Features
1 of 12
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (
or s
.
InP HBT
LDMOS
RF MEMS
FPD750SOT89E
LOW-NOISE HIGH-LINEARITY PACKAGED
pHEMT
The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomor-
phic High Electron Mobility Transistor (pHEMT). It features a 0.25Pmx1500Pm
Schottky barrier gate, defined by high-resolution stepper-based photolithography.
The double recessed gate structure minimizes parasitics to optimize performance.
The epitaxial structure is designed for improved linearity over a range of bias condi-
tions and input power levels.
25dBm Output Power (P1dB)
18dB Small-Signal Gain
(SSG)
0.6dB Noise Figure
39dBm OIP3
55% Power-Added Efficiency
FPD750SOT89CE: RoHS
Compliant (Directive
2002/95/EC)
Applications
Drivers or Output Stages in
PCS/Cellular Base Station
Transmitter Amplifiers
High Intercept-point LNAs
WLL, WLAN, and Other Types
of Wireless Infrastructure
Systems.
DS130509
9
Package Style: SOT89
FPD750SOT89
E Low-Noise
High-Linearity
Packaged
pHEMT
Parameter Specification Unit Condition
Min. Typ. Max.
P1dB Gain Compression 23 25 dBm VDS=5V, IDS =50% IDSS
Small-Signal Gain (SSG) 16.5 18 dB VDS=5V, IDS=50% IDSS
PAE 50 % VDS=5V, IDS=50% IDSS, POUT =P1dB
Noise Figure (NF) 0.8 1.0 dB VDS=5V, IDS=50%
0.6 dB VDS=5V, IDS=25%
OIP336 38 dBm VDS =5V, IDS=50% IDSS. Matched for optimal
power.
39 dBm Matched for best IP3
Saturated Drain-Source Current (IDSS) 185 230 280 mA VDS=1.3V, VGS =0V
Maximum Drain-Source Current
(IMAX)375 mA VDS =1.3V, VGS |+1V
Transconductance (GM) 200 ms VDS=1.3V, VGS =0V
Gate-Source Leakage Current (IGSO) 1 15 PAV
GS=-5V
Pinch-Off Voltage (VP) |0.7| |1.0| |1.3| V VDS=1.3V, IDS=0.75mA
Gate-Source Breakdown Voltage
(VBDGS)|12| |16| V IGS=0.75mA
Gate-Drain Breakdown Voltage
(VBDGD)|12| |16| V IGD=0.75mA
Thermal Resistivity (TJC) * 83 qC/W
*Note: TAMBIENT =22°C, RF specifications measured at f=1850MHz using CW signal (except as noted).