FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ a* 158 ~ ii (Te = 25C) fy (Te = 25C) mo OR aL T) | feo We A YE i eg | ghee | Fat] Com Ti ii ie % fot Ta rb b Tr je(rea m CC) | (wa) [Vou v)| (mA) Veu(V) (xo) Gea) | Me} | wks [ay | 2SC2112 | y BNIB] ON 150 | 1 20 100 *) 50 | 3.3k *} a2 etalk 125 | or | 40 yee somay | 7000") 1 20 *) 317 ats} # 125 | 1 10 | ~10 GEacute Be Ey AB ay | 6500" 0.6 | 15 *| 317 alle] 9 125 1 10 10 PO ces 10, a 3000) 1.2 | 40 *| 317 TT _ oo ; KE wys anit] on 175 | ima | 15 F vege 13,6, bo 150) | <15 | 97] 52 Ze 2yiel ow 175 J imAj} 15 ] >10} 5 lA TMs, Ver13.8V, Pe--0.6W: <25 97C) Fo jeg P.=8W ~ al 4 2119) on " Si. E 150 15 40 50 5 2A (e28MNe, Voom IV, Pie o.aw) | 268 " 2120) Si.EP| 30 100~320; 1 100 120*} 13 138 [254950 gal | SW Si.TMe! 750 15~60} 5 | 1A 8 *| 85 102 | a je = 7 {| ___ naga} ov | on + 800 >15) 10 | 2.5A| 10 | 100) w<1 Ks 6 *) 125 102 | 2123, 9 | # | 1000 | 2 3} 5 | BA} ww | -500) y<ins 6 *) 128 102 OBEN 2124 | | |} _ 4 + +] lS: - 7 2125]yo ET PA [sicrme] 2200] 5 | 5a [20M] 150 | 500 | 2200] 25 wo | 1A] 10 165 | 10 | 102 2196 | sir 6 30W J iso | 250 | 200) a | 3 | 3a] T[ 204 Re iTe: 5C: mf ej 8 _ : del on " " 6 LOOW. | 150 } 250 | 200 | 32 3 | 10A fon SUE Sa 102 212g} 9 " y 6 Poow | 150 | 500 | 200 | 22 3 | 30a fon ee SIMS 266 = _ . o Vne< 300m * 0 2129] = | AF.LN. RF | siEP| 7 | 8 | 100 | 200 | 125 | 0.1 | 50 [esn-iam) 6 | 1 6 | 1 | AOS ieaRe=to0k2, ae=80a5)| 100") 3 45 | 1388 2130] 7 | AFLRF " 5 125 | 0.1 | 50 f250~2200] 6 1 6 | -1 100*| 3 1388 sil oo {PA 4 175 | 100 | 25 } 50 | 10 | 100 | op sonia =0.3W)| 84B SS 2 feel 213af on " f 4 175 [| imA | 15 | 50 | lo | 1A | y= 5573, Pw) 313] MTHOO4| 2133) on fon | " 175 | 2mA | 35 | 50 | 25 | 200 Ree 313 yee a an a ened Gree nen ere eee eee - 2134) 9 1 lon 175 | 5mA | 35 | 50 | 25 | 200 nee oOke f assly=| sw Si-EPa 60 | 0.001) 3 | >soo] 3 | 1 CO may | 198 | 8H I: 2136 | 2137)" | Sw [,e08.| 150 | 100 sl gs. uy <las | 102 pa ee 238 on | Ne, 150 | 100 1a |e 2gS, 1a | 6 "| | 102 239} "| WOW T50 | 100 PS SIS | | # 2140) on " 100M 150 | 100 ors BaBe 11S PHS 6 * Vi02| # 24i\y2|PA 950 { 120 | 0.2 50 *| 15 4B) Sot,