2N6784
IRFF210
Document Number 6444
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
VDS Drain Source Voltage
ID@Tcase = 25°C Continuous Drain Current
ID@Tcase = 100°C Continuous Drain Current
IDM Pulsed Drain Current 1
VGS Gate Source Voltage
PD@ Tcase = 25°C Maximum Power Dissipation
RθJ-C Thermal Resistance Junction To Case
RθJ-A Thermal Resistance Junction To Ambient
TJ,Tstg Operating and Storage Temperature Range
Lead Temperature ( 1.6mm from case for 10 secs)
200V
2.25A
1.5A
9A
±20V
15W
8.3°C/W
175°C/W
-55 to +150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches) N–CHANNEL
POWER MOSFET
ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
• FAST SWITCHING
• MOTOR CONTROLS
• POWER SUPPLIES
TO39 Package (TO-205AF)
0.89
(0.035)max.
12.70
(0.500)
min.
4.06 (0.16)
4.57 (0.18)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
5.08 (0.200)
typ.
45°
123
Pin 1 - Source Pin 2 - Gate Pin 3 - Drain and Case
Underside View
FEATURES
• REPETITIVE AVALANCHE RATING
• SIMPLE DRIVE REQUIREMENTS
• HERMETICALLY SEALED
Parameter Test Conditions Min. Typ. Max. Unit
V
nA
µA
Ω
S ( )
pF
ns
nC
A
V
ns
µC
2N6784
IRFF210
Document Number 6444
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
200
2.0 4.0
100
-100
25
250
1.5
1.725
0.9
140
55
8.6 15
20
30
20
4.3 6.2
0.7 1.2
0.5 5.0
2.25
9.0
1.5
350
3.0
VGS = 0 ID= 1.0mA
VDS = VGS ID= 250µA
VGS = 20V
VGS = -20V
VDS = 160V. VGS =0
TC= 125°C
VGS = 10V ID= 1.5A
VGS = 10V ID= 2.25A
VDS = 15V IDS = 1.5A
VGS = 0 VDS = 25V
f = 1.0MHz
VDD = 100V ID= 2.25A
RG= 7.5Ω
(MOSFET switching times are essentially
independent of operating temperature.)
VGS = 10V ID= 2.25A
VDS = 100V
Modified MOS POWER
symbol showing the intergal
P-N junction rectifier.
IS= 2.25A VGS = 0
TJ= 25°C
IF = 2.25A TJ= 25°C
di/ dt=100A/µsV
DD = 50V
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Forward
Gate Body Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain Source On-State
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate To Source Charge
Gate To Drain (“Miller”) Charge
Continuous Source Current (Body
Diode)
Source Current (Body Diode)
Diode Forward Voltage*
Reverse Recovery Time
Reverse Recovery Charge
BVDSS
VGS(th)*
IGSSF
IGSSR
IDSS
RDS(on)*
gfs*
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
ISM
VSD
trr
QRR
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
BODY– DRAIN DIODE RATINGS & CHARACTERISTICS
,
5
/
Ω
Notes
* Pulse Test: Pulse Width ≤300µs, δ≤2%
