MOTOROLA SC {XSTRS/R FT Fb ef b3b7254 OOS8lb?b ? Tr 6357254 MOTOROLA SC CXSTRS/R F " " 96D 81676 D 7229-17 BC251,A,B,C ; BC252,A,B,C MAXIMUM RATINGS Rating Synbor [Be [Be] BO] Uni BC256,A,B FA 256|251/252 CoHactor-Emitter Voltage VCEO 65 | 45 | 25 Vde CASE 29-04, STYLE 17 Collector-Base Voltage Vcpo_ | 80 | 50 | 30 Vde 10-92 (TO-226AA) Emitter-Base Voltage VEBO 5.0 Vde Collector Current - Continuous Ic 100 mAdc Total Device Dissipation @TA = 25C Pb 350 mw SS 4 Collector Derate above 25C 2.8 mWwv/C Total Device Dissipation @ Tc = 25C Pp 1.0 Watt Derate above 25C 8.0 mWw/C bee Operating and Storage Junction Ty, Tstg |-55 to +150 C 4 Temperature Range 2 3 Emitter THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit AMPLIFIER TRANSISTORS Therma! Resistance, Junction to Case Rasc 125 C/W Thermal Resistance, Junction to Ambient RaJc 357 C/W PNP SILICON Refer to BC556 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) iz Characteristic | Type [| Symbol | Min. [ typ. | Max. | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR}]CEO Vv (Ic. = 2.0 mA, Ip = 0) BC256 65 BC251 45 BC252 25 Emitter-Base Breakdown Voltage V(BR)EBO Vv (IE = 100 pA, tc = 0) BC256 5 BC251 5 BC252 5 Collector-Emitter Leakage Current Ices nA (VCES = 40 V) BC256 2 100 (VcES = 20 V) BC251 2 100 BC252 2 100 (Vces = 20 V, Ta = 125C} BC256 4 pA BC251 4 BC252 4 ON CHARACTERISTICS DC Current Gain hre : (ic = 10 pA, VcE = 5 V) BC251A/2A/6A 90 BC251B/2B/6B 150 BC252C 270 (ic = 2 mA, VcE = 5 V) BC256 125 500 BC251 120 800 BC252 120 800 BC251A/2A/6A 120 170 220 BC2518/2B/6B 180 230 460 BC251C/BC252C 380 500 800 (I = 100 mA, VcE = 5 V) BC251A/2A/6A 120 BC251B/2B/6B 180 BC252C 300 Collector-Emitter Saturation Voltage VCE(sat) Vv (ic = 10 mA, Ig = 0.5 mA} 0.075 0.3 {lc = 100 mA, Ig = 5 mA) 0.25 0.65 Base-Emitter Saturation Voltage VBE(sat) v {Ic = 10 mA, Ip = 0.5 mA) 0.70 {Ic = 100 mA, Ip = 5 mA) 1.00 Base-Emitter on Voltage VBE(on)} Vv (Ic = 2 mA, VcE = 5 V)} 0.85 0.62 0.70 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-83MOTOROLA SC {IXSTRS/R FI Tb DE uau7254 OO61b77 4 T 6367254 MOTOROLA SC (XSTRS/R F) 86D 81677 DB BC251,A,B,C, BC252,A,B,C, BC256,A,B i 7 =f . / G ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted) Characteristic | Type [Symbol | Min. [| Typ. | Max. [ Unit | DYNAMIC CHARACTERISTICS 2 Be Current-Gain Bandwidth Product fT MHz (Ic = 10 mA, VcE = 5 V, f = 50 MHz) BC256 280 BC251 320 BC252 360 Output Capacitance Cob pF i (Vcp = 10 V, Ic = 0, f = 1 MHz) 3 6.0 Noise Figure NF dB (lc = 0.2 mA, VcE = 5 V, RS = 2 Kohms, BC256 2 10 f = 1 KHz, Af = 200 Hz) BC251 2 10 BC252 2 10 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-84MOTOROLA SC {XSTRS/R FY db DE feaar7esy ooaiz2zz o ff 6367254 MOTOROLA SC (XSTRS/R F) 96D 81722 B TTA! BCX58,-7,-8,-9,-10 BCX59,-7,-8,-9,-10 T we RA ngs a KT EXE CASE 29-04, STYLE 17 ating ymbo ni cx | Be TO-92 (TO-226AA) Collector-Emitter Voltage VCEO 32 45 Vdc Collector-Base Voitage VcBo 32 45 Vde Emitter-Base Voltage VEBO 7.0 Vdo NS 1 Collector Collector Current - Continuous Ic 100 mAdc Total Device Dissipation @ TA = 25C Pp 625 mw 2 Derate above 25C 5.0 mW/C Base Total Device Dissipation @Tc = 25C Pp 1.5 Watt 1 Derate above 25C 12 mw/ec 2 3 3 Emitter Operating and Storage Junction Ty, Tstg |55 to +150 Temperature Range THERMAL CHARACTERISTICS A T N Characteristic Symbol Max Unit MPLIFIER TRANSISTORS Thermal Resistance, Junction to Case Rasc 83.3 oc/w NPN SILICON Thermal Resistance, Junction to Ambient Raic 200 C/W ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO Vde (ic = 10 mAdg, Ip = 0) BCX58 32 _ _ BCX59 45 Emitter-Base Breakdown Voltage All V(BRJEBO 7.0 8.7 _ Vde (lp = 1.0 pAde, Ic = 0} Collector Cutoff Current (VCE = 32 V) BCX58 Ices - _- 10 nAdc (Vce = 45 V) BCX59 IcES _ _ 10 (VcE = 32V, Ta = 100C, Vgpe = 0.2V) ~ BCX5B IcEXx - _ 20 pAdc (VCE = 45 V, Ta = 100C, Vge = 0.2V) BCX59 ICEX _ _ 20 (Voce = 32 V. Ta = 125C) BCX58 ICES - - 25 (Vce = 45 V, Ta = 125C} BCX59 Ices = _- 25 Emitter-Cutoff Current leBO _ _ 20 nAdc (Vepo = 4.0 V, Ic = 0) ON CHARACTERISTICS DC Current Gain hee _ (lc = 10 pAdc, VCE = 5.0 Vdc} BCX58-7, BCX59-7 20 80 _- BCX58-8, BCX59-8 40 145 _ BCX58-9, BCX59-9 75 220 _ BCX58-10, BCX59-10 100 300 _- (Ic = 2.0 mAde, Voge = 5.0 Vdc) BCX58-7, BCX59-7 120 170 220 BCX58-8, BCX59-8 180 250 310 BCX58-9, BCX539-9 250 350 460 BCX58-10, BCX59-10 380 500 630 (ic = 10 mAdc, VcE = 1.0 Vdc} BCX58-7, BCX59-7 80 190 _ BCX58-8, BCX59-8 120 260 400 BCX58-9, BCX59-9 160 380 630 BCX58-10, BCX59-10 240 550 1000 {I = 100 mAde, VcE = 2.0 Vde) BCX58-7, BCX59-7 40 _ _ BCX58-8, BCX59-8 45 ~ _ BCX58-9, BCX59-9 60 _ _ BCX58-10, BCX59-10 60 _ _ Collector-Emitter Saturation Voltage VCE(sat) _ _ 0.5 Vde {ig = 100 mAdc, Ig = 5.0 mAdc} Base-Emitter Saturation Voltage VBE(sat) _ _- 1.0 Vde {ic = 100 mA, Ip = 2.5 mAde) Base-Emitter On Voitage VBE{on) 0.55 - 0.7 Vde (tc = 2.0 mAde, VcE = 5.0 Vde} MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-129MOTOROLA SC {XSTRS/R FF Fh pe cau7254 OO417e5 1 T 6367254 MOTOROLA SC CXSTRS/R FD) 95D 81723 OD BCX58,-7,-8,-9,-10, BCX59,-7,-8,-9,-10 TG@aAal i ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) | Characteristic {Symbol {| Min Typ | Mex | Unit | SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT 125 250 - MHz (Ic = 10 mAde, Voge = 5.0 V, f = 100 MHz) | Output Capacitance Cob _ 18 45 pF (VcE = 10 Vde, Ic = 0, f = 1.0 MHz) Input Capacitance Cib _ 5.2 15 pF 1 (Vee = 0.5 V, Ic = 0, f = 1.0 MHz) : Small-Signa!l Current Gain hfe _ (ic = 2.0 mAde, Veg = 5.0 Vde, f = 1.0 kHz) BCXS8-7, BCX59-7 125 _ 250 BCX58-8, BCX59-8 175 _ 350 BCX58-3, BCX59-9 250 _ 500 BCX58-10, BCX59-10 350 _ 700 Noise Figure NF dB (Ig = 0.2 mAdc, Vcg = 5.0 Vde, Rg = 2.0 kohms, f = 1.0 kHz) - 1.0 6.0 {Ic = 10 mA, 1g1 = 1.0 mA, Igo = 1.0 mA) Ta - 16 - ns (Vpp = 3.6 V, Ry = Ro = 5.0 k9) Tr 29 (RL = 999 ohms) Ton _ 45 150 *See test circuit Ts _ 475 _ TE _ 40 _ Toft - 515 800 {Ic = 100 mA, Ip1 = 10 mA, Igo = 10 mA) ty _ .0 - ns (Vgp = 5.0 V, Ry = 5000, Rg = 700 Q) tr _ 40 - (Ry, = 98 ohms) ton _ 45 150 *See test circuit ts _ 135 _ tt - 80 _ toff -~. 215 800 -Vgp +10ViVccl 1 Us +10V to oscilloscope t <5 ns TR<5ns 1N4935 Z_ 2100 KQ Ry= 5022 v <001 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-130MOTOROLA SC {XSTRS/R FF qb DE e3e7254 cosizey 3 6367254 MOTOROLA SC CXSTRS/R F) S$6D 81724. D - BCX58,-7,-8,-9,-10, BCX59,-7,-8,-9,-10 / ot 4 oe/ FIGURE 1 NORMALIZED OC CURRENT GAIN FIGURE 2 SATURATION AND ON VOLTAGES Ta -25 ~ 5V x wb @iclg= 10 Ld & 2 2 @vcge= dv 6 2 E a e 5 5 3 8 a > VCE lsat) @ FC Jeg - 10 01 i 1 10 106 200 @1 0203 650710 703G 567610 70 30 $670 100 {c. COLLECTOR CURRENT [mAdc) Ic, COLLECTOR CURRENT (mAdc) FIGURE 3 COLLECTOR SATURATION REGION FIGURE 4 BASE-EMITTER TEMPERATURE COEFFICIENT Ie - 200 -5 Cio +1 Vee, COLLECTOR EMITTER VOLTAGE (V} (yg, TEMPERATURE COEFFICIENT (mV/Q9C) ms o oa 01 1 10 O1 1 10 400 (g. BASE CURRENT (mAde) Ic, COLLECTOR CURRENT {mAdc} FIGURE 5 CAPACITANCES FIGURE 6 CURRENT-GAIN-BANDWIDTH PRODUCT Ta ~ 25C Vee [tv Ta 170C C, CAPACITANCE (pF) ft, CURRENT GAIN-BANDWIDTH PRODUCT (MHz) O4 06 0810 20 40 60 8010 20 40 a5 07 10 70 #30 5970 10 uv Ww 50 Vp, REVERSE VOLTAGE {Volts} ig. COLLECTOR CURRENT (mAdc} MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-131