Si photodiode
S8551, S8552, S8553
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
Cat. No. KSPD1050E02
Jul. 2002 DN
2
CONVENTIONAL TYPE
RELATIVE SENSITIVITY (%)
NUMBER OF SHOT
[Typ. ArF excimer laser, 0.1 mJ/cm
2
/pulse, f=100 Hz, λ=193 nm, pulse width=15 ns (FWHM)]
5 × 10
6
0
1 × 10
7
40
20
60
80
100
120
S8551, S8552, S8553
CASE
2.9
(15.0)
5.0 ± 0.2
1.4
ANODE TERMINAL MARK
PHOTOSENSITIVE
SURFACE
CAP WITHOUT WINDOW
0.5 MAX.
LEAD
13.9 ± 0.2
12.35 ± 0.1
10.5 ± 0.1
0.45
7.5 ± 0.2
1.0 MAX.
ACTIVE AREA
5.8 × 5.8
ANODE TERMINAL
MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
16.5 ± 0.2
15.0 ± 0.15
2.15 ± 0.1
10.5
0.75
0.3
15.1 ± 0.3
12.5 ± 0.2
13.7 ± 0.3
ACTIVE AREA
10 × 10
PHOTOSENSITIVE
SURFACE
18.0
3.4
25.5
18.0
25.5
10 2.54
1.1
5.0
1.75
+0
-0.6
+0
-0.6
0.45
LEAD
WHITE CERAMIC
ACTIVE AREA
18 × 18
S8551
S8552 S8553
■ Variation in sensitivity due to VUV exposure ■ Dimensional outlines (unit: mm)
KSPDA0142EA
KSPDB0188EB
KSPDA0143EA KSPDA0144EA