ky SGS-THOMSON MICROELECTRONICS IRF240 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS _TYPE | _| Voss Roson) Ib IRF240 200 V 0.182 | 118A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100C APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) MOTOR CONTROL, AUDIO AMPLIFIERS INDUSTRIAL ACTUATORS DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM D (case) 6 (1) Ss (2) ABSOLUTE MAXIMUM RATINGS | Symbol Parameter ~ Value Unit | Vos Drain-source Voltage (Vas = 0) 200 Vv fo VoarR Drain- gate Voltage (Res = 20 kQ) 200 Vv Vas Gate-source Voltage +20 Vv lo 'Drain Current (cont.) at Te = 25 C 18 A Ip Drain Current (cont.} at Tc = 100 11 A lom(e) jDrain Current (pulsed) 72 A Ptot Total Dissipation at T, = 25 C 125 w Derating Factor 1 WPPG Tstg Storage Temperature -65 to 150 Tj Max. Operating Junction Temperature | 150 | (*) Pulse width limited by safe operating area April 1992 141IRF240 THERMAL DATA Rthj-case |Thermal Resistance Junction-case Max 1 Ciw Rthj-amb {Thermal Resistance Junction-ambient Max 30 C/w Rinc-s |Thermal Resistance Case-sink Typ 0.1 C/W T Maximum Lead Temperature For Soldering Purpose 300 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit lar Avalanche Current, Repetitive or Not-Repetitive 18 A (pulse width limited by Tj max, 6 < 1%) Eas Single Pulse Avalanche Energy 580 mJ (starting Tj = 25 C, tp = tar, Vop = 25 V) Ear Repetitive Avalanche Energy 13 mJ (pulse width limited by Tj max, 3 < 1%) lar Avalanche Current, Repetitive or Not-Repetitive 1 A (T. = 100 C, pulse width limited by Tj max, 6 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Viprypss |Drain-source Ib=250 uA Vas =0 200 Vv Breakdown Voitage loss Zero Gate Voltage Vos = Max Rating 250 HA Drain Current (Ves = 0) |Vos = Max Ratingx 0.8 Te = 125C 1000 HA lass Gate-body Leakage Ves=+20V + 100 nA Current (Vps = 0) ON (#) Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Vasitn) |Gate Threshold Voltage|Vos = Vas Ip = 250 pA 2 4 Vv Rosjon) |Static Drain-source On |Vas=10V In =10A 0.18 Q Resistance Ip(on) On State Drain Current |Vps > ID(on) X Rosionymax Ves = 10 V 18 A DYNAMIC Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Qts (*) |Forward Vos > Ip(on) X Rpsionymax tp =10A 6.7 Ss Transconductance Ciss Input Capacitance Vos=25V f=1MHz Ves=0 2300 pF Coss Output Capacitance 400 pF Crss Reverse Transfer i 150 pF Capacitance | 2/6 &7 SGS-THOMSON If wmicrorsctrowics 142IRF240 ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD " Symbol taion} tr tatott) te Parameter | Test Conditions Min. | Typ. | Max. | Unii | . _ a {on Turn-on Time Vopo=100V Ip =18A | 50 65 ns | Rise Time (Ra=9.1Q Ves = 10V ' 90 | 120 ns | {turn-off Delay Time | (see test circuit) 85 | 110 ns | Fall Time 60 | 80 ns! Qy [Total Gate Charge ln=18A Vos=10V 6 = 85 | nk Vop = Max Rating x 0.8 (see test circuit) | | ij SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit ! pr a a tee Isp Source-drain Current 18 A | Ispm(*) |Source-drain Current 72 A j(pulsed) _ . | Forward On Voltage Isp = 18 A Vas=0 | 1.6 Vv Reverse Recovery Isp = 18 A di/dt = 100 A/us 260 ns [Time Vop = 100 V_ Tj = 150C | Qr Reverse Recovery 2 | uc | (Charge _ _ oe f. | (+) Pulsed: Pulse duration = 300 us, duty cycle 1.5 % (e) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 'ofA) K 2 107, 6 2 10, 107! 6 Zin = k Rinse ; ERAT = bef 10. D.C. OPERATION SINGLE PULSE = U L sad ty ee 1o7' 107 10 10! 107 Vpg (V) oF 107* 107% 10 #1071 +, (s) 3/6 i Sa SGS-THOMSON esi IF imcrosecrromes 143 aIRF240 Derating Curve Prot (W) [77 Output Characteristics GO19220 Ip (A) Vos =1V fi 4 be-4 we 1... 5V : gat pe. ag 6 0 25 49 60 BC Vys (V) Transconductance GC12250 G56) i | i ' | Pog pe. bod _ 39 [nn 4108 Blom *Rosrs 15 - an 4G 144 Output Characteristics Ip (A) 24 Transfer Characteristics in (A) - C 2 4 & Vos () Static Drain-source On Resistance CC19271 Rosvon) T ; | (9) - boop bd 0.3 | | I 0.25 ant L 0.2 pte 0.15 jt 0.1 - + | Hb 0.05 i | fe ee | QO 4 8 12, 16 = 20 43(aA) SGS-THOMSON MICROELECTRONICSMaximum Drain Current vs Temperature 0 25 50 75 100 Tz (C) Capacitance Variations GC193t! Clp*) 3500 3000 2500 2900 300 000 0 25 56 75 Vas() Normalized On Resistance vs Temperature Rosior) (norm) 2.0 IRF240 Gate Charge vs Gate-source Voltage raval Vos (V3 a | Normalized Breakdown Voltage vs Temperature 609300 Vear)oss (nares) he i ee 2 eyed Vos7O0 1.2--- = te p=250 KA -50 0 50 29 TC) Source-drain Diode Forward Characteristics GO19SI0 Iso (A) ee 15 10 1.0 0.5 Oo 10 50 0 50. 00 T.(%) [yy SGS-THOMson If iicrosizetacmes 145IRF240 Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms Vcar)oss 3.3 yer Yoo ee SCOS9B0 $C05970 Switching Time Test Circuit Gate Charge Test Circuit | 5 Da 12V wie I} Nika 100nF R. 2200 3.3 L JT] wr per Yop oS 1 1,=CONST | J Lv * o = V, =20V=Vewax s 000 ce DUT, G a D.U.T i gail ve Os =_ $C05990 It Py 6/6 ci i SGS-THOMSON oo MICROELECTRONICS 146