VS-ETF075Y60U
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Revision: 06-Oct-17 1Document Number: 94685
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EMIPAK 2B PressFit Power Module
3-Levels Half Bridge Inverter Stage, 75 A
FEATURES
• Trench IGBT technology
•FRED Pt
® clamping diodes
• PressFit pins technology
•Exposed Al
2O3 substrate with low thermal resistance
• Short circuit rated
• Square RBSOA
• Integrated thermistor
• Low internal inductances
• Low switching loss
• PressFit pins locking technology. Patent # US.263.820 B2
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-ETF075Y60U is an integrated solution for a multi level
inverter stage in a single package. The EMIPAK2B package
is easy to use thanks to the PressFit pins and the exposed
substrate provides improved thermal performance. The
optimized layout also helps to minimize stray parameters,
allowing for better EMI performance.
PRIMARY CHARACTERISTICS
Q1 - Q4 IGBT STAGE
VCES 600 V
VCE(on) typical at IC = 75 A 1.7 V
IC at TC = 89 °C 75 A
Q2 - Q3 IGBT STAGE
VCES 600 V
VCE(on) typical at IC = 75 A 1.56 V
IC at TC = 122 °C 75 A
Speed 8 kHz to 30 kHz
Package EMIPAK 2B
Circuit configuration 3-levels half bridge inverter stage
EMIPAK 2B
(package example)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Operating junction temperature TJ175 °C
Storage temperature range TStg -40 to +150
RMS isolation voltage VISOL TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s 3500 V
Q1 - Q4 IGBT
Collector to emitter voltage VCES 600 V
Gate to emitter voltage VGES 20
Pulsed collector current ICM 200 A
Clamped inductive load current ILM (1) 200
Continuous collector current IC
TC = 25 °C 109
ATC = 80 °C 80
TSINK = 80 °C 40
Power dissipation PD
TC = 25 °C 294 W
TC = 80 °C 186
Q2 - Q3 IGBT
Collector to emitter voltage VCES 600 V
Gate to emitter voltage VGES 20
Pulsed collector current ICM 250 A
Clamped inductive load current ILM (1) 250
Continuous collector current IC
TC = 25 °C 154
ATC = 80 °C 113
TSINK = 80 °C 50
Power dissipation PD
TC = 25 °C 405 W
TC = 80 °C 257
PATENT(S): www.vishay.com/patents
This Vishay product is protected by one or more United States and International patents.
VS-ETF075Y60U
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Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur
(1) VCC = 300 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 175 °C
D5 - D6 CLAMPING DIODE
Repetitive peak reverse voltage VRRM 600 V
Single pulse forward current IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 270
A
Diode continuous forward current IF
TC = 25 °C 78
TC = 80 °C 55
TSINK = 80 °C 28
Power dissipation PD
TC = 25 °C 174 W
TC = 80 °C 110
D1 - D2 - D3 - D4 AP DIODE
Single pulse forward current IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 250
A
Diode continuous forward current IF
TC = 25 °C 72
TC = 80 °C 70
TSINK = 80 °C 31
Power dissipation PD
TC = 25 °C 107 W
TC = 80 °C 68
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q4 IGBT
Collector to emitter breakdown voltage BVCES VGE = 0 V, IC = 100 μA 600 - - V
Collector to emitter voltage VCE(on)
VGE = 15 V, IC = 60 A - 1.57 1.8
V
VGE = 15 V, IC = 75 A - 1.7 1.93
VGE = 15 V, IC = 60 A, TJ = 125 °C - 1.7 -
VGE = 15 V, IC = 75 A, TJ = 125 °C - 1.86 -
Gate threshold voltage VGE(th) VCE = VGE, IC = 2.1 mA 3.6 5.6 7.1
Temperature coefficient of threshold
voltage VGE(th)/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - -12 - mV/°C
Forward transconductance gfe VCE = 20 V, IC = 75 A - 51 - S
Transfer characteristics VGE VCE = 20 V, IC = 75 A - 9.6 - V
Zero gate voltage collector current ICES
VGE = 0 V, VCE = 600 V - 0.0002 0.1 mA
VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.01 -
Gate to emitter leakage current IGES VGE = ± 20 V, VCE = 0 V - - ± 200 nA
Q2 - Q3 IGBT
Collector to emitter breakdown voltage BVCES VGE = 0 V, IC = 500 μA 600 - - V
Collector to emitter voltage VCE(on)
VGE = 15 V, IC = 60 A - 1.45 1.62
V
VGE = 15 V, IC = 75 A - 1.56 1.73
VGE = 15 V, IC = 60 A, TJ = 125 °C - 1.52 -
VGE = 15 V, IC = 75 A, TJ = 125 °C - 1.67 -
Gate threshold voltage VGE(th) VCE = VGE, IC = 5.6 mA 3.6 5.3 7.1
Temperature coefficient of threshold
voltage VGE(th)/TJVCE = VGE, IC = 1.4 mA (25 °C to 125 °C) - -18 - mV/°C
Forward transconductance gfe VCE = 20 V, IC = 75 A - 72 - S
Transfer characteristics VGE VCE = 20 V, IC = 75 A - 8.3 - V
Zero gate voltage collector current ICES
VGE = 0 V, VCE = 600 V - 0.0005 0.1 mA
VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.065 -
Gate to emitter leakage current IGES VGE = ± 20 V, VCE = 0 V - - ± 400 nA
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
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D5 - D6 CLAMPING DIODE
Cathode to anode blocking voltage VBR IR = 100 μA 600 - -
V
Forward voltage drop VFM
IF = 40 A - 1.83 2.35
IF = 40 A, TJ = 125 °C - 1.51 -
Reverse leakage current IRM
VR = 600 V - 0.0002 0.1 mA
VR = 600 V, TJ = 125 °C - 0.028 -
D1 - D2 - D3 - D4 AP DIODE
Forward voltage drop VFM
IF = 30 A - 1.2 1.41 V
IF = 30 A, TJ = 125 °C - 1.06 -
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q4 IGBT (WITH D5 - D6 CLAMPING DIODE)
Total gate charge (turn-on) QgIC = 75 A
VCC = 400 V
VGE = 15 V
-150-
nCGate to emitter charge (turn-on) Qge -40-
Gate to collector charge (turn-on) Qgc -60-
Turn-on switching loss Eon
IC = 75 A
VCC = 300 V
VGE = 15 V
Rg = 4.7
L = 500 μH (1)
-0.94-
mJTurn-off switching loss Eoff -1.1-
Total switching loss Etot -2.04-
Turn-on delay time td(on) -78-
ns
Rise time tr-72-
Turn-off delay time td(off) -101-
Fall time tf-65-
Turn-on switching loss Eon
IC = 75 A
VCC = 300 V
VGE = 15 V
Rg = 4.7
L = 500 μH
TJ = 125 °C (1)
-1.13-
mJTurn-off switching loss Eoff -1.61-
Total switching loss Etot -2.74-
Turn-on delay time td(on) -78-
ns
Rise time tr-72-
Turn-off delay time td(off) -106-
Fall time tf-107-
Input capacitance Cies VGE = 0 V
VCC = 30 V
f = 1 MHz
- 4440
pFOutput capacitance Coes -245
Reverse transfer capacitance Cres -130
Reverse bias safe operating area RBSOA TJ = 175 °C, IC = 200 A,VCC = 300 V,
VP = 600 V, Rg = 4.7 , VGE = 15 V to 0 V Fullsquare
Short circuit safe operating area SCSOA Rg = 10 , VCC = 400 V, VP = 600 V
VGE = 15 V to 0 --5μs
Q2 - Q3 IGBT (WITH FREEWHEELING EXTERNAL TO-247 DIODE DISCRETE 30ETH06)
Total gate charge (turn-on) QgIC = 120 A
VCC = 400 V
VGE = 15 V
-240-
nCGate to emitter charge (turn-on) Qge -69-
Gate to collector charge (turn-on) Qgc -90-
Turn-on switching loss Eon
IC = 75 A
VCC = 300 V
VGE = 15 V
Rg = 4.7
L = 500 μH (1)
-0.85-
mJTurn-off switching loss Eoff -1.54-
Total switching loss Etot -2.39-
Turn-on delay time td(on) -111-
ns
Rise time tr-81-
Turn-off delay time td(off) -130-
Fall time tf-74-
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
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Note
(1) Energy losses include “tail” and diode reverse recovery
Turn-on switching loss Eon
IC = 75 A
VCC = 300 V
VGE = 15 V
Rg = 4.7
L = 500 μH
TJ = 125 °C (1)
-1.0-
mJTurn-off switching loss Eoff -1.83-
Total switching loss Etot -2.83-
Turn-on delay time td(on) -111-
ns
Rise time tr-83-
Turn-off delay time td(off) -140-
Fall time tf-104-
Input capacitance Cies VGE = 0 V
VCC = 30 V
f = 1 MHz
- 7750 -
pFOutput capacitance Coes -550-
Reverse transfer capacitance Cres -225-
Reverse bias safe operating area RBSOA TJ = 175 °C, IC = 250 A, VCC = 300 V,
VP = 600 V, Rg = 4.7 , VGE = 15 V to 0 V Fullsquare
Short circuit safe operating area SCSOA Rg = 10 , VCC = 400 V, VP = 600 V
VGE = 15 V to 0 --5μs
D5 - D6 CLAMPING DIODE
Diode reverse recovery time trr VR = 200 V
IF = 50 A
dl/dt = 500 A/μs
-59- ns
Diode peak reverse current Irr -8.5- A
Diode recovery charge Qrr -257- nC
Diode reverse recovery time trr VR = 200 V
IF = 50 A
dl/dt = 500 A/μs, TJ = 125 °C
-110- ns
Diode peak reverse current Irr - 18.5 - A
Diode recovery charge Qrr - 1020 - nC
D1 - D2 - D3 - D4 AP DIODE
Diode reverse recovery time trr VR = 200 V
IF = 50 A
dl/dt = 500 A/μs
-108- ns
Diode peak reverse current Irr - 19.5 - A
Diode recovery charge Qrr - 1062 - nC
Diode reverse recovery time trr VR = 200 V
IF = 50 A
dl/dt = 500 A/μs, TJ = 125 °C
-174- ns
Diode peak reverse current Irr -31- A
Diode recovery charge Qrr - 2716 - nC
INTERNAL NTC - THERMISTOR SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS
Resistance R25 TC = 25 °C 5000
R100 TC = 100 °C 493 ± 5 %
B-value B25/50 R2 = R25 exp. [B25/50 (1/T2 - 1/(298.15 K))] 3375 ± 5 % K
Maximum operating temperature 220 °C
Dissipation constant 2mW/°C
Thermal time constant 8s
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
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Note
(1) Mounting surface flat, smooth, and greased
Fig. 1 - Typical Q1 - Q4 Trench IGBT Output Characteristics
VGE = 15 V
Fig. 2 - Typical Q1 - Q4 Trench IGBT Output Characteristics
TJ = 125 °C
Fig. 3 - Maximum Q1 - Q4 Trench IGBT Continuous Collector
Current vs. Case Temperature
Fig. 4 - Typical Q1 - Q4 Trench IGBT Transfer Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Q1 - Q4 IGBT - junction to case thermal resistance (per switch)
RthJC
--0.51
°C/W
Q2 - Q3 IGBT - junction to case thermal resistance (per switch) - - 0.37
D5 - D6 clamping diode - junction to case thermal resistance (per diode) - - 0.86
D1 - D2 - D3 - D4 AP diode - junction to case thermal resistance (per diode) - - 1.4
Q1 - Q4 IGBT - case to sink thermal resistance (per switch)
RthCS (1)
-0.84 -
Q2 - Q3 IGBT - case to sink thermal resistance (per switch) - 0.8 -
D5 - D6 clamping diode - case to sink thermal resistance (per diode) - 1.16 -
D1 - D2 - D3 - D4 AP diode - case to sink thermal resistance (per diode) - 1.12 -
Case to sink thermal resistance per module - 0.1 - °C/W
Mounting torque (M4) 2- 3Nm
Weight -45 -g
0
15
30
45
60
75
90
105
120
135
150
0 0.5 1 1.5 2 2.5 3 3.5
VCE (V)
IC (A)
TJ = 175 °C
TJ = 125 °C
TJ = 150 °C
TJ = 25 °C
VCE (V)
IC (A)
0
15
30
45
60
75
90
105
120
135
150
0 0.5 1 1.5 2 2.5 3 3.5
VGE = 9 V
VGE = 18 V
VGE = 15 V
VGE = 12 V
IC - Continuous Collector Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120
DC
VGE (V)
IC (A)
0
10
20
30
40
50
60
70
80
456789101112
TJ = 25 °C
TJ = 125 °C
VCE = 20 V
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Fig. 5 - Typical Q1 - Q4 Trench IGBT Gate Threshold Voltage
Fig. 6 - Typical Q1 - Q4 Trench IGBT Zero Gate Voltage
Collector Current
Fig. 7 - Typical Q1 - Q4 Trench IGBT Energy Loss vs. IC
(with D5 - D6 Clamping Diode)
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Fig. 8 - Typical Q1 - Q4 Trench IGBT Switching Loss vs. IC
(with D5 - D6 Clamping Diode)
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Fig. 9 - Typical Q1 - Q4 Trench IGBT Energy Loss vs. Rg
(with D5 - D6 Clamping Diode)
TJ = 125 °C, VCC = 300 V, IC = 75 A, VGE = 15 V, L = 500 μH
Fig. 10 - Typical Q1 - Q4 Trench IGBT Switching Time vs. Rg
(with D5 - D6 Clamping Diode)
TJ = 125 °C, VCC = 300 V, IC = 75 A, VGE = 15 V, L = 500 μH
V
GEth
(V)
I
C
(mA)
3
3.5
4
4.5
5
5.5
6
6.5
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
TJ = 25 °C
TJ = 125 °C
VCES (V)
ICES (mA)
0.00001
0.0001
0.001
0.01
0.1
1
10
100 200 300 400 500 600
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
TJ = 175 °C
IC (A)
Energy (mJ)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 1020304050607080
Eon
Eoff
10
100
1000
0 1020304050607080
Switching time (ns)
I
C
(A)
tdon
tdoff
tr
t
f
Rg (Ω)
Energy (mJ)
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 5 10 15 20 25 30 35 40 45 50
Eoff
Eon
Rg (Ω)
Switching time (ns)
10
100
1000
0 5 10 15 20 25 30 35 40 45 50
tdon
t
doff
t
r
t
f
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Fig. 11 - Typical D5 - D6 Clamping Diode Forward Characteristics
Fig. 12 - Maximum D5 - D6 Clamping Diode Forward Current vs.
Case Temperature
Fig. 13 - Typical D5 - D6 Clamping Diode Reverse Leakage Current
Fig. 14 - Typical D5 - D6 Clamping Diode Reverse Recovery Time
vs. dIF/dt, Vrr = 200 V, IF = 50 A
Fig. 15 - Typical D5 - D6 Clamping Diode Reverse Recovery Current
vs. dIF/dt, Vrr = 200 V, IF = 50 A
Fig. 16 - Typical D5 - D6 Clamping Diode Reverse Recovery Charge
vs. dIF/dt, Vrr = 200 V, IF = 50 A
0
15
30
45
60
75
90
105
120
135
150
0 0.5 1 1.5 2 2.5 3 3.5
TJ = 150 °C
TJ = 25 °C
TJ = 125 °C
TJ = 175 °C
V
FM
(V)
I
F
(A)
IF - Continuous Forward Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
0 102030405060708090
VR (V)
IRRM (A)
0.00001
0.0001
0.001
0.01
0.1
1
10
100 200 300 400 500 600
25 °C
125 °C
150 °C
175 °C
trr (ns)
dIFdt (A/μs)
30
50
70
90
110
130
150
170
100 200 300 400 500
25 °C
125 °C
dIFdt (A/μs)
IRR (A)
0
2
4
6
8
10
12
14
16
18
20
22
100 200 300 400 500
25 °C
125 °C
Qrr (nC)
dIFdt (A/μs)
0
200
400
600
800
1000
1200
100 200 300 400 500
25 °C
125 °C
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Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Q1 - Q4 Trench IGBT)
Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics (D5 - D6 Clamping Diode)
Fig. 19 - Typical Q2 - Q3 Trench IGBT Output Characteristics
VGE = 15 V
Fig. 20 - Typical Q2 - Q3 Trench IGBT Output Characteristics
TJ = 125 °C
t1 - Rectangular Pulse Duration (s)
Z
thJC - Thermal Impedance
Junction to Case (°C/W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
0.5
0.2
0.1
0.05
0.02
0.01
DC
Z
thJC
-
Thermal Impedance
Junction to Case (°C/W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t
1
-
Rectangular Pulse Duration (s)
0.5
0.2
0.1
0.05
0.02
0.01
DC
VCE (V)
IC (A)
0 0.5 1 1.5 2 32.5
150
135
120
105
90
75
60
45
30
15
0
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
TJ = 175 °C
V
CE
(V)
I
C
(A)
0 0.5 1 1.5 2 32.5
150
135
120
105
90
75
60
45
30
15
0
VGE = 15 V
VGE = 12 V
VGE = 9 V
VGE = 18 V
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Fig. 21 - Maximum Q2 - Q3 Trench IGBT
Continuous Collector Current vs. Case Temperature
Fig. 22 - Typical Q2 - Q3 Trench IGBT Transfer Characteristics
Fig. 23 - Typical Q2 - Q3 Trench IGBT Gate Threshold Voltage
Fig. 24 - Typical Q2 - Q3 Trench IGBT Zero Gate Voltage
Collector Current
Fig. 25 - Typical Q2 - Q3 Trench IGBT Energy Loss vs. IC
(with Freewheeling External TO-247 Diode Discrete 30ETH06),
TJ = 125 °C, VCC = 300 V, Rg = 4.7 VGE = 15 V, L = 500 μH
Fig. 26 - Typical Q2 - Q3 Trench IGBT Switching Time vs. IC
(with Freewheeling External TO-247 Diode Discrete 30ETH06),
TJ = 125 °C, VCC = 300 V, Rg = 4.7 VGE= 15 V, L = 500 μH
IC - Continuous Collector Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
0 2 0 40 60 80 100 120 140 160
DC
VGE (V)
ICE (A)
0
10
20
30
40
50
60
70
80
4 5 6 7 8 9 10 11
TJ = 25 °C
TJ = 125 °C
VCE = 20 V
VGEth (V)
IC (mA)
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
TJ = 25 °C
TJ = 125 °C
VCES (V)
ICES (mA)
0.00001
0.0001
0.001
0.01
0.1
1
10
100 200 300 400 500 600
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
TJ = 175 °C
I
C
(A)
Energy (mJ)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 1020304050607080
Eoff
Eon
Switching Time (ns)
IC (A)
10
100
1000
0 1020304050607080
tdon
tdoff
t
r
tf
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Fig. 27 - Typical Q2 - Q3 Trench IGBT Energy Loss vs. Rg
(with Freewheeling External TO-247 Diode Discrete 30ETH06),
TJ = 125 °C, VCC = 300 V, IC = 75 A, VGE = 15 V, L = 500 μH
Fig. 28 - Typical Q2 - Q3 Trench IGBT Switching Time vs. Rg
(with Freewheeling External TO-247 Diode Discrete 30ETH06),
TJ = 125 °C, VCC = 300 V, IC = 75 A, VGE = 15 V, L = 500 μH
Fig. 29 - Typical D1 - D2 - D3 - D4 Antiparallel Diode
Forward Characteristics
Fig. 30 - Maximum D1 - D2 - D3 - D4 Antiparallel Diode
Forward Current vs. Case Temperature
Fig. 31 - Typical D1 - D2 - D3 - D4 Antiparallel Diode
Reverse Recovery Time vs. dIF/dt
Vrr = 200 V, IF = 50 A
Fig. 32 - Typical D1 - D2 - D3 - D4 Antiparallel Diode
Reverse Recovery Current vs. dIF/dt
Vrr = 200 V, IF = 50 A
Rg (Ω)
Energy (mJ)
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0 5 10 15 20 25 30 35 40 45 50
Eoff
Eon
Switching Time (ns)
Rg (Ω)
10
100
1000
0 5 10 15 20 25 30 35 40 45 50 55
tdon
tdoff
t
r
t
f
V
FM
(V)
I
F
(A)
0
15
30
45
60
75
90
105
120
135
150
0 0.4 0.8 1.2 1.6 2 2.4
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
TJ = 175 °C
IF - Continuous Forward Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
0 1020304050607080
DC
90
110
130
150
170
190
210
230
250
100 200 300 400 500
t
rr
(ns)
dI
F
dt (A/μs)
25 °C
125 °C
0
5
10
15
20
25
30
35
100 200 300 400 500
Irr (A)
dIF/dt (A/us)
25 °C
125 °C
VS-ETF075Y60U
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Fig. 33 - Typical D1 - D2 - D3 - D4 Antiparallel Diode
Reverse Recovery Charge vs. dIF/dt
Vrr = 200 V, IF = 50 A
Fig. 34 - Maximum Thermal Impedance ZthJC Characteristics
(Q2 - Q3 Trench IGBT)
Fig. 35 - Maximum Thermal Impedance ZthJC Characteristics
(D1 - D2 - D3 - D4 Antiparallel Diode)
Q
rr
(nC)
dI
F
dt (A/μs)
300
600
900
1200
1500
1800
2100
2400
2700
3000
100 200 300 400 500
25 °C
125 °C
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance
Junction to Case (°C/W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
0.5
0.2
0.1
0.05
0.02
0.01
DC
t1 - Rectangular Pulse Duration (s)
Z
thJC - Thermal Impedance
Junction to Case (°C/W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
0.5
0.2
0.1
0.05
0.02
0.01
DC
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ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
1-Vishay Semiconductors product
2- Package indicator (ET = EMIPAK 2B)
3- Circuit conguration (F = 3-levels half bridge inverter stage)
4- Current rating (075 = 75 A)
5-Switch die technology (Y = trench IGBT)
6- Voltage rating (60 = 600 V)
7- Diode die technology (U = ultrafast diode)
Device code
51 32 4 6 7
VS- ET F 075 Y 60 U
7
12
11
Q4
10
9
8
Q3
Ntc
D4
14
13
D3
D6
6
5
Q2
Q1
D2
D1
D5
4
2
1
1
1
1
1
2
2
2
2
2
2
3
3
3
3
3
4
4
4
4
4
VS-ETF075Y60U
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PACKAGE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95559
24
20.8
14.4
11.2
8
24
20.8
17.6
14.4
4.8
4.8
1.6
16
12.8
3.2
9.6
16
12.8
9.6
1.6
97
8
6
5
3
4441111
1
4
4
3
3
33
2222
22
22
10
13
14
12 11
8
Outline Dimensions
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EMIPAK-2B PressFit
DIMENSIONS in millimeters
56.8 ± 0.3
52.7 ± 0.5
51 ± 0.15
20.4
16.6
1.6
6.4
62.8 ± 0.3
53 ± 0.15
42.5 ± 0.15
37 ± 0.5
6.4
9.6 9.6
12.8 12.8
16 16
3.2
3.2 4.3 ± 0.3
12 ± 0.35
3 ± 0.15
4.8
88
11.2 11.2
14.4 14.4
17.6 17.6
20.8 20.8
24 24
1.6
4.8
0.4
Ø 4.4 ± 0.1
Pin position
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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