PZTA92T1 - Motorola / Freescale Semiconductor

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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PNP Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage VCEO –300 Vdc

Collector–Base Voltage VCBO –300 Vdc

Emitter–Base Voltage VEBO –5.0 Vdc

Collector Current IC–500 mAdc

Total Power Dissipation up to TA = 25°C(1) PD1.5 Watts

Storage Temperature Range Tstg –65 to +150 °C

Junction Temperature TJ150 °C

DEVICE MARKING

P2D

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance from Junction to Ambient(1) RθJA 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO –300 — Vdc

Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) V(BR)CBO –300 — Vdc

Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0) V(BR)EBO –5.0 — Vdc

Collector–Base Cutoff Current (VCB = –200 Vdc, IE = 0) ICBO — –0.25 µAdc

Emitter–Base Cutoff Current (VBE = –3.0 Vdc, IC = 0) IEBO —–0.1 µAdc

ON CHARACTERISTICS

DC Current Gain(2)

(IC = –1.0 mAdc, VCE = –10 Vdc)

(IC = –10 mAdc, VCE = –10 Vdc)

(IC = –30 mAdc, VCE = –10 Vdc)

hFE 25

—

Saturation Voltages

(IC = –20 mAdc, IB = –2.0 mAdc)

(IC = –20 mAdc, IB = –2.0 mAdc) VCE(sat)

VBE(sat) —

—–0.5

–0.9

Vdc

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance @ f = 1.0 MHz (VCB = –20 Vdc, IE = 0) Ccb —6.0 pF

Current–Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) fT50 — MHz

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.

2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle = 2.0%.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

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SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1997



Motorola Preferred Device

CASE 318E–04, STYLE 1

TO–261AA

123

SOT–223 PACKAGE

PNP SILICON

HIGH VOLTAGE TRANSISTOR

SURFACE MOUNT

COLLECT OR 2,4

BASE

EMITTER 3

REV 2

PZTA92T1

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGE

POWER DISSIPATION

The power dissipation of the SOT–223 is a function of the

pad size. These can vary from the minimum pad size for

soldering to the pad size given for maximum power

dissipation. Power dissipation for a surface mount device is

determined by TJ(max), the maximum rated junction tempera-

ture of the die, RθJA, the thermal resistance from the device

junction to ambient; and the operating temperature, TA.

Using the values provided on the data sheet for the

SOT–223 package, PD can be calculated as follows.

PD = TJ(max) – TA

RθJA

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature T A of 25°C, one can

calculate the power dissipation of the device which in this

case is 1.5 watts.

PD = 150°C – 25°C

83.3°C/W = 1.5 watts

The 83.3°C/W for the SOT–223 package assumes the

recommended collector pad area of 965 sq. mils on a glass

epoxy printed circuit board to achieve a power dissipation of

1.5 watts. If space is at a premium, a more realistic

approach is to use the device at a PD of 833 mW using the

footprint shown. Using a board material such as Thermal

Clad, a power dissipation of 1.6 watts can be achieved using

the same footprint.

MOUNTING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within a

short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering method,

the difference should be a maximum of 10°C.

•The soldering temperature and time should not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

•After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and result

in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied during

cooling

* Soldering a device without preheating can cause excessive

thermal shock and stress which can result in damage to the

device.

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

0.079

2.0

0.15

3.8

0.248

6.3

0.079

2.0

0.059

1.5 0.059

1.5

0.091

2.3

inches

0.091

2.3

SOT–223

PZTA92T1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

TO–261AA

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

123

0.08 (0003)

DIM

AMIN MAX MIN MAX

MILLIMETERS

0.249 0.263 6.30 6.70

INCHES

B0.130 0.145 3.30 3.70

C0.060 0.068 1.50 1.75

D0.024 0.035 0.60 0.89

F0.115 0.126 2.90 3.20

G0.087 0.094 2.20 2.40

H0.0008 0.0040 0.020 0.100

J0.009 0.014 0.24 0.35

K0.060 0.078 1.50 2.00

L0.033 0.041 0.85 1.05

M0 10 0 10

S0.264 0.287 6.70 7.30

____

CASE 318E–04

ISSUE H

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

PZTA92T1

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

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