2N4431 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI 2N4431 is Designed for Class C Amplifier Applications Up to 1,000 MHz. A 45 C E E B FEATURES: B * PG = 7.0 dB Typ. at 5.0 W/1000 MHz * Emitter Ballasting for Ruggedness * OmnigoldTM Metallization System C D J E I F G H K MAXIMUM RATINGS #8-32 UNC MAXIMUM DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 IC 2.0 A B .220 / 5.59 .230 /5.84 VCB 45 V C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 PDISS 20 W @ TC = 25 OC E .117 / 2.97 -65 to +200 OC G TJ .130 / 3.30 .245 / 6.22 H -65 to +150 OC JC 8.8 OC/W CHARACTERISTICS SYMBOL IC = 3 mA BVCER IC = 20 mA BVEBO IE = 3 mA J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10805 NONE O TC = 25 C TEST CONDITIONS BVCBO .255 / 6.48 .640 / 16.26 I TSTG .137 / 3.48 .572 / 14.53 F MINIMUM TYPICAL MAXIMUM RBE = 10 45 V 45 V 3.5 V ICBO VCE = 28 V hFE VCE = 5.0 V IC = 100 mA 15 Ft VCE = 20 V IC = 100 mA 600 Cob VCB = 28 V PG C VCE = 28 V f = 1,000 MHz 500 A 150 --MHz f = 1.0 MHz POUT = 5.0 W UNITS 10 6.0 40 7.0 50 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 1/1 Specifications are subject to change without notice.