AP1203GMA Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 similar area footprint and pin assignment Low Gate Charge D Fast Switching Speed BVDSS 30V RDS(ON) 12m ID 47A RoHS Compliant G S D Description The APAK-5 package is preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S SS G APAK-5 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 47 A ID@TC=100 Continuous Drain Current, VGS @ 10V 30 A 120 A 37 W 0.29 W/ 29 mJ 24 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 4 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Value Units Max. 3.4 /W Max. 85 /W Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 200408053-1/4 AP1203GMA Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 30 - - V - 0.02 - V/ VGS=10V, ID=20A - - 12 m VGS=4.5V, ID=15A - - 25 m VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=10A - 25 - S VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=150 C) VDS=24V ,VGS=0V - - 250 uA Gate-Source Leakage VGS= 20V - - 100 nA ID=20A - 13 20 nC BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance gfs 2 o IDSS Drain-Source Leakage Current (T j=25 C) o IGSS 2 VGS=0V, ID=250uA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 3.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 8 - nC VDS=15V - 8 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=20A - 65 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 20 - ns tf Fall Time RD=0.75 - 5 - ns Ciss Input Capacitance VGS=0V - 1040 1660 pF Coss Output Capacitance VDS=25V - 240 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 165 - pF Rg Gate Resistance f=1.0MHz - 1.9 2.9 Min. Typ. IS=45A, VGS=0V - - 1.3 V IS=20A, VGS=0V, - 24 - ns dI/dt=100A/s - 14 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board. 4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25 2/4 AP1203GMA 100 100 o 10V 7.0V o T C =25 C 80 ID , Drain Current (A) 80 ID , Drain Current (A) 10V 7.0V T C =150 C 5.0V 60 4.5V 40 60 5.0V 4.5V 40 20 20 V G =3.0V V G =3.0V 0 0 0.0 2.0 4.0 6.0 0.0 Fig 1. Typical Output Characteristics 4.0 6.0 Fig 2. Typical Output Characteristics 30 1.6 I D =20A V G =10V I D = 15 A T C =25 Normalized RDS(ON) 25 RDS(ON) (m) 2.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 20 1.2 0.8 15 10 0.4 2 4 6 8 10 -50 V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 1.5 1.2 o Normalized VGS(th) (V) 15 o T j =150 C IS (A) 0 T j , Junction Temperature ( o C) T j =25 C 10 0.9 0.6 5 0.3 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP1203GMA f=1.0MHz 10000 12 V DS = 13 V V DS = 16 V V DS =20V 9 C (pF) VGS , Gate to Source Voltage (V) I D =20A 6 C iss 1000 3 C oss C rss 100 0 0 10 20 1 30 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 1000 ID (A) 100 100us 10 1ms o T C =25 C Single Pulse 10ms 100ms DC 1 0.1 1 10 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 100 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance 80 VG V DS =5V ID , Drain Current (A) 60 QG T j =25 o C T j =150 o C 4.5V 40 QGS QGD 20 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4