Switching transistors (Continued) lType Fig. | Maximum ratings Characteristics a (lf Ne Page at 3 jz famp = +45C [Io |Uceo |Ucesat at ie fare at Ic and Uce |fon | fote at 4c and /B1i/B2 So a Ww A Vv Vv A mA Vv ns ns mA mA mA 2N 3019 NPN |2 0,71 1 80 =0,5 0,5 100-300 | 150 10 - - - - 2 N 3053 NPN |2 0,89 1 40 =1,4 0,15 | 50-250 150 10 - - - - 2N 3700 NPN | 1 0,44 1 80 =0,5 0,5 100-300 | 150 10 - - - - 2 .N 4033 NPN | 2 0,71 1 80 =0,5 0,5 100-300 | 100 5 <100 )}< 400 | 500 50; 50 2 N 4036 PNP |2 0,88 1 65 = 0,65 0,15 |40-140 150 10 <110 |< 700 | 150 16; 15 Data book reference:B 2D Can be delivered as "Qualified semiconductor device Power switching transistors Type Structure | Fig. Maximum ratings Characteristics Nr. P, tot at case = 45C lo UcEO tf at Io hee at le and UcE UcEsat at lo and Ace Ww A Vv ys A A v Vv A BDY 42 NPN 8 60 5 250 =1 2,5 = 20 1 2 =1,5 5 3,3 BDY 43 NPN 8 60 5 300 =1 2,5 = 20 1 2 =1,5 5 3,3 BDY 44 NPN 8 60 5 350 =1 2,5 = 20 1 2 =1,5 5 3,3 BDY 45 NPN 8 95 15 250 =1 5 = 20 2 2 =1,5 15 3 BDY 46 NPN 8 95 15 300 =1 5 = 20 2 2 =1,5 15 3 BDY 47 NPN 8 95 15 350 =1 5 220 2 2 =1,5 15 3 BU 126 NPN 8 40') 3 300 =1 2,5 215 1 5 =10 2,5 10 BU 526 NPN 8 86') 8 400 =1 4 =6 4 5 =5 8 2,6 BUX 30) NPN 8 90') 10 400 =2 5 = 150 5 3 =3 10 25 BUY 50 NPN 8 95 15 250) |<1 5 = 20 2 2 =1,5 15 3 Remarks: ') f,as = 25C; ) Darlington transistor; ) Avalanche energy Ep S150 mWs, Rpp = 2kO, io =5A Data book reference: B 2 C Fig. 1: JEDEC TO 18 9327 moe | = ir 05,2 4.2 18 A3 DIN 41876 1 1 Il 1 ( 14 Fig. 4: 10A3 DIN 41 868 JEDEC TO 922 Olsoors. 0,965 0,95 _ i. | be 25126 | , SETHE 5303 Fig. 5: 23 A3 DIN 41 869 (SOT 23) Fig. 2: 5C 3 DIN 41873 JEDEC TO 39 e328 Fig. 3: 10 A3 DIN 41 868 JEDEC TO 92; Z 5263 a Fig. 8: 3B 2 DIN 41872 JEDEC TO3 at le 9-145 21