HARRIS SEMICOND SECTOR Gy FARRIS SEMICONDUCTOR 1N5624, 1N5625 1N5626, 1N5627 December 1993 3A, 200V - 800V Diodes Features Package e High Temperature Metallurgically Bbonded, No Com- AL-3 pression Contacts as Found in Diode-Constructed TOP VIEW Rectifiers Glass Passivated Junction * 3A Operation at T, +70C with No Thermal Runaway Low Reverse Leakage Current Exceeds Environmental Standard of MIL-STD-19500 Hermetically Seated Package * High Temperature Soldering: 350 C/10s/0.375 In. (9.5mm) Lead Length Description The 1N5624, 1N5625, 1N5626, and 1N5627 are glass-pas- sivated transient voltage protected, silicon rectifiers intended for general-purpose applications. These rectifiers will dissipate up to 800 watts in reverse direction without damage. Voltage transients generated by household or industrial power lines are dissipated. These rectifiers are supplied in a AL-3 package. ANODE J CATHODE Symbol Maximum AMS Input (Supply) Voltage Maximum Average Forward Current (Note 2) Maximum Peak Surge Forward Current (Note 2) NOTES: 1. For capacitive load derate current by 20%. 2. in accordance with JEDEC registration format. Absolute Maximum Ratings For Single Phase, 60Hz, Half-Wave Resistive or Inductive Loads (Note 1) Maximum Peak (Repetitive) Reverse Voltage (Note 2) ............. For Resistive or Inductive Loads. ....... 00.0 cece eee e cece ees Maximum DC Reverse (Blocking) Voltage (Note 2)............... For Resistive or Inductive Loads, Ty =+75C........-.---.000- For 8.3ms Half Sine Wave, Superimposed on Rated Load ........ Operating Junction Temperature (Note 2) ...... 6. eee eee Storage Temperatura (Note 2)... 6. ec eect cree cen cane 1N5624 1N5625 1N5626 1N5627 UNITS Varm _-200 400 600 800 Vv Vaus 140 280 420 560 Vv Vane) 200 400 600 800 v weed 3 3 3 3 A elegy 125 125 125 125 A see Ty 65104175 -65to+175 -6510+175 -65t0+175 C Tstq 65 to +200 -6510+200 -651to+200 -65t0+200 C CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. 4-9 Copyright Harris Corporation 1993 File Number 2181.1 BSE D MM 4302271 0050305 123 MBHAS GENERAL PURPOSE DIODESHARRIS SEMICOND SECTOR BBE D WB 4302271 OO50306 O&T MBHAS Specifications 1N5624, 1N5625, 1N5626, 1N5627 Electrical Specifications T, = +25C, Unless Otherwise Specified LIMITS FOR ALL TYPES PARAMETERS SYMBOL MIN TYP MAX UNITS Maximum instantaneous Forward-Voltage Drop (Note 1) At 3A, Ty = +25C Ve - : 1.0 Vv At 3A, Ts = +70C Ve - - 0.95 v Maximum Full-Load Reverse Current (Note 1) At Average Full-Cycle, Lead Length = 0.375 in. (9.5mm) In - - 150 HA Ta = +70C (Note 2) Maximum Reverse Current (Note 1) At Maximum DC Reverse (Blocking) Voltage, Ty = +25C la : . 5 pA At Maximum OC Reverse (Blocking) Voltage, Ty = +175C la . . 300 pA (Note 3) Typical Junction Capacitance Cy - 40 - pF At Frequency = 1MHz and Applied Reverse Voltage = 4V NOTES: 1. In accordance with JEDEC registration format. 2. 100A for 1N5626 and 1N5627, 3. 200A for 1N5624 and 1N5625. Typical Performance Curves _ 4 200 = oc 2 5 - Ty = 425C i E 8.3MS SINGLE HALF = 3 as 100 SINE-WAVE 5 ae JEDEC METHOD 2 8 : es 6 2 DN 3o a fe w N\ 2< g SINGLE-PHASE eZ a HALF-WAVE, 60Hz IN zo = 1 / RESISTIVE OR wi ie < INDUCTIVE LOAD N $ 0.375 (9.5MM) 2 z LEAD LENGTH = = [ tt 9 0 0 25 50 75 100 125 150 175 ' 10 100 T,, LEAD TEMPERATURE (C) N, NUMBER OF CYCLES AT 60Hz SINE WAVE FIGURE 1. MAXIMUM AVERAGE FORWARD OUTPUT FIGURE 2. MAXIMUM PEAK SURGE (NON-REPETITIVE) CURRENT CHARACTERISTIC FORWARD CURRENT CHARACTERISTIC 4-10HARRIS SEMICOND SECTOR b6E D MM 4302271 0050307 TTbh MHAS 1N5624, 1N5625, 1N5626, 1N5627 Typical Performance Curves (continued) 100 Ty = +25C 30 PULSE DURATION = 3008 DUTY FACTOR = 2% 10 3.0 1.0 0.3 Ty = 425C lp, FORWARD CURRENT (A) ip, REVERSE CURRENT (1A) 01 03 04 06 OF 08 09 10 44 #12 13 9 200 400 60 80 100120140 Vr, FORWARD VOLTAGE DROP (V) PERCENT OF PEAK REPETITIVE REVERSE VOLTAGE FIGURE 3. TYPICAL INSTANTANEOUS FORWARD CURRENT FIGURE 4. TYPICAL REVERSE LEAKAGE CURRENT CHARACTERISTIC CHARACTERISTICS C, CAPACITANCE (pF) GENERAL PURPOSE DIODES 1 10 100 Vp, CATHODE - ANODE VOLTAGE (V) FIGURE 5. TYPICAL JUNCTION CAPACITANCE CHARACTERISTIC