthJC Characteristics (Q2 - Q3 Trench IGBT) ZthJC - Thermal Impedance Junction to Case (C/W) 10 1 0.1 0.5 0.2 0.1 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 35 - Maximum Thermal Impedance ZthJC Characteristics (D1 - D2 - D3 - D4 Antiparallel Diode) Revision: 06-Oct-17 Document Number: 94685 11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ET F 075 Y 60 U 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Package indicator (ET = EMIPAK 2B) 3 - Circuit configuration (F = 3-levels half bridge inverter stage) 4 - Current rating (075 = 75 A) 5 - Switch die technology (Y = trench IGBT) 6 - Voltage rating (60 = 600 V) 7 - Diode die technology (U = ultrafast diode) CIRCUIT CONFIGURATION 1 1 1 1 1 Q1 D1 5 D5 6 Q2 D2 2 2 2 2 2 2 2 7 8 Q3 D3 9 4 4 4 4 4 4 D6 10 Q4 D4 11 12 3 3 3 3 3 13 Ntc 14 Revision: 06-Oct-17 Document Number: 94685 12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors PACKAGE 24 24 20.8 20.8 17.6 14.4 14.4 11.2 8 8 4.8 4.8 1.6 1.6 9.6 16 12.8 9 10 2 2 2 2 2 2 2 7 2 8 13 6 14 9.6 3.2 12.8 16 5 4 12 11 3 3 3 3 3 4 4 1 4 4 1 1 1 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95559 Revision: 06-Oct-17 Document Number: 94685 13 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit 3 0.15 12 0.35 4.3 0.3 DIMENSIONS in millimeters 56.8 0.3 52.7 0.5 51 0.15 20.4 O 16.6 4.4 0 16 16 12.8 9.6 9.6 12.8 6.4 3.2 6.4 37 0.5 42.5 0.15 53 0.15 62.8 0.3 3.2 .1 1.6 Pin position 4.8 0.4 1.6 4.8 8 11.2 14.4 17.6 20.8 24 Revision: 25-Jun-14 8 11.2 14.4 17.6 20.8 24 Document Number: 95559 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-ETF075Y60U