TIC263 SERIES SILICON TRIACS High Current Triacs 25 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 175 A Peak Current Max IGT of 50 mA (Quadrants 1 - 3) SOT-93 PACKAGE (TOP VIEW) MT1 1 MT2 2 G 3 Pin 2 is in electrical contact with the mounting base. MDC2ADA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE TIC263D E T E L O S B O TIC263M Repetitive peak off-state voltage (see Note 1) TIC263S 600 VDRM V 700 TIC263N Full-cycle RMS on-state current at (or below) 60C case temperature (see Note 2) UNIT 400 800 IT(RMS) 25 A Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3) ITSM 175 A Peak gate current IGM 1 A Operating case temperature range TC -40 to +110 C Storage temperature range Tstg -40 to +125 C TL 230 C Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60C derate linearly to 110C case temperature at the rate of 500mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25C case temperature (unless otherwise noted ) PARAMETER IDRM IGT VGT VT TEST CONDITIONS Repetitive peak off-state current MIN VD = Rated VDRM IG = 0 TC = 110C TYP MAX UNIT 2 mA Vsupply = +12 V RL = 10 tp(g) > 20 s 15 50 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -30 -50 current Vsupply = -12 V RL = 10 tp(g) > 20 s -20 -50 Vsupply = -12 V RL = 10 tp(g) > 20 s 32 Vsupply = +12 V RL = 10 tp(g) > 20 s 0.8 2 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -0.8 -2 voltage Vsupply = -12 V RL = 10 tp(g) > 20 s -0.8 -2 On-state voltage Vsupply = -12 V RL = 10 tp(g) > 20 s 0.8 2 IT = 35.2 A IG = 50 mA (see Note 4) 1.5 1.7 mA V V All voltages are with respect to Main Terminal 1. NOTE 4: This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC263 SERIES SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS IH Holding current IL Latching current di/dt Init' IT = 100 mA 20 40 Vsupply = -12 V IG = 0 Init' IT = -100 mA -10 -40 MIN VD = Rated VD UNIT mA 20 (see Note 5) Vsupply = -12 V off-state voltage dv/dt(c) MAX IG = 0 Vsupply = +12 V Critical rate of rise of dv/dt TYP Vsupply = +12 V mA -20 IG = 0 TC = 110C Critical rise of VD = Rated VD TC = 80C commutation voltage di/dt = 0.5 IT(RMS)/ms IT = 1.4 IT(RMS) Critical rate of rise of VD = Rated VD on -state current diG/dt = 50 mA/s IGT = 50 mA TC = 110C 450 V/s 1 V/s 100 A/s All voltages are with respect to Main Terminal 1. NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN TYP E T E L O S B O MAX UNIT 1.52 C/W 36 C/W TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs IGT - Gate Trigger Current - mA 10 Vsupply IGTM + + + + 1 -60 -40 -20 VAA = 12 V 0 20 40 60 ALL QUADRANTS 1 VAA = 12 V RL = 10 tp(g) = 20 s tp(g) = 20 s 80 100 120 0.1 -60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - C Figure 2. 2 TC10AB 10 RL = 10 TC - Case Temperature - C Figure 1. CASE TEMPERATURE TC10AA VGT - Gate Trigger Voltage - V CASE TEMPERATURE 100 GATE TRIGGER VOLTAGE vs DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC263 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS HOLDING CURRENT vs LATCHING CURRENT vs CASE TEMPERATURE 1 Vsupply 100 E T E L O S B O 10 Vsupply IGTM + + - VAA = 12 V IG = 0 Initiating ITM = 100 mA + -40 -20 0 20 40 60 80 100 120 1 -60 -40 + + -20 0 20 40 VAA = 12 V 60 80 TC - Case Temperature - C TC - Case Temperature - C Figure 3. Figure 4. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TC10AE 1000 IL - Latching Current - mA IH - Holding Current - mA 10 0*1 -60 CASE TEMPERATURE TC10AD 100 100 120 3