Industrial & Multimarket
Data Sheet
Rev. 2.1, 2010-03-11
Final
CoolMOS C6
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
drain
pin 2
gate
pin 1
source
pin 3
600V CoolMOS™ C6 Power Transistor IPD60R950C6, IPB60R950C6
IPP60R950C6, IPA60R950C6
FinalData Sheet 2 Rev. 2.1, 2010-03-11
1 Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. CoolMOS™ C6 series combines the
experience of the leading SJ MOSFET supplier with high class innova tion.
The resulting devices provide all benefits of a fast switching SJ MOSFET
while not sacrificing ease of use. Extremely low switching and conduction
losses make switching applications even more efficient, more compact,
lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC1)
• Pb-free plating , Halogen free mold compoun d
Applications
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,
Telecom and UPS.
Please note: For MO SFET par allelin g th e us e of fer rite be ads o n th e ga te
or separate totem poles is generally recommended.
1) J-STD20 and JESD22
Table 1 Key Performance Parameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 0.95
Qg,typ 13 nC
ID,pulse 12 A
Eoss @ 400V 1.3 µJ
Body diode di/dt500 A/µs
Type / Ordering Code Package Marking Related Links
IPD60R950C6 PG-TO252 IFX C6 Product Brief
IPB60R950C6 PG-TO263 IFX C6 Portfolio
IPP60R950C6 PG-TO220 6R950C6 IFX CoolMOS Webpage
IPA60R950C6 PG-TO220 FullPAK IFX Design tools
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Table of Contents
FinalData Sheet 3 Rev. 2.1, 2010-03-11
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical charact eristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table of Contents
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Maximum Ratings
FinalData Sheet 4 Rev. 2.1, 2010-03-11
2Maximum Ratings
at Tj = 25 °C, unless otherwise specified.
Table 2Maximum ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current1)
1) Limited by Tj,max. Maximum duty cycle D=0.75
ID- - 4.4 ATC= 25 °C
2.8 TC= 100°C
Pulsed drain current2)
2) Pulse width tp limited by Tj,max
ID,pulse - - 12 ATC=25 °C
Avalanche energy, single pulse EAS - - 46 mJ ID=0.8 A,VDD=50 V
(see table 21)
Avalanche energy, repetitive EAR - - 0.13 ID=0.8 A,VDD=50 V
Avalanche current, repetitive IAR - - 0.8 A
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V
Gate source voltage VGS -20 -20 Vstatic
-30 30 AC (f>1 Hz)
Power dissipation for
TO-220, TO-252, TO-263 Ptot - - 37 WTC=25 °C
Power dissipation for
TO-220 FullPAK Ptot - - 26 WTC=25 °C
Operating and storage temperature Tj,Tstg -55 -150 °C
Mounting torque
TO-220 - - 60 Ncm M3 and M3.5 screws
TO-220FP 50 M2.5 screws
Continuous diode forward current IS- - 3.9 ATC=25 °C
Diode pulse current2) IS,pulse - - 12 ATC=25 °C
Reverse diode dv/dt3)
3) Identical low side and high side switch with identical RG
dv/dt - - 15 V/ns VDS=0...480 V, ISD ID,
Tj=125 °C
Maximum diode commutation
speed3) dif/dt 500 A/µs (see table 22)
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Thermal characteristics
FinalData Sheet 5 Rev. 2.1, 2010-03-11
3 Thermal characteristics
Table 3 T herma l ch ara ct e ri st ic s TO -2 2 0 (IP P 60 R9 50C6 )
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 3.41 °C/W
Thermal resistance, junction -
ambient RthJA - - 62 leaded
Soldering temperature ,
wavesoldering only allowed at
leads
Tsold - - 260 °C 1.6 mm (0.063 in.)
from case for 10 s
Table 4 Thermal characteristics TO-220FullPAK (IPA60R950C6)
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Thermal resistance, junction - case RthJC --4.9°C/W
Thermal resistance, junction -
ambient RthJA - - 80 leaded
Soldering temperature ,
wavesoldering only allowed at
leads
Tsold - - 260 °C 1.6 mm (0.063 in.)
from case for 10 s
Table 5 Thermal characteristics TO-263 (IPB60R950C6),TO-252 (IPD60R950C6)
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 3.41 °C/W
Thermal resistance, junction -
ambient RthJA - - 62 SMD version, device
on PCB, minimal
footprint
35 SMD version, device
on PCB, 6cm2 cooling
area1)
1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is
vertical without air stream cooling
Soldering temperature,
wave- & reflowsoldering allowed Tsold - - 260 °C reflo w MSL1
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics
FinalData Sheet 6 Rev. 2.1, 2010-03-11
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Table 6 Static characteristics
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0 V, ID=0.25 mA
Gate threshold voltage VGS(th) 2.5 3 3.5 VDS=VGS, ID=0.13 mA
Zero gate voltage drain curr ent IDSS --1µAVDS=600 V, VGS=0 V,
Tj=25 °C
-10- VDS=600 V, VGS=0 V,
Tj=150 °C
Gate-source leakage current IGSS - - 100 nA VGS=20 V, VDS=0 V
Drain-source on-state resistance RDS(on) -0.860.95VGS=10 V, ID=1.5 A,
Tj=25 °C
-2.22- VGS=10 V, ID=1.5 A,
Tj=150 °C
Gate resistance RG-16-f=1 MH z, op en dra in
Table 7 Dyn ami c ch a r acte ris tic s
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Input capacitance Ciss -280-pFVGS=0 V, VDS=100 V,
f=1 MHz
Output capacitance Coss -21-
Effective output capacitance,
energy related1)
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
Co(er) -14- VGS=0 V,
VDS=0...480 V
Effective output capacitance, time
related2)
2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Co(tr) -57- ID=constant, VGS=0 V
VDS=0...480V
Turn-on dela y time td(on) -10-nsVDD=400 V,
VGS=10 V, ID=1.9A,
RG= 12.2
(see table 20)
Rise time tr-8-
Turn-off delay time td(off) -60-
Fall time tf-13-
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics
FinalData Sheet 7 Rev. 2.1, 2010-03-11
Table 8 Gate charge characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
IGate to source charge Qgs -1.5-nCVDD=480 V, ID=1.9 A,
VGS=0 to 10 V
Gate to drain charge Qgd -6.5-
Gate charge total Qg-13-
Gate plateau voltage Vplateau -5.4-V
Table 9 Reverse diode characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Diode forward voltage VSD -0.9-VVGS=0 V, IF=1.9 A,
Tj=25 °C
Reverse recovery time trr -220-nsVR=400 V, IF=1.9 A,
diF/dt=100 A/µs
(see table 22)
Reverse reco very charge Qrr -1.5-µC
Peak reverse recovery current Irrm -12-A
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics diagrams
FinalData Sheet 8 Rev. 2.1, 2010-03-11
5 Electrical characteristics diagrams
Table 10
Power dissipation
TO-220, TO-252, TO-263 Power dissipation
TO-220 FullPAK
Ptot = f(TC) Ptot = f(TC)
Table 11
Max. transient thermal impedance
TO-220, TO-252, TO-263 Max. transient thermal impedance
TO-220 Full PAK
Z(thJC)=f(tp); parameter: D=tp/T Z(thJC)=f(tp); parameter: D=tp/T
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics diagrams
FinalData Sheet 9 Rev. 2.1, 2010-03-11
Table 12
Safe operating area TC=25 °C
TO-220, TO-252, TO-263 Safe operating area TC=25 °C
TO-220 FullPAK
ID=f(VDS); TC=25 °C; D=0; parameter tp ID=f(VDS); TC=25 ° C; D=0; pa rameter tp
Table 13
Safe operating area TC=80 °C
TO-220, TO-252, TO-263 Safe operating area TC=80 °C
TO-220 FullPAK
ID=f(VDS); TC=80 °C; D=0; parameter tp ID=f(VDS); TC=80 °C; D=0; parameter tp
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics diagrams
FinalData Sheet 10 Rev. 2.1, 2010-03-11
Table 14
Typ. output characteristics Tj=25 °C Typ. output characteristics Tj=125 °C
ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS
Table 15
Typ. drain-source on- state resistance Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=1.5A; VGS=10 V
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics diagrams
FinalData Sheet 11 Rev. 2.1, 2010-03-11
Table 16
Typ. transfer characteristics Typ. gate charge
ID=f(VGS); VDS=20V VGS=f(Qgate), ID=1.9A pulsed
Table 17
Avalanche energy Drain-source breakdown voltage
EAS=f(Tj); ID=0.8A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics diagrams
FinalData Sheet 12 Rev. 2.1, 2010-03-11
Table 18
Typ. capacitances Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz EOSS=f(VDS)
Table 19
Forward characteristics of reverse diode
IF=f(VSD); parameter: Tj
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Test circuits
FinalData Sheet 13 Rev. 2.1, 2010-03-11
6 Test circuits
Table 20 Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load Switching time waveform
Table 21 Unclamped inductive load test circuit and waveform
Unclamped inductiv e load test circuit Unclamped inductive waveform
Table 22 Test circuit and waveform for diode characteristics
Test circuit for diode characteristics Diode recovery waveform
V
DS
V
GS
VDS
VGS
t
d(on)
t
d( off)
t
r
t
on
t
f
t
off
10%
90%
V
DS
I
D
V
DS
V
D
V
(BR)DS
I
D
V
DS
V
DS
I
D
R
G1
R
G2
R
G1
= R
G2
Ι
F
dit/d
t
rr
10%
90%
Ι
RRM
RRM
Ι
t
RRM
Ι
v
SIL00088
Q
F
v
i
F
Q
S
RRM
V
S
tt
F
/did
rr
t
rr
tt
S
t
F
=+
=
rr
QQ
SF
+
Q
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Package outlines
FinalData Sheet 14 Rev. 2.1, 2010-03-11
7 Package outlines
Figure 1 Outlines TO-252, dimensions in mm/inches
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Package outlines
FinalData Sheet 15 Rev. 2.1, 2010-03-11
Figure 2 Outlines TO-220, dimensions in mm/inches
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Package outlines
FinalData Sheet 16 Rev. 2.1, 2010-03-11
Figure 3 Outlines TO-220 FullPAK, dimensions in mm/inches
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Package outlines
FinalData Sheet 17 Rev. 2.1, 2010-03-11
Figure 4 Outlines TO-263, dimensions in mm/inches
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Revision History
FinalData Sheet 18 Rev. 2.1, 2010-03-11
8 Revision History
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Edition 2010-03-11
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
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Due to technical requirements, components may contain dangerous substances. For information on the type s in
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CoolMOS C6 600V CoolMOS™ C6 Power Transistor
Revision History: 2010-03-11, Rev. 2.1
Previous Revision:
Revision Subjects (major changes since last revision)
2.0 Release of final data sheet
2.1 Change typing error table 1 .Body diode= di/dt
