TOSHIBA TENTATIVE 188402 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1838402 HIGH SPEED SWITCHING APPLICATIONS Unit in mm 2.140.1 e Two independent diodes are mounted on four-pin ultra-small 2520.1 packages that are suitable for higher mounting densities. _-H TI Nyx 1 4 2 e Low Forward Voltage : VF(3) = 0.50 V (Typ.) a a $e e Low Reverse Current : IR = 0.5 A (Max.) 7 2 Wt e Small Total Capacitance : Cp = 3.9 pF (Typ.) MAXIMUM RATINGS (Ta = 25C) 3s J | i cM |_| S CHARACTERISTIC SYMBOL | RATING | UNIT 3 eS Maximum (Peak) Reverse Voltage VRM 25 Vv | Reverse Voltage VR 20 Vv Maximum (Peak) Forward Current Irom 100 (*) | mA , ANODE? Average Forward Current Io 50 (*) | mA 3. CATHODE2 Surge Current (10ms) IFsoM 1 (*) A USQ 4. CATHODE! Power Dissipation P 100 mW JEDEC _ Junction Temperature Tj 125 C EIAJ _ Storage Temperature Range Tstg 55~125 Cc TOSHIBA 12U1A (*) Unit Rating. Total Rating = Unit Rating x 1.5 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT VF(1) |Ip=1mA 0.33 | Forward Voltage VRF(2) |Ir=5mA 0.38 | Vv VF(3) |Irp = 50mA 0.50 | 0.55 Reverse Current IR(1) |VR=20V 0.5 | vA Total Capacitance Cy VR = 0, f= 1 MHz 3.9 | 5.0 | pF PIN ASSIGNMENT (TOP VIEW) MARKING i M a a AZ eRt UW Uu O ol 961001EAA1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION oar others. @ The information contained herein is subject to change without notice. 1999-02-17 1/2TOSHIBA 188402 (A) Tp FORWARD CURRENT TOTAL CAPACITANCE Cr (pF) 100m Ip VF Ta = 100C 10m lm 100 10u lu 0.1 0.01 75C 50C 25C 0.03 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) CT VR f=1MHz Ta = 25C 0.1 0.3 1 3 10 REVERSE VOLTAGE VR (V) 30 REVERSE CURRENT Ip (A) POWER DISSIPATION P (mW) IR VR Ta = 100C 75C 50C 25C 0 4 8 12 16 20 24 REVERSE VOLTAGE VR (V) P Ta 140 120 100 80 60 40 20 0 25 50 15 100 125 150 AMBIENT TEMPERATURE Ta (C) 1999-02-17 2/2