CPV362M4UPbF
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IGBT SIP Module
(Fast IGBT)
FEATURES
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
•HEXFRED
® soft ultrafast diodes
• Optimized for high speed, see fig. 1 for current vs.
frequency curve
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
Notes
(1) Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2) VCC = 80 % (VGES), VGE = 20 V, L = 10 μH, RG = 50 (see fig.19)
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
VCES 600 V
IRMS per phase (3.1 kW total)
with TC = 90 °C 4.6 ARMS
TJ125 °C
Supply voltage 360 VDC
Power factor 0.8
Modulation depth (see fig. 1) 115 %
VCE(on) (typical)
at IC = 3.9 A, 25 °C 1.7 V
Speed 8 kHz to 30 kHz
Package SIP
Circuit Three phase inverter
IMS-2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 600 V
Continuous collector current, each IGBT IC
TC = 25 °C 7.2
A
TC = 100 °C 3.9
Pulsed collector current ICM (1)
22
Clamped inductive load current ILM (2)
Diode continuous forward current IFTC = 100 °C 3.4
Diode maximum forward current IFM 22
Gate to emitter voltage VGE ± 20 V
Isolation voltage VISOL 1 minute, any terminal to case 2500 VRMS
Maximum power dissipation, each IGBT PD
TC = 25 °C 23
W
TC = 100 °C 9.1
Operating junction and storage temperature range TJ, TStg -40 to +150
°C
Soldering temperature 10 s, (0.063" (1.6 mm) from case) 300
Mounting torque 6-32 or M3 screw 5 to 7
(0.55 to 0.8)
lbf · in
(N · m)
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Notes
(1) Pulse width 80 μs; duty factor 0.1 %
(2) Pulse width 5.0 μs, single shot
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case, each IGBT, one IGBT in conduction RthJC (IGBT) - 5.5
°C/WJunction to case, each DIODE, one DIODE on conduction RthJC (DIODE) - 9.0
Case to sink, flat, greased surface RthCS (MODULE) 0.1 -
Weight of module
20 g
0.7 oz.
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V(VB)CES (1) VGE = 0 V, IC = 250 μA 600 - - V
Temperature coefficient of
breakdown voltage V(BR)CES/TJVGE = 0 V, IC = 1 mA - 0.63 - V/°C
Collector to emitter saturation voltage VCE(on)
IC = 3.9 A
VGE = 15 V
See fig. 2, 5
- 1.70 2.2
V
IC = 7.2 A - 1.95 -
IC = 3.9 A, TJ = 150 °C - 1.70 -
Gate threshold voltage VGE(th)
VCE = VGE, IC = 250 μA
3.0 - 6.0
Temperature coefficient of
threshold voltage VGE(th)/TJ--11-mV/°C
Forward transconductance gfe (2) VCE = 100 V, IC = 6.5 A 1.4 4.3 - S
Zero gate voltage collector current ICES
VGE = 0 V, VCE = 600 V - - 250
μA
VGE = 0 V, VCE = 600 V, TJ = 150 °C - - 2500
Diode forward voltage drop VFM
IC = 8.0 A
See fig. 13
-1.41.7
V
IC = 8.0 A, TJ = 150 °C - 1.3 1.6
Gate to emittler leakage current IGES VGE = ± 20 V - - ± 100 nA
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SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) OgIC = 3.9 A
VCC = 400 V
VGE = 15 V
-3147
nCGate to emitter charge (turn-on) OGE -5.07.5
Gate to collector charge (turn-on) Ogc -1320
Turn-on delay time td(on)
TJ = 25 °C
IC = 3.9 A, VCC = 480 V
VGE = 15 V, RG = 50 
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
-45-
ns
Rise time tr-22-
Turn-off delay time td(off) - 100 160
Fall time tf- 120 180
Turn-on switching loss Eon -0.13-
mJTurn-off switching loss Eoff -0.07-
Total switching loss Ets - 0.20 0.3
Turn-on delay time td(on)
TJ = 150 °C
IC = 3.9 A, VCC = 480 V
VGE = 15 V, RG = 50 
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
-42-
ns
Rise time tr-22-
Turn-off delay time td(off) - 120 -
Fall time tf- 250 -
Total switching loss Ets -0.35- mJ
Input capacitance Cies VGE = 0 V
VCC = 30 V
= 1.0 MHz
See fig. 7
- 530 -
pFOutput capacitance Coes -39-
Reverse transfer capacitance Cres -7.4-
Diode reverse recovery time trr
TJ = 25 °C
See fig. 14
IF = 8.0 A
VR = 200 V
dI/dt = 200
A/μs
-3755
ns
TJ = 125 °C - 55 90
Diode peak reverse recovery current Irr
TJ = 25 °C
See fig. 15
-3.55.0
A
TJ = 125 °C - 4.5 8.0
Diode reverse recovery charge Qrr
TJ = 25 °C
See fig. 16
- 65 138
nC
TJ = 125 °C - 124 360
Diode peak rate of fall of
recovery during tbdI(rec)M/dt
TJ = 25 °C
See fig. 17
- 240 -
A/μs
TJ = 125 °C - 210 -
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
0.1 1 10 100
0
1
2
3
4
5
6
7
8
f, Frequency (KHz)
LOAD CURRENT (A)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
0.00
0.29
0.59
0.88
1.17
1.46
1.76
Total Output Power (kW)
2.05
2.34
0.1
1
10
100
0111.0
CE
C
I , Collector-to-Emitter Current (A)
V , Collector-to-Emitter Voltage (V)
T = 150°C
T = 25°C
J
J
V = 15V
20μs PULSE WIDTH
GE
A
0.1
1
10
100
46810
C
I , Collector-to-Emitter Current (A)
GE
T = 25°C
T = 150°C
J
J
V , Gate-to-Emitter Voltage (V)
A
V = 10V
5μs PULSE WIDTH
CC
25 50 75 100 125 150
0
2
3
5
6
8
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C°
-60 -40 -20 020 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A1.95
C
I = A3.9
C
I = A7.8
C
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs.
Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
12
JDM
thJC
C
0
200
400
600
800
1000
001011
CE
C, Capacitance (pF)
V , Collector-to-Emitter Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C
ies
C
res
C
oes
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 3.9A
CC
C
010 20 30 40 50
0.15
0.16
0.17
0.18
0.19
0.20
R , Gate Resistance
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 3.9A
CC
GE
J
C
°
(Ω)
-60 -40 -20 020 40 60 80 100 120 140 160
0.1
1
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J°
R = 50
V = 15V
V = 480V
G
GE
CC
I = A
7.8
C
I = A
3.9
C
I = A
1.95
C
Ω
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Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 12 - Turn-Off SOA
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
0 2 4 6 8
0.0
0.2
0.3
0.5
0.6
0.8
I , Collector-to-emitter Current (A)
Total Switching Losses (mJ)
C
R = 50
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
Ω
0.1
1
10
100
1 10 100 1000
V = 20V
T = 125 C
GE
J
o
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
SAFE OPERATING AREA
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Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 15 - Typical Recovery Current vs. dIF/dt
Fig. 16 - Typical Stored Charge vs. dIF/dt
Fig. 17 - Typical dI(rec)M/dt vs. dIF/dt
0
20
40
60
80
100
0001001
f
di /dt - (A/μs)
t - (ns)
rr
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
0001001
f
di /dt - (A/μs)
I - (A)
IRRM
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
100
200
300
400
500
0001001
f
di /dt - (A/μs)
RR
Q - (nC)
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
100
1000
10000
0001001
f
di /dt - (A/μs)
di(rec)M/dt - (A/μs)
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
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Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a,
Defining Eoff, td(off), tf
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Fig. 18e - Macro Waveforms for Fig. 18a´s Test Circuit
Same type
device as
D.U.T.
D.U.T.
430 µF
80 %
of VCE
t1
Ic
Vce
t1 t2
90% Ic
td(off) tf
Ic
5% Ic
t1+5μS
Vce ic dt
90% Vge
+Vge
∫
Eoff =
Vce Ic dt
10% Vce
∫
Vce ie dt
t2
t1
5% Vce
Ic
Ipk
Vcc 10% Ic
Vce
t1 t2
DUT VOLTAGE
AND CURRENT
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
90% Ic
tr
td(on)
Eon =
Vce Ie dt
DIODE REVERSE
RECOVERY ENERGY
tx
∫
Erec =
t4
t3
t4
t3
DIODE RECOVERY
WAVEFORMS
Ic
Vpk
10% Vcc
Irr
10% Irr
Vcc
trr
∫
Qrr =
trr
tx
id dt
Vd Id dt
Id dt
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0 t1 t2
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Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit
CIRCUIT CONFIGURATION
D.U.T.
V *
c
50V
L
1000V
6000μF
100V
RL=480V
4 X IC @25°C
0 - 480V
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95066
3
618
15
41016
9
12
71319
Q1
Q2
Q3D1
D2
D3
D4
D5
D6Q4
Q5
Q6
1
Document Number: 95066 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 30-Jul-07 1
IMS-2 (SIP)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Notes
(1) Tolerance uless otherwise specified ± 0.254 mm (0.010")
(2) Controlling dimension: inch
(3) Terminal numbers are shown for reference only
IMS-2 Package Outline (13 Pins)
7.87 (0.310)
5.46 (0.215)
1.27 (0.050)
6.10 (0.240)
3.05 ± 0.38
(0.120 ± 0.015)
0.51 (0.020)
0.38 (0.015)
62.43 (2.458)
53.85 (2.120)
Ø 3.91 (0.154)
2 x
21.97 (0.865)
3.94 (0.155)
4.06 ± 0.51
(0.160 ± 0.020)
5.08 (0.200)
6 x
1.27 (0.050)
13 x
2.54 (0.100)
6 x 0.76 (0.030)
13 x
1 3 4 6 7 9 10 12 13 15 16 18 19171411258
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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