+
RIN
RG RF
VOUT
VIN
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
NE5532
,
NE5532A
,
SA5532
,
SA5532A
SLOS075J –NOVEMBER 1979–REVISED JANUARY 2015
NE5532x, SA5532x Dual Low-Noise Operational Amplifiers
1 Features 3 Description
The NE5532, NE5532A, SA5532, and SA5532A
1• Equivalent Input Noise Voltage: devices are high-performance operational amplifiers
5 nV/√Hz Typ at 1 kHz combining excellent DC and AC characteristics. They
• Unity-Gain Bandwidth: 10 MHz Typ feature very low noise, high output-drive capability,
• Common-Mode Rejection Ratio: 100 dB Typ high unity-gain and maximum-output-swing
bandwidths, low distortion, high slew rate, input-
• High DC Voltage Gain: 100 V/mV Typ protection diodes, and output short-circuit protection.
• Peak-to-Peak Output Voltage Swing 26 V Typ These operational amplifiers are compensated
With VCC± = ±15 V and RL= 600 Ωinternally for unity-gain operation. These devices
• High Slew Rate: 9 V/μs Typ have specified maximum limits for equivalent input
noise voltage.
2 Applications Device Information(1)
• AV Receivers PART NUMBER PACKAGE (PIN) BODY SIZE (NOM)
• Embedded PCs NE5532x, SA5532x SOIC (8) 4.90 mm × 3.91 mm
• Netbooks NE5532x, SA5532x PDIP (8) 9.81 mm × 6.35 mm
• Video Broadcasting and Infrastructure: Scalable NE5532x SO (8) 6.20 mm × 5.30 mm
Platforms (1) For all available packages, see the orderable addendum at
• DVD Recorders and Players the end of the data sheet.
• Multichannel Video Transcoders
• Pro Audio Mixers
4 Simplified Schematic
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
NE5532
,
NE5532A
,
SA5532
,
SA5532A
SLOS075J –NOVEMBER 1979–REVISED JANUARY 2015
www.ti.com
Table of Contents
8.2 Functional Block Diagram......................................... 7
1 Features.................................................................. 18.3 Feature Description................................................... 7
2 Applications ........................................................... 18.4 Device Functional Modes.......................................... 7
3 Description............................................................. 19 Application and Implementation .......................... 8
4 Simplified Schematic............................................. 19.1 Typical Application ................................................... 8
5 Revision History..................................................... 210 Power Supply Recommendations ..................... 11
6 Pin Configuration and Functions......................... 311 Layout................................................................... 11
7 Specifications......................................................... 411.1 Layout Guidelines ................................................. 11
7.1 Absolute Maximum Ratings ...................................... 411.2 Layout Example .................................................... 11
7.2 ESD Ratings.............................................................. 412 Device and Documentation Support................. 13
7.3 Recommended Operating Conditions....................... 412.1 Related Links ........................................................ 13
7.4 Thermal Information.................................................. 412.2 Trademarks........................................................... 13
7.5 Electrical Characteristics........................................... 512.3 Electrostatic Discharge Caution............................ 13
7.6 Operating Characteristics.......................................... 512.4 Glossary................................................................ 13
7.7 Typical Characteristics.............................................. 613 Mechanical, Packaging, and Orderable
8 Detailed Description.............................................. 7Information ........................................................... 13
8.1 Overview................................................................... 7
5 Revision History
Changes from Revision I (April 2009) to Revision J Page
• Added Applications,Device Information table, Pin Functions table, ESD Ratings table, Thermal Information table,
Typical Characteristics,Feature Description section, Device Functional Modes,Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section.................................................................................................. 1
• Deleted Ordering Information table. ....................................................................................................................................... 1
2Submit Documentation Feedback Copyright © 1979–2015, Texas Instruments Incorporated
Product Folder Links: NE5532 NE5532A SA5532 SA5532A
1
2
3
45
6
7
8
2IN+
2IN–
2OUT
VCC+
VCC–
1IN+
1IN–
1OUT
NE5532, NE5532A . . . D, P, OR PS PACKAGE
SA5532, SA5532A . . . D OR P PACKAGE
(TOP VIEW)
NE5532
,
NE5532A
,
SA5532
,
SA5532A
www.ti.com
SLOS075J –NOVEMBER 1979–REVISED JANUARY 2015
6 Pin Configuration and Functions
Pin Functions
PIN TYPE DESCRIPTION
NAME NO.
1IN+ 3 I Noninverting input
1IN- 2 I Inverting Input
OUT1 1 O Output
2IN+ 5 I Noninverting input
2IN- 6 I Inverting Input
2OUT 7 O Output
VCC+ 8 — Positive Supply
VCC- 4 — Negative Supply
Copyright © 1979–2015, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: NE5532 NE5532A SA5532 SA5532A
NE5532
,
NE5532A
,
SA5532
,
SA5532A
SLOS075J –NOVEMBER 1979–REVISED JANUARY 2015
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC+ 0 22 V
VCC Supply voltage(2) VCC– –22 0 V
Input voltage, either input(2)(3) VCC– VCC+ V
Input current(4) –10 10 mA
Duration of output short circuit(5) Unlimited
TJOperating virtual-junction temperature 150 °C
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC–.
(3) The magnitude of the input voltage must never exceed the magnitude of the supply voltage.
(4) Excessive input current will flow if a differential input voltage in excess of approximately 0.6 V is applied between the inputs, unless
some limiting resistance is used.
(5) The output may be shorted to ground or either power supply. Temperature and/or supply voltages must be limited to ensure the
maximum dissipation rating is not exceeded.
7.2 ESD Ratings VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all 2000
pins(1)
V(ESD) Electrostatic discharge V
Charged device model (CDM), per JEDEC specification JESD22- 1000
C101, all pins(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions MIN MAX UNIT
VCC+ Supply voltage 5 15 V
VCC– Supply voltage –5 –15 V
NE5532, NE5532A 0 70
TAOperating free-air temperature °C
SA5532, SA5532A –40 85
7.4 Thermal Information NE5532, NE5532A, SA5532, and SA5532A
THERMAL METRIC(1) D P PS UNIT
8 PINS
RθJA Junction-to-ambient thermal resistance (2)(3) 97 85 95 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The package thermal impedance is calculated in accordance with JESD 51-7.
(3) Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD= (TJ(max) – TA) / θJA. Operating at the absolute maximum TJof 150°C can affect reliability.
4Submit Documentation Feedback Copyright © 1979–2015, Texas Instruments Incorporated
Product Folder Links: NE5532 NE5532A SA5532 SA5532A
NE5532
,
NE5532A
,
SA5532
,
SA5532A
www.ti.com
SLOS075J –NOVEMBER 1979–REVISED JANUARY 2015
7.5 Electrical Characteristics
VCC± = ±15 V, TA= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
TA= 25°C 0.5 4
VIO Input offset voltage VO= 0 mV
TA= Full range(2) 5
TA= 25°C 10 150
IIO Input offset current nA
TA= Full range(2) 200
TA= 25°C 200 800
IIB Input bias current nA
TA= Full range(2) 1000
VICR Common-mode input-voltage range ±12 ±13 V
VOPP Maximum peak-to-peak output-voltage swing RL≥600 Ω, VCC± = ±15 V 24 26 V
TA= 25°C 15 50
RL≥600 Ω, VO= ±10 V TA= Full range(2) 10
AVD Large-signal differential-voltage amplification V/mV
TA= 25°C 25 100
RL≥2 kΩ, VO±10 V TA= Full range(2) 15
Avd Small-signal differential-voltage amplification f = 10 kHz 2.2 V/mV
BOM Maximum output-swing bandwidth RL= 600 Ω, VO= ±10 V 140 kHz
B1Unity-gain bandwidth RL= 600 Ω, CL= 100 pF 10 MHz
riInput resistance 30 300 kΩ
zoOutput impedance AVD = 30 dB, RL= 600 Ω, f = 10 kHz 0.3 Ω
CMRR Common-mode rejection ratio VIC = VICR min 70 100 dB
kSVR Supply-voltage rejection ratio (ΔVCC±/ΔVIO) VCC± = ±9 V to ±15 V, VO= 0 80 100 dB
IOS Output short-circuit current 10 38 60 mA
ICC Total supply current VO= 0, No load 8 16 mA
Crosstalk attenuation (VO1/VO2) V01 = 10 V peak, f = 1 kHz 110 dB
(1) All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
(2) Full temperature ranges are: –40°C to 85°C for the SA5532 and SA5532A devices, and 0°C to 70°C for the NE5532 and NE5532A
devices.
7.6 Operating Characteristics
VCC± = ±15 V, TA= 25°C (unless otherwise noted) NE5532, SA5532 NE5532A, SA5532A
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX
SR Slew rate at unity gain 9 9 V/μs
VI= 100 mV,
RL= 600 Ω,
Overshoot factor 10 10 %
AVD = 1,
CL= 100 pF
f = 30 Hz 8 8 10
VnEquivalent input noise voltage nV/√Hz
f = 1 kHz 5 5 6
f = 30 Hz 2.7 2.7
InEquivalent input noise current pA/√Hz
f = 1 kHz 0.7 0.7
Copyright © 1979–2015, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: NE5532 NE5532A SA5532 SA5532A
Temperature (C)
Output Swing Bandwidth (kHz)
-40 -20 0 20 40 60 80 100
0
20
40
60
80
100
120
140
160
180
D003
Frequency (Hz)
Equivalent input noise Voltage (nV)
10 100 1000 10000 100000
0
2
4
6
8
10
12
14
16
18
D001
NE5532
,
NE5532A
,
SA5532
,
SA5532A
SLOS075J –NOVEMBER 1979–REVISED JANUARY 2015
www.ti.com
7.7 Typical Characteristics
Figure 1. Equivalent Input Noise Voltage vs Frequency Figure 2. Equivalent Input Noise Current vs Frequency
Figure 3. Output Swing Bandwidth
vs Temperature at VCC = ±10 V
6Submit Documentation Feedback Copyright © 1979–2015, Texas Instruments Incorporated
Product Folder Links: NE5532 NE5532A SA5532 SA5532A
OUT
VCC–
VCC+
36 pF
37 pF
14 pF
7 pF
15 W
460 W
15 W
IN+
IN–
Component values shown are nominal.
NE5532
,
NE5532A
,
SA5532
,
SA5532A
www.ti.com
SLOS075J –NOVEMBER 1979–REVISED JANUARY 2015
8 Detailed Description
8.1 Overview
The NE5532, NE5532A, SA5532, and SA5532A devices are high-performance operational amplifiers combining
excellent dc and ac characteristics. They feature very low noise, high output-drive capability, high unity-gain and
maximum-output-swing bandwidths, low distortion, high slew rate, input-protection diodes, and output short-
circuit protection. These operational amplifiers are compensated internally for unity-gain operation. These
devices have specified maximum limits for equivalent input noise voltage.
8.2 Functional Block Diagram
8.3 Feature Description
8.3.1 Unity-Gain Bandwidth
The unity-gain bandwidth is the frequency up to which an amplifier with a unity gain may be operated without
greatly distorting the signal. The NE5532, NE5532A, SA5532, and SA5532A devices have a 10-MHz unity-gain
bandwidth.
8.3.2 Common-Mode Rejection Ratio
The common-mode rejection ratio (CMRR) of an amplifier is a measure of how well the device rejects unwanted
input signals common to both input leads. It is found by taking the ratio of the change in input offset voltage to
the change in the input voltage and converting to decibels. Ideally the CMRR would be infinite, but in practice,
amplifiers are designed to have it as high as possible. The CMRR of the NE5532, NE5532A, SA5532, and
SA5532A devices is 100 dB.
8.3.3 Slew Rate
The slew rate is the rate at which an operational amplifier can change its output when there is a change on the
input. The NE5532, NE5532A, SA5532, and SA5532A devices have a 9-V/ms slew rate.
8.4 Device Functional Modes
The NE5532, NE5532A, SA5532, and SA5532A devices are powered on when the supply is connected. Each of
these devices can be operated as a single supply operational amplifier or dual supply amplifier depending on the
application.
Copyright © 1979–2015, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Links: NE5532 NE5532A SA5532 SA5532A
R3
R1
R2
R4
15 V
VREF
12 V
+
+
VIN
+
VDIFF
±
VOUT-
VOUT+
NE5532
,
NE5532A
,
SA5532
,
SA5532A
SLOS075J –NOVEMBER 1979–REVISED JANUARY 2015
www.ti.com
9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Typical Application
Some applications require differential signals. Figure 4 shows a simple circuit to convert a single-ended input of 2
V to 10 V into differential output of ±8 V on a single 15-V supply. The output range is intentionally limited to
maximize linearity. The circuit is composed of two amplifiers. One amplifier acts as a buffer and creates a
voltage, VOUT+. The second amplifier inverts the input and adds a reference voltage to generate VOUT–. Both
VOUT+ and VOUT– range from 2 V to 10 V. The difference, VDIFF, is the difference between VOUT+ and VOUT–.
Figure 4. Schematic for Single-Ended Input to Differential Output Conversion
9.1.1 Design Requirements
The design requirements are as follows:
• Supply voltage: 15 V
• Reference voltage: 12V
• Input: 2 V to 10 V
• Output differential: ±8 V
8Submit Documentation Feedback Copyright © 1979–2015, Texas Instruments Incorporated
Product Folder Links: NE5532 NE5532A SA5532 SA5532A
OUT OUT
cm REF
V V 1
V V
2 2
+ -
+
æ ö
= =
ç ÷
è ø
2 4 2
D IF F O U T O U T IN R E F
1 3 4 1
R R R
V V V V 1 V 1
R R R R
+ -
æ ö
æ ö æ ö
= - = ´ + - ´ +
ç ÷
ç ÷ ç ÷
+
è ø è ø
è ø
4 2 2
out ref in
3 4 1 1
R R R
V V 1 V
R R R R
-æ ö æ ö
= ´ ´ + - ´
ç ÷ ç ÷
+è ø
è ø
NE5532
,
NE5532A
,
SA5532
,
SA5532A
www.ti.com
SLOS075J –NOVEMBER 1979–REVISED JANUARY 2015
Typical Application (continued)
9.1.2 Detailed Design Procedure
The circuit in Figure 4 takes a single-ended input signal, VIN, and generates two output signals, VOUT+ and VOUT–
using two amplifiers and a reference voltage, VREF. VOUT+ is the output of the first amplifier and is a buffered
version of the input signal, VIN Equation 1. VOUT– is the output of the second amplifier which uses VREF to add an
offset voltage to VIN and feedback to add inverting gain. The transfer function for VOUT– is Equation 2.
VOUT+ = VIN (1)
(2)
The differential output signal, VDIFF, is the difference between the two single-ended output signals, VOUT+ and
VOUT–.Equation 3 shows the transfer function for VDIFF. By applying the conditions that R1= R2and R3= R4, the
transfer function is simplified into Equation 6. Using this configuration, the maximum input signal is equal to the
reference voltage and the maximum output of each amplifier is equal to the VREF. The differential output range is
2×VREF. Furthermore, the common mode voltage will be one half of VREF (see Equation 7).
(3)
VOUT+ = VIN (4)
VOUT– = VREF – VIN (5)
VDIFF = 2×VIN – VREF (6)
(7)
9.1.2.1 Amplifier Selection
Linearity over the input range is key for good dc accuracy. The common mode input range and the output swing
limitations determine the linearity. In general, an amplifier with rail-to-rail input and output swing is required.
Bandwidth is a key concern for this design. Since the NE5532 has a bandwidth of 10 MHz, this circuit will only be
able to process signals with frequencies of less than 10 MHz.
9.1.2.2 Passive Component Selection
Because the transfer function of VOUT– is heavily reliant on resistors (R1, R2, R3, and R4), use resistors with low
tolerances to maximize performance and minimize error. This design used resistors with resistance values of 36
kΩwith tolerances measured to be within 2%. But, if the noise of the system is a key parameter, the user can
select smaller resistance values (6 kΩor lower) to keep the overall system noise low. This ensures that the noise
from the resistors is lower than the amplifier noise.
9.1.3 Application Curves
The measured transfer functions in Figure 5,Figure 6, and Figure 7 were generated by sweeping the input
voltage from 0 V to 12V. However, this design should only be used between 2 V and 10 V for optimum linearity.
Copyright © 1979–2015, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Links: NE5532 NE5532A SA5532 SA5532A
0
2
4
6
8
10
12
0 1 2 3 4 5 6 7 8 9 10 11 12
VOUTt (V)
VIN (V)
C002
±12
±8
±4
0
4
8
12
0 1 2 3 4 5 6 7 8 9 10 11 12
VDIFF (V)
VIN (V)
C003
0
2
4
6
8
10
12
0 1 2 3 4 5 6 7 8 9 10 11 12
VOUT+ (V)
VIN (V)
C001
NE5532
,
NE5532A
,
SA5532
,
SA5532A
SLOS075J –NOVEMBER 1979–REVISED JANUARY 2015
www.ti.com
Typical Application (continued)
Figure 5. Differential Output Voltage vs Input Voltage Figure 6. Positive Output Voltage Node vs Input Voltage
Figure 7. Positive Output Voltage Node vs Input Voltage
10 Submit Documentation Feedback Copyright © 1979–2015, Texas Instruments Incorporated
Product Folder Links: NE5532 NE5532A SA5532 SA5532A
+
RIN
RG RF
VOUT
VIN
NE5532
,
NE5532A
,
SA5532
,
SA5532A
www.ti.com
SLOS075J –NOVEMBER 1979–REVISED JANUARY 2015
10 Power Supply Recommendations
The NE5532x and SA5532x devices are specified for operation over the range of ±5 to ±15 V; many
specifications apply from 0°C to 70°C (NE5532x) and -40°C to 85°C (SA5532x). The Typical Characteristics
section presents parameters that can exhibit significant variance with regard to operating voltage or temperature.
CAUTION
Supply voltages outside of the ±22 V range can permanently damage the device (see
the Absolute Maximum Ratings).
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high
impedance power supplies. For more detailed information on bypass capacitor placement, refer to the Layout
Guidelines.
11 Layout
11.1 Layout Guidelines
For best operational performance of the device, use good PCB layout practices, including:
• Noise can propagate into analog circuitry through the power pins of the circuit as a whole and the operational
amplifier. Bypass capacitors are used to reduce the coupled noise by providing low impedance power
sources local to the analog circuitry.
– Connect low-ESR, 0.1-μF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single
supply applications.
• Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital
and analog grounds, paying attention to the flow of the ground current. For more detailed information, refer to
Circuit Board Layout Techniques, SLOA089.
• To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If
it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular as
opposed to in parallel with the noisy trace.
• Place the external components as close to the device as possible. Keeping RF and RG close to the inverting
input minimizes parasitic capacitance, as shown in Layout Example.
• Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
• Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce
leakage currents from nearby traces that are at different potentials.
11.2 Layout Example
Figure 8. Operational Amplifier Schematic for Noninverting Configuration
Copyright © 1979–2015, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Links: NE5532 NE5532A SA5532 SA5532A
OUT1
OUT2
IN1í
IN1+
VCCí
VCC+
IN2í
IN2+
RG
RIN
RF
GND
VIN
VS-GND
VS+
GND
Run the input traces as far
away from the supply lines
as possible
Only needed for
dual-supply
operation
Place components close to
device and to each other to
reduce parasitic errors
Use low-ESR, ceramic
bypass capacitor
(or GND for single supply) Ground (GND) plane on another layer
NE5532
,
NE5532A
,
SA5532
,
SA5532A
SLOS075J –NOVEMBER 1979–REVISED JANUARY 2015
www.ti.com
Layout Example (continued)
Figure 9. Operational Amplifier Board Layout for Noninverting Configuration
12 Submit Documentation Feedback Copyright © 1979–2015, Texas Instruments Incorporated
Product Folder Links: NE5532 NE5532A SA5532 SA5532A
NE5532
,
NE5532A
,
SA5532
,
SA5532A
www.ti.com
SLOS075J –NOVEMBER 1979–REVISED JANUARY 2015
12 Device and Documentation Support
12.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links
Technical Support &
Parts Product Folder Sample & Buy Tools & Software
Documents Community
NE5532 Click here Click here Click here Click here Click here
NE5532A Click here Click here Click here Click here Click here
SA5532 Click here Click here Click here Click here Click here
SA5532A Click here Click here Click here Click here Click here
12.2 Trademarks
All trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.4 Glossary
SLYZ022 —TI Glossary.
This glossary lists and explains terms, acronyms and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser based versions of this data sheet, refer to the left hand navigation.
Copyright © 1979–2015, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Links: NE5532 NE5532A SA5532 SA5532A
PACKAGE OPTION ADDENDUM
www.ti.com 24-Aug-2018
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
NE5532AD ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 N5532A
NE5532ADR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 N5532A
NE5532ADRE4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 N5532A
NE5532ADRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 N5532A
NE5532AP ACTIVE PDIP P 8 50 Green (RoHS
& no Sb/Br) CU NIPDAU N / A for Pkg Type 0 to 70 NE5532AP
NE5532APE4 ACTIVE PDIP P 8 50 Green (RoHS
& no Sb/Br) CU NIPDAU N / A for Pkg Type 0 to 70 NE5532AP
NE5532APSR ACTIVE SO PS 8 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 N5532A
NE5532APSRE4 ACTIVE SO PS 8 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 N5532A
NE5532D ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 N5532
NE5532DR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU | CU SN Level-1-260C-UNLIM 0 to 70 N5532
NE5532DRE4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 N5532
NE5532DRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 N5532
NE5532P ACTIVE PDIP P 8 50 Pb-Free
(RoHS) CU NIPDAU | CU SN N / A for Pkg Type 0 to 70 NE5532P
NE5532PE4 ACTIVE PDIP P 8 50 Pb-Free
(RoHS) CU NIPDAU N / A for Pkg Type 0 to 70 NE5532P
NE5532PSR ACTIVE SO PS 8 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 N5532
SA5532AD ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 SA5532A
SA5532ADG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 SA5532A
PACKAGE OPTION ADDENDUM
www.ti.com 24-Aug-2018
Addendum-Page 2
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
SA5532ADR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 SA5532A
SA5532AP ACTIVE PDIP P 8 50 Green (RoHS
& no Sb/Br) CU NIPDAU N / A for Pkg Type -40 to 85 SA5532AP
SA5532APE4 ACTIVE PDIP P 8 50 Green (RoHS
& no Sb/Br) CU NIPDAU N / A for Pkg Type -40 to 85 SA5532AP
SA5532D ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 SA5532
SA5532DR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 SA5532
SA5532P ACTIVE PDIP P 8 50 Green (RoHS
& no Sb/Br) CU NIPDAU N / A for Pkg Type -40 to 85 SA5532P
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
PACKAGE OPTION ADDENDUM
www.ti.com 24-Aug-2018
Addendum-Page 3
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
NE5532ADR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
NE5532APSR SO PS 8 2000 330.0 16.4 8.2 6.6 2.5 12.0 16.0 Q1
NE5532DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
NE5532DRG4 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
NE5532PSR SO PS 8 2000 330.0 16.4 8.2 6.6 2.5 12.0 16.0 Q1
SA5532ADR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
SA5532DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 17-Aug-2018
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
NE5532ADR SOIC D 8 2500 340.5 338.1 20.6
NE5532APSR SO PS 8 2000 367.0 367.0 38.0
NE5532DR SOIC D 8 2500 340.5 338.1 20.6
NE5532DRG4 SOIC D 8 2500 340.5 338.1 20.6
NE5532PSR SO PS 8 2000 367.0 367.0 38.0
SA5532ADR SOIC D 8 2500 340.5 338.1 20.6
SA5532DR SOIC D 8 2500 340.5 338.1 20.6
PACKAGE MATERIALS INFORMATION
www.ti.com 17-Aug-2018
Pack Materials-Page 2