MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network http://onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. PIN 3 COLLECTOR (OUTPUT) R1 PIN 1 BASE (INPUT) R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAM Features * Simplifies Circuit Design * Reduces Board Space and Component Count * S, NSV Prefix for Automotive and Other Applications Requiring * Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating SOT-23 CASE 318 STYLE 6 A8x M G A8x M G G 1 = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 18 of this data sheet. Collector Current IC 100 mAdc Symbol Max Unit PD 246 (Note 1) 400 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C C/W Thermal Resistance, Junction-to- Ambient RqJA 508 (Note 1) 311 (Note 2) C/W Thermal Resistance, Junction-to-Lead RqJL 174 (Note 1) 208 (Note 2) C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ minimum pad 2. FR-4 @ 1.0 x 1.0 inch pad (c) Semiconductor Components Industries, LLC, 2012 July, 2012 - Rev. 17 Publication Order Number: MMUN2211LT1/D MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current MMUN2211LT1G, SMMUN2211LT1G (VEB = 6.0 V, IC = 0) MMUN2212LT1G MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G MMUN2214LT1G, SMMUN2214LT1G MMUN2215LT1G, SMMUN2215LT1G MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G MMUN2217LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G, NSVMMUN2232LT1G MMUN2233LT1G, SMMUN2233LT1G MMUN2234LT1G, SMMUN2234LT1G MMUN2238LT1G, SMMUN2238LT1G IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 0.5 4.3 2.3 1.5 0.18 0.13 4.0 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 3), (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc DC Current Gain MMUN2211LT1G, SMMUN2211LT1G (VCE = 10 V, IC = 5.0 mA) MMUN2212LT1G MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G MMUN2214LT1G, SMMUN2214LT1G MMUN2215LT1G, SMMUN2215LT1G MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G MMUN2217LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G, NSVMMUN2232LT1G MMUN2233LT1G, SMMUN2233LT1G MMUN2234LT1G, SMMUN2234LT1G MMUN2238LT1G, SMMUN2238LT1G hFE 35 60 80 80 160 160 35 3.0 8.0 15 80 80 160 60 100 140 140 350 350 60 5.0 15 30 200 150 350 - - - - - - - - - - - - - Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) MMUN2211LT1G, SMMUN2211LT1G MMUN2212LT1G MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G MMUN2214LT1G, SMMUN2214LT1G MMUN2234LT1G, SMMUN2234LT1G (IC = 10 mA, IB = 1 mA) MMUN2215LT1G, SMMUN2215LT1G MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G MMUN2217LT1G MMUN2232LT1G, NSVMMUN2232LT1G MMUN2233LT1G, SMMUN2233LT1G MMUN2238LT1G, SMMUN2238LT1G (IC = 10 mA, IB = 5 mA) MMUN2230LT1G MMUN2231LT1G VCE(sat) - - - - - - - - - - - - - - - - - - - - - - - - - - 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 3) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 2 Vdc MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 4) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MMUN2211LT1G, SMMUN2211LT1G MMUN2212LT1G MMUN2214LT1G, SMMUN2214LT1G MMUN2215LT1G, SMMUN2215LT1G MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G MMUN2217LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G, NSVMMUN2232LT1G MMUN2233LT1G, SMMUN2233LT1G MMUN2234LT1G, SMMUN2234LT1G MMUN2238LT1G, SMMUN2238LT1G (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) MMUN2211LT1G, SMMUN2211LT1G MMUN2212LT1G MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G MMUN2214LT1G, SMMUN2214LT1G MMUN2217LT1G MMUN2233LT1G, SMMUN2233LT1G (VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kW) MMUN2230LT1G MMUN2234LT1G, SMMUN2234LT1G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MMUN2215LT1G, SMMUN2215LT1G MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G MMUN2231LT1G MMUN2232LT1G, NSVMMUN2232LT1G MMUN2238LT1G, SMMUN2238LT1G VOH MMUN2211LT1G, SMMUN2211LT1G MMUN2212LT1G MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G MMUN2214LT1G, SMMUN2214LT1G MMUN2215LT1G, SMMUN2215LT1G MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G MMUN2217LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G, NSVMMUN2232LT1G MMUN2233LT1G, SMMUN2233LT1G MMUN2234LT1G, SMMUN2234LT1G MMUN2238LT1G, SMMUN2238LT1G Vdc - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - - 0.2 Vdc 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 - - - - - - - - - - - - - - - - 4.9 4.9 4.9 4.9 4.9 - - - - - - - - - - Input Resistor R1 7.0 15.4 32.9 7.0 7.0 3.3 3.3 0.7 1.5 3.3 3.3 15.4 1.54 10 22 47 10 10 4.7 4.7 1.0 2.2 4.7 4.7 22 2.2 13 28.6 61.1 13 13 6.1 6.1 1.3 2.9 6.1 6.1 28.6 2.88 Resistor Ratio R1/R2 0.8 0.8 0.8 0.17 - - 0.38 0.8 0.8 0.8 0.055 0.38 - 1.0 1.0 1.0 0.21 - - 0.47 1.0 1.0 1.0 0.1 0.47 - 1.2 1.2 1.2 0.25 - - 0.56 1.2 1.2 1.2 0.185 0.56 - MMUN2211LT1G, SMMUN2211LT1G MMUN2212LT1G MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G MMUN2214LT1G, SMMUN2214LT1G MMUN2215LT1G, SMMUN2215LT1G MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G MMUN2217LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G, NSVMMUN2232LT1G MMUN2233LT1G, SMMUN2233LT1G MMUN2234LT1G, SMMUN2234LT1G MMUN2238LT1G, SMMUN2238LT1G 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 kW MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 250 200 1 IC/IB = 10 TA = -25C 25C 75C 0.1 150 100 0.01 RqJA= 625C/W 50 0 -50 0 50 100 0.001 150 0 40 60 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve Figure 2. VCE(sat) vs. IC VCE = 10 V TA = 75C 25C -25C 100 10 1 10 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 A TA = 25C 3 2 1 0 100 0 10 10 20 30 50 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capcitance 10 25C 75C VO = 0.2 V Vin, INPUT VOLTAGE (V) TA = -25C 1 0.1 0.01 0.001 80 4 1000 Figure 3. DC Current Gain IC, COLLECTOR CURRENT (mA) 20 TA, AMBIENT TEMPERATURE (5C) Cob, CAPACITANCE (pF) hFE, DC CURRENT GAIN (NORMALIZED) PD, POWER DISSIPATION (MILLIWATTS) TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2211LT1G, SMMUN2211LT1G TA = -25C 25C 75C 1 VO = 5 V 0 1 2 3 4 5 6 7 8 9 0.1 0 10 Vin, INPUT VOLTAGE (VOLTS) Figure 5. Output Current vs. Input Voltage 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current http://onsemi.com 4 50 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G - 1000 1 TA = -25C IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2212LT1G 25C 75C 0.1 0.01 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 VCE = 10 V TA = 75C 10 10 IC, COLLECTOR CURRENT (mA) 1 Figure 7. VCE(sat) vs. IC IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25C 1 0 10 20 30 50 40 75C 25C TA = -25C 10 1 0.1 0.01 0.001 VO = 5 V 0 2 4 6 8 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) 100 2 0 TA = -25C 10 75C 25C 1 0.1 0 100 Figure 8. DC Current Gain 4 3 -25C 25C 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current http://onsemi.com 5 50 10 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G 10 IC/IB = 10 TA = -25C 75C 25C 1 0.1 0.01 0 20 40 60 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2213LT1G, SMMUN2213LT1G Series TA = 75C 25C -25C 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) vs. IC Figure 13. DC Current Gain 100 0.8 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25C 0.6 0.4 0.2 10 20 30 25C 10 TA = -25C 1 0.1 0.01 0.001 50 40 75C VO = 5 V 0 2 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 14. Output Capacitance 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 15. Output Current vs. Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) VCE = 10 V IC, COLLECTOR CURRENT (mA) 1 0 0 1000 TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage vs. Output Current http://onsemi.com 6 50 10 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G 1 IC/IB = 10 TA = -25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2214LT1G, SMMUN2214LT1G 300 TA = 75C VCE = 10 250 25C 200 -25C 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) vs. IC Figure 18. DC Current Gain 100 4 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 25C TA = -25C 10 VO = 5 V 1 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 20. Output Current vs. Input Voltage Figure 19. Output Capacitance 10 TA = -25C VO = 0.2 V Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25C 3.5 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage vs. Output Current http://onsemi.com 7 50 10 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G 1 1000 IC/IB = 10 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25C 10 1 50 TA = -25C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 4 f = 1 MHz IE = 0 V TA = 25C 3.5 3 2.5 2 1.5 1 0.5 75C 10 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 24. Output Capacitance 25C 1 TA = -25C 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 25C 75C VO = 0.2 V 0.1 0 9 10 Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 23. DC Current Gain 4.5 0 VCE = 10 V 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2215LT1G, SMMUN2215LT1G 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 8 50 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G 1 1000 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = -25C 25C 100 10 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC 100 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 29. Output Capacitance 75C 10 25C TA = -25C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 3.5 100 Figure 28. DC Current Gain 4.5 4 VCE = 10 V 75C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MMUN2216LT1G, SMMUN2216LT1G Series 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage versus Output Current http://onsemi.com 9 50 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G TYPICAL ELECTRICAL CHARACTERISTICS -- MMUN2217LT1G 1000 IC/IB = 10 V hFE, DC CURRENT GAIN VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) 1 25C 75C 0.1 -25C 0.01 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 25C 100 -25C VCE = 10 V 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 32. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 3.5 f = 1 MHz TA = 25C 3.0 2.5 2.0 1.5 1.0 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 75C 10 25C 1 -25C 0.1 0.01 0.001 Figure 34. Output Capacitance VO = 5 V 0 1 2 3 Vin, INPUT VOLTAGE (VOLTS) Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 33. DC Current Gain 4.0 0 75C -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 36. Input Voltage versus Output Current http://onsemi.com 10 50 4 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MMUN2230LT1G 75C 0.1 -25C 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 25C TA = -25C VCE = 10 V 1 50 75C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 37. VCE(sat) versus IC Figure 38. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 39. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 75C 1 25C VO = 0.2 V 0.1 0 9 10 Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 4 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 41. Input Voltage versus Output Current http://onsemi.com 11 50 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MMUN2231LT1G 75C 0.1 -25C 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) TA = -25C VCE = 10 V 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 4 f = 1 MHz IE = 0 V TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 44. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 75C 1 25C VO = 0.2 V 0.1 0 9 10 Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 43. DC Current Gain 4.5 0 25C 75C 10 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 46. Input Voltage versus Output Current http://onsemi.com 12 50 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2232LT1G, NSVMMUN2232LT1G 1000 IC/IB =10 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 1 TA = 75C 0.1 25C -25C 0.01 0.001 4 8 12 16 20 24 VCE = 10 V TA = 75C 100 10 1 28 0 25 IC, COLLECTOR CURRENT (mA) 75 100 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25C 5 4 3 2 1 10 20 30 40 50 60 VO = 5 V 75C 25C 10 1 TA = -25C 0.1 0.01 0 2 4 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 49. Output Capacitance Figure 50. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) 0 125 Figure 48. DC Current Gain 6 Cob, CAPACITANCE (pF) 50 IC, COLLECTOR CURRENT (mA) Figure 47. VCE(sat) vs. IC 0 25C -25C VO = 0.2 V TA = -25C 75C 1 0.1 0 25C 10 20 IC, COLLECTOR CURRENT (mA) Figure 51. Input Voltage vs. Output Current http://onsemi.com 13 30 8 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2233LT1G, SMMUN2233LT1G 1000 IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 1 25C TA = -25C TA = -25C 10 VCE = 10 V 0.001 2 7 12 17 27 22 1 32 100 10 IC, COLLECTOR CURRENT (mA) Figure 52. VCE(sat) vs. IC Figure 53. DC Current Gain IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 10 20 30 40 50 60 75C TA = -25C 10 1 0.1 0.01 25C 0 VO = 5 V 2 4 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 54. Output Capacitance Figure 55. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) 0 1 IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 25C 100 75C 0.01 75C VO = 0.2 V TA = -25C 25C 75C 1 0.1 0 6 24 12 18 IC, COLLECTOR CURRENT (mA) Figure 56. Input Voltage vs. Output Current http://onsemi.com 14 30 8 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G 1000 1 VCE = 10 V IC/IB = 10 0.1 75C -25C 0.01 0.001 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MMUN2234LT1G, SMMUN2234LT1G 0 5 25C 10 15 25 20 IC, COLLECTOR CURRENT (mA) 30 75C 100 TA = -25C 25C 10 1 1 Figure 57. VCE(sat) versus IC 10 IC, COLLECTOR CURRENT (mA) Figure 58. DC Current Gain http://onsemi.com 15 100 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2238LT1G, SMMUN2238LT1G 1000 75C IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 1 75C 25C TA = -25C 0.01 25C 10 VCE = 10 V 0.001 0 20 40 60 100 80 1 10 Figure 59. VCE(sat) vs. IC Figure 60. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 Mhz TA = 25C 3 2.5 2 1.5 1 0.5 10 30 20 40 10 25C 1 TA = -25C 0.1 0.01 50 75C VO = 5 V 0 1 2 3 4 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 61. Output Capacitance Figure 62. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) 0 100 IC, COLLECTOR CURRENT (mA) 3.5 0 1 IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) TA = -25C 100 VO = 0.2 V 1 25C TA = -25C 75C 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 63. Input Voltage vs. Output Current http://onsemi.com 16 50 5 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 64. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 65. Open Collector Inverter: Inverts the Input Signal Figure 66. Inexpensive, Unregulated Current Source http://onsemi.com 17 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G ORDERING INFORMATION Device MMUN2211LT1G MMUN2211LT3G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2217LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G R1(k) R2(k) Package Shipping 10 10 3000 / Tape & Reel 10 10 SOT-23 (Pb-Free) A8B 22 22 SOT-23 (Pb-Free) A8C 47 47 SOT-23 (Pb-Free) A8D 10 47 SOT-23 (Pb-Free) A8E 10 SOT-23 (Pb-Free) A8F 4.7 SOT-23 (Pb-Free) AAM 4.7 10 SOT-23 (Pb-Free) A8G 1.0 1.0 SOT-23 (Pb-Free) A8H 2.2 2.2 SOT-23 (Pb-Free) A8J 4.7 4.7 SOT-23 (Pb-Free) A8K 4.7 47 SOT-23 (Pb-Free) 22 47 SOT-23 (Pb-Free) 22 47 SOT-23 (Pb-Free) 10,000 / Tape & Reel 2.2 SOT-23 (Pb-Free) 3000 / Tape & Reel 10 10 10 10 Marking A8A MMUN2234LT1G MMUN2234LT3G MMUN2238LT1G SMMUN2211LT1G SMMUN2211LT3G A8L A8R A8A SOT-23 (Pb-Free) 10,000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 10,000 / Tape & Reel SMMUN2213LT1G A8C 47 47 SMMUN2213LT3G A8C 47 47 A8D 10 47 SOT-23 (Pb-Free) 3000 / Tape & Reel A8E 10 SOT-23 (Pb-Free) 3000 / Tape & Reel 4.7 4.7 A8K 4.7 4.7 SOT-23 (Pb-Free) 3000 / Tape & Reel A8L 22 47 SOT-23 (Pb-Free) 3000 / Tape & Reel A8R 2.2 SOT-23 (Pb-Free) 3000 / Tape & Reel A8J 4.7 4.7 SOT-23 (Pb-Free) 3000 / Tape & Reel SMMUN2214LT1G SMMUN2215LT1G SMMUN2216LT1G SMMUN2216LT3G SMMUN2233LT1G SMMUN2234LT1G SMMUN2238LT1G NSVMMUN2232LT1G A8F SOT-23 (Pb-Free) SOT-23 (Pb-Free) 3000 / Tape & Reel 10,000 / Tape & Reel 3000 / Tape & Reel 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 18 MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 19 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMUN2211LT1/D