16FR40M - Vishay Presicion Group

Document Number: 93491 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 29-Sep-08 1

Standard Recovery Diodes

(Stud Version), 16 A

16F(R) Series

Vishay High Power Products

FEATURES

• High surge current capability

• Stud cathode and stud anode version

• Wide current range

• Types up to 1200 V VRRM

• RoHS compliant

• Designed and qualified for industrial and consumer level

TYPICAL APPLICATIONS

• Battery charges

• Converters

• Power supplies

• Machine tool controls

ELECTRICAL SPECIFICATIONS

Note

(1) Avalanche version only available from VRRM 400 V to 1200 V

PRODUCT SUMMARY

IF(AV) 16 A

DO-203AA (DO-4)

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

IF(AV)

16 A

TC 140 °C

IF(RMS) 25 A

IFSM

50 Hz 350 A

60 Hz 370

I2t50 Hz 612 A2s

60 Hz 560

VRRM Range 100 to 1200 V

TJ- 65 to 175 °C

VOLTAGE RATINGS

TYPE

NUMBER

VOLTAGE

CODE

VRRM, MAXIMUM

REPETITIVE PEAK

REVERSE VOLTAGE

VRSM, MAXIMUM

NON-REPETITIVE

PEAK VOLTAGE

VR(BR), MINIMUM

AVALANCHE

VOLTAGE

V (1)

IRRM MAXIMUM

AT TJ = 175 °C

16F(R)

10 100 150 -

20 200 275 -

40 400 500 500

60 600 725 750

80 800 950 950

100 1000 1200 1150

120 1200 1400 1350

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93491

2Revision: 29-Sep-08

16F(R) Series

Vishay High Power Products Standard Recovery Diodes

(Stud Version), 16 A

Note

(1) Available only for avalanche version, all other parameters the same as 16F

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current

at case temperature IF(AV) 180° conduction, half sine wave 16 A

140 °C

Maximum RMS forward current IF(RMS) 25 A

Maximum on-repetitive peak

reverse power PR(1) 10 µs square pulse, TJ = TJ maximum 15 K/W

Maximum peak, one-cycle forward,

non-repetitive surge current IFSM

t = 10 ms No voltage

reapplied

Sinusoidal half wave,

initial TJ = TJ maximum

350

t = 8.3 ms 370

t = 10 ms 100 % VRRM

reapplied

295

t = 8.3 ms 310

Maximum I2t for fusing I2t

t = 10 ms No voltage

reapplied

612

A2s

t = 8.3 ms 560

t = 10 ms 100 % VRRM

reapplied

435

t = 8.3 ms 395

Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6120 A2√s

Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.77 V

High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 0.90

Low level value of forward

slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 7.80

mΩ

High level value of forward

slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 5.70

Maximum forward voltage drop VFM Ipk = 50 A, TJ = 25 °C, tp = 400 µs rectangular wave 1.23 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating

temperature range TJ- 65 to 175 °C

Maximum storage temperature range TStg - 65 to 200

Maximum thermal resistance,

junction to case RthJC DC operation 1.6

K/W

Maximum thermal resistance,

case to heatsink RthCS Mounting surface, smooth, flat and greased 0.5

Allowable mounting torque

Not lubricated threads 1.5 + 0 - 10 %

(13)

N · m

(lbf · in)

Lubricated threads 1.2 + 0 - 10 %

(10)

N · m

(lbf · in)

Approximate weight 7g

0.25 oz.

Case style See dimensions - link at the end of datasheet DO-203AA (DO-4)

Document Number: 93491 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 29-Sep-08 3

16F(R) Series

Standard Recovery Diodes

(Stud Version), 16 A Vishay High Power Products

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Fig. 3 - Forward Power Loss Characteristics

ΔRthJC CONDUCTION

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.31 0.23

TJ = TJ maximum K/W

120° 0.38 0.40

90° 0.49 0.54

60° 0.72 0.75

30° 1.20 1.21

130

140

150

160

170

180

048121620

30°

60°

90°

120°

180°

Maximum Allowable Case Temperature (°C)

Conduction Angle

Average Forward Current (A)

16F(R) Series

R (DC) = 1.6 K/W

thJC

130

140

150

160

170

180

0 5 10 15 20 25 30

30°

60°

90°

120°

180°

Maximum Allowable Case Temperature (°C)

Conduction Period

Average Forward Current (A)

16F(R) Series

R (DC) = 1.6 K/W

thJC

0255075100

Maximum Allowable Ambient Temperature (°C)

10K/W

15K

R=4K/W-D

eltaR

thSA

6K/W

8K/W

20K/W

30K/W

0 4 8 121620

Average Forward Current (A)

RMS Limit

Maximum Average Forward Power Loss (W)

Conduction Angle

180°

120°

90°

60°

30°

16F(R) Series

T = 175°C

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93491

4Revision: 29-Sep-08

16F(R) Series

Vishay High Power Products Standard Recovery Diodes

(Stud Version), 16 A

Fig. 4 - Forward Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 7 - Forward Voltage Drop Characteristics

Fig. 8 - Thermal Impedance ZthJC Characteristics

0255075100

Maximum Allowable Ambient Temperature (°C)

10K/W

15K/W

R=4K/W-DeltaR

thSA

8K/W

20K/W

30K/W

0 5 10 15 20 25 30

180°

120°

90°

60°

30°

Average Forward Current (A)

RMS Limit

Maximum Average Forward Power Loss (W)

Conduction Period

16F(R) Series

T = 175°C

125

150

175

200

225

250

275

300

325

110100

Peak Half Sine Wave Forward Current (A)

Number Of Equal Amplitude Half Cycle Current Pulses (N)

16F(R) Series

Initial T = 175°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

125

150

175

200

225

250

275

300

325

350

0.01 0.1 1

Peak Half Sine Wave Forward Current (A)

Pulse Train Duration (s)

Maximum Non Repetitive Surge Current

16F(R) Series

Initial T = 175°C

No Voltage Reapplied

Rated V Reapplied

RRM

Versus Pulse Train Duration.

100

1000

0123456

T = 25°C

Instantaneous Forward Current (A)

Instantaneous Forward Voltage (V)

16F(R) Series

T = 175°C

0.1

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

thJC

Transient Thermal Impedance Z (K/W)

16F(R) Series

Steady State Value

R = 1.6 K/W

(DC Operation)

thJC

Document Number: 93491 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 29-Sep-08 5

16F(R) Series

Standard Recovery Diodes

(Stud Version), 16 A Vishay High Power Products

ORDERING INFORMATION TABLE

1- Current rating: Code = IF(AV)

2- F = Standard device

3- None = Stud normal polarity (cathode to stud)

R = Stud reverse polarity (anode to stud)

4- Voltage code x 10 = VRRM (see Voltage Ratings table)

5-None = Stud base DO-203AA (DO-4) 10-32UNF-2A

M = Stud base DO-203AA (DO-4) M5 x 0.8

(not available for avalanche diodes)

Device code

51324

16 F R 120 M

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95311

Document Number: 95311 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 30-Jun-08 1

DO-203AA (DO-4)

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

3.30 (0.13)

4.00 (0.16)

5.50 (0.22) MIN.

10.20 (0.40)

MAX.

11.50 (0.45)

10.70 (0.42)

10/32" UNF-2A

For metric devices: M5 x 0.8

0.8 ± 0.1

(0.03 ± 0.004)

R 0.40

R (0.02)

Ø 6.8 (0.27)

Ø 1.80 ± 0.20

(Ø 0.07 ± 0.01)

3.50 (0.14)

20.30 (0.80) MAX.

11 (0.43)

+ 0.3

(0.08 )

+ 0.01

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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