934057803115 - NXP SEMICONDUCTORS

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On 7 February 2017 the former NXP Standard Product business became a new company with the

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

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1. Product proﬁle

1.1 General description

Low capacitance unidirectional ﬁvefold ElectroStatic Discharge (ESD) protection diode

arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to

ﬁve unidirectional signal lines from the damage caused by ESD and other transients.

1.2 Features

1.3 Applications

PESDxL5UF; PESDxL5UV;

PESDxL5UY

Low capacitance unidirectional ﬁvefold ESD protection diode

arrays

Rev. 02 — 8 January 2008 Product data sheet

Table 1. Product overview

Type number Package Package conﬁguration

NXP JEITA JEDEC

PESD3V3L5UF SOT886 - MO-252 leadless ultra small

PESD5V0L5UF SOT886 - MO-252 leadless ultra small

PESD3V3L5UV SOT666 - - ultra small and ﬂat lead

PESD5V0L5UV SOT666 - - ultra small and ﬂat lead

PESD3V3L5UY SOT363 SC-88 - very small

PESD5V0L5UY SOT363 SC-88 - very small

nESD protection of up to ﬁve lines nUltra low leakage current: IRM =5nA

nLow diode capacitance nESD protection up to 20 kV

nMax. peak pulse power: PPP =25W nIEC 61000-4-2; level 4 (ESD)

nLow clamping voltage: VCL =12V nIEC 61000-4-5 (surge); IPP = 2.5 A

nComputers and peripherals nCommunication systems

nAudio and video equipment nPortable electronics

nCellular handsets and accessories nSubscriber Identity Module (SIM) card

protection

Product data sheet Rev. 02 — 8 January 2008 2 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

1.4 Quick reference data

2. Pinning information

Table 2. Quick reference data

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff voltage

PESD3V3L5UF

PESD3V3L5UV

PESD3V3L5UY

- - 3.3 V

PESD5V0L5UF

PESD5V0L5UV

PESD5V0L5UY

- - 5.0 V

Cddiode capacitance f = 1 MHz; VR=0V

PESD3V3L5UF

PESD3V3L5UV

PESD3V3L5UY

- 2228pF

PESD5V0L5UF

PESD5V0L5UV

PESD5V0L5UY

- 1619pF

Table 3. Pinning

Pin Description Simpliﬁed outline Symbol

PESD3V3L5UF; PESD5V0L5UF

1 cathode (diode 1)

2 common anode

3 cathode (diode 2)

4 cathode (diode 3)

5 cathode (diode 4)

6 cathode (diode 5)

PESD3V3L5UV; PESD5V0L5UV

1 cathode (diode 1)

2 common anode

3 cathode (diode 2)

4 cathode (diode 3)

5 cathode (diode 4)

6 cathode (diode 5)

bottom view

321

456

006aaa159

123

456 61

006aaa159

Product data sheet Rev. 02 — 8 January 2008 3 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

PESD3V3L5UY; PESD5V0L5UY

1 cathode (diode 1)

2 common anode

3 cathode (diode 2)

4 cathode (diode 3)

5 cathode (diode 4)

6 cathode (diode 5)

Table 3. Pinning

…continued

Pin Description Simpliﬁed outline Symbol

132

56 61

006aaa159

Table 4. Ordering information

Type number Package

Name Description Version

PESD3V3L5UF XSON6 plastic extremely thin small outline package;

no leads; 6 terminals; body 1 ×1.45 ×0.5 mm SOT886

PESD5V0L5UF

PESD3V3L5UV - plastic surface-mounted package; 6 leads SOT666

PESD5V0L5UV

PESD3V3L5UY SC-88 plastic surface-mounted package; 6 leads SOT363

PESD5V0L5UY

Table 5. Marking codes

Type number Marking code[1]

PESD3V3L5UF A1

PESD5V0L5UF A2

PESD3V3L5UV E1

PESD5V0L5UV E2

PESD3V3L5UY K3*

PESD5V0L5UY K4*

Product data sheet Rev. 02 — 8 January 2008 4 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

5. Limiting values

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.

[1] Device stressed with ten non-repetitive ESD pulses.

[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

PPP peak pulse power tp= 8/20 µs[1][2] -25W

IPP peak pulse current tp= 8/20 µs[1][2] - 2.5 A

Per device

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 7. ESD maximum ratings

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Max Unit

Per diode

VESD electrostatic discharge voltage IEC 61000-4-2

(contact discharge) [1][2] -20kV

MIL-STD-883 (human

body model) -10kV

Table 8. ESD standards compliance

Standard Conditions

Per diode

IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model) > 4 kV

Product data sheet Rev. 02 — 8 January 2008 5 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

6. Characteristics

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5 Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t (µs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 µs

50 % IPP; 20 µs

001aaa631

IPP

100 %

90 %

30 ns 60 ns

10 %

tr = 0.7 ns to 1 ns

Table 9. Characteristics

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff voltage

PESD3V3L5UF

PESD3V3L5UV

PESD3V3L5UY

- - 3.3 V

PESD5V0L5UF

PESD5V0L5UV

PESD5V0L5UY

- - 5.0 V

IRM reverse leakage current

PESD3V3L5UF

PESD3V3L5UV

PESD3V3L5UY

VRWM = 3.3 V - 75 300 nA

PESD5V0L5UF

PESD5V0L5UV

PESD5V0L5UY

VRWM = 5.0 V - 5 25 nA

VBR breakdown voltage IR=1mA

PESD3V3L5UF

PESD3V3L5UV

PESD3V3L5UY

5.3 5.6 5.9 V

PESD5V0L5UF

PESD5V0L5UV

PESD5V0L5UY

6.4 6.8 7.2 V

Product data sheet Rev. 02 — 8 January 2008 6 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.

Cddiode capacitance f = 1 MHz;

VR=0V

PESD3V3L5UF

PESD3V3L5UV

PESD3V3L5UY

- 2228pF

PESD5V0L5UF

PESD5V0L5UV

PESD5V0L5UY

- 1619pF

VCL clamping voltage [1][2]

PESD3V3L5UF

PESD3V3L5UV

PESD3V3L5UY

IPP =1A --10V

PESD3V3L5UF

PESD3V3L5UV

PESD3V3L5UY

IPP = 2.5 A - - 12 V

PESD5V0L5UF

PESD5V0L5UV

PESD5V0L5UY

IPP =1A --10V

PESD5V0L5UF

PESD5V0L5UV

PESD5V0L5UY

IPP = 2.5 A - - 12 V

rdif differential resistance IR=1mA

PESD3V3L5UF

PESD3V3L5UV

PESD3V3L5UY

- - 200 Ω

PESD5V0L5UF

PESD5V0L5UV

PESD5V0L5UY

- - 100 Ω

Table 9. Characteristics

…continued

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 02 — 8 January 2008 7 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

Tamb =25°C

Fig 3. Peak pulse power as a function of exponential

pulse duration; typical values Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical values

f = 1 MHz; Tamb =25°C

(1) PESD3V3L5UF; PESD3V3L5UV; PESD3V3L5UY

(2) PESD5V0L5UF; PESD5V0L5UV; PESD5V0L5UY

Fig 5. Diode capacitance as a function of reverse

voltage; typical values Fig 6. Relative variation of reverse current as a

function of junction temperature; typical values

006aab139

110

103

10 102

102

PPP

(W)

tp (µs)

006aab140

Tj (°C)

0 15010050

0.4

0.8

0.2

0.6

1.0

1.2

PPP

PPP(25°C)

006aab141

VR (V)

054231

(1)

(2)

(pF)

006aab142

Tj (°C)

−75 −25 17512525 75

10−1

IR(25°C)

Product data sheet Rev. 02 — 8 January 2008 8 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

Fig 7. V-I characteristics for a unidirectional ESD protection diode

006aaa407

−VCL −VBR −VRWM −IRM

−IR

−IPP

P-N

−+

Product data sheet Rev. 02 — 8 January 2008 9 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

Fig 8. ESD clamping test setup and waveforms

006aab143

50 Ω

vertical scale = 200 V/div

horizontal scale = 50 ns/div

unclamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network)

unclamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network)

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 5 V/div

horizontal scale = 50 ns/div

GND

GND1

GND2

GND

450 ΩRG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

(1)

vertical scale = 5 V/div

horizontal scale = 50 ns/div

(1): attenuator is only used for open

socket high voltage measurements

PESD5V0L5UF/V/Y

PESD3V3L5UF/V/Y

DUT

Device

Under

Test

Product data sheet Rev. 02 — 8 January 2008 10 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

7. Application information

The devices are designed for the protection of up to ﬁve unidirectional data or signal lines

from the damage caused by ESD and surge pulses. The devices may be used on lines

where the signal polarities are both, positive and negative with respect to ground. The

devices provide a surge capability of 25 W per line for an 8/20 µs waveform each.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the device as close to the input terminal or connector as possible.

2. The path length between the device and the protected line should be minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground

vias.

Fig 9. Typical application for unidirectional

application of ﬁve lines Fig 10. Typical application for bidirectional application

of four lines

006aab144

DUT

GND

high-speed data lines

006aab145

DUT

GND

high-speed data lines

Product data sheet Rev. 02 — 8 January 2008 11 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

8. Package outline

Fig 11. Package outline PESDxL5UF (SOT886) Fig 12. Package outline PESDxL5UV (SOT666)

Fig 13. Package outline PESDxL5UY (SOT363/SC-88)

04-07-22Dimensions in mm

0.25

0.17

0.40

0.32 0.35

0.27

0.5

0.6

1.05

0.95

1.5

1.4 0.5

0.50

max 0.04

max

Dimensions in mm 04-11-08

1.7

1.5

1.7

1.5

1.3

1.1

0.18

0.08

0.27

0.17

0.5

pin 1 index

123

456

0.6

0.5

0.3

0.1

06-03-16Dimensions in mm

0.25

0.10

0.3

0.2

pin 1

index

1.3

0.65

2.2

2.0 1.35

1.15

2.2

1.8 1.1

0.8

0.45

0.15

132

465

Product data sheet Rev. 02 — 8 January 2008 12 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

9. Packing information

[1] For further information and the availability of packing methods, see Section 13.

[2] T1: normal taping

[3] T4: 90° rotated reverse taping

[4] T2: reverse taping

10. Soldering

Table 10. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 4000 5000 8000 10000

PESD3V3L5UF SOT886 4 mm pitch, 8 mm tape and reel; T1 [2] - - -115 - -

4 mm pitch, 8 mm tape and reel; T4 [3] - - -132 - -

PESD5V0L5UF SOT886 4 mm pitch, 8 mm tape and reel; T1 [2] - - -115 - -

4 mm pitch, 8 mm tape and reel; T4 [3] - - -132 - -

PESD3V3L5UV SOT666 2 mm pitch, 8 mm tape and reel - - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - - -

PESD5V0L5UV SOT666 2 mm pitch, 8 mm tape and reel - - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - - -

PESD3V3L5UY SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - - -135

4 mm pitch, 8 mm tape and reel; T2 [4] -125 - - - -165

PESD5V0L5UY SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - - -135

4 mm pitch, 8 mm tape and reel; T2 [4] -125 - - - -165

Reﬂow soldering is the only recommended soldering method.

Fig 14. Reﬂow soldering footprint PESDxL5UF (SOT886)

sot886_fr

solder lands

occupied area

solder paste

Dimensions in mm

0.425

(6×)

1.250

0.675

1.700

0.325

(6×)

0.270

(6×)

0.370

(6×)

0.500

Product data sheet Rev. 02 — 8 January 2008 13 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

Reﬂow soldering is the only recommended soldering method.

Fig 15. Reﬂow soldering footprint PESDxL5UV (SOT666)

Fig 16. Reﬂow soldering footprint PESDxL5UY (SOT363/SC-88)

solder lands

solder resist

placement area

occupied area

0.075 Dimensions in mm

2.75

2.45

2.10

1.60

1.20

2.20

2.50

2.00 1.70 1.00 0.30 (2×)

0.15

(4×)

0.375

(4×)

0.40

(6×)

0.55

(2×)

sot363

1.20

2.40

0.50

(4×)

0.40

(2×)0.90 2.10

0.50

(4×)

0.60

(2×)

2.35

2.65

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

Product data sheet Rev. 02 — 8 January 2008 14 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

Fig 17. Wave soldering footprint PESDxL5UY (SOT363/SC-88)

solder lands

solder resist

occupied area

1.15

3.75

transport direction during soldering

1.000.30 4.00

4.50

5.25

sot363

Dimensions in mm

Product data sheet Rev. 02 — 8 January 2008 15 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESDXL5UF_V_Y_2 20080108 Product data sheet - PESD3V3L5UV_

PESD5V0L5UV_1

PESD3V3L5UY_

PESD5V0L5UY_1

Modiﬁcations: •The format of this data sheet has been redesigned to comply with the new

identity guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Type numbers PESD3V3L5UF and PESD5V0L5UF added

•Table 1 “Product overview”: added

•Section 4 “Marking”: marking code for PESD3V3L5UV amended

•Section 4 “Marking”: marking code for PESD5V0L5UV amended

•Section 4 “Marking”: marking code for PESD3V3L5UY amended

•Section 4 “Marking”: marking code for PESD5V0L5UY amended

•Figure 7: added

•Section 9 “Packing information”: added

•Section 10 “Soldering”: added

•Section 12 “Legal information”: updated

PESD3V3L5UV_PESD5V0L5UV_1 20040323 Product speciﬁcation - -

PESD3V3L5UY_PESD5V0L5UY_1 20040323 Product speciﬁcation - -

Product data sheet Rev. 02 — 8 January 2008 16 of 17

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors PESDxL5UF/V/Y

Low capacitance unidirectional ﬁvefold ESD protection diode arrays

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 8 January 2008

Document identifier: PESDXL5UF_V_Y_2

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Application information. . . . . . . . . . . . . . . . . . 10

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

9 Packing information. . . . . . . . . . . . . . . . . . . . . 12

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16

12.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

13 Contact information. . . . . . . . . . . . . . . . . . . . . 16

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17