MCL4148.MCL4448
Vishay Telefunken
Rev. 3, 01-Apr-99 1 (5)
www.vishay.de •FaxBack +1-408-970-5600Document Number 85566
Silicon Epitaxial Planar Diodes
Features
D
Saving space
D
Hermetic sealed parts
D
Fits onto SOD 323 / SOT 23 footprints
D
Electrical data identical with the devices 1N4148
and 1N4448 respectively
D
Micro Melf package
Applications
Extreme fast switches
96 12315
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage VRRM 100 V
Reverse voltage VR75 V
Peak forward surge current tp=1
m
s IFSM 2 A
Repetitive peak forward current IFRM 450 mA
Forward current IF200 mA
Average forward current VR=0 IFAV 150 mA
Power dissipation PV500 mW
Junction temperature Tj175
°
C
Storage temperature range Tstg –65...+175
°
C
Maximum Thermal Resistance
Tj = 25
_
C
Parameter Test Conditions Symbol Value Unit
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1, 35
m
m
copper clad, 0.9 mm2 copper area per electrode RthJA 500 K/W
MCL4148.MCL4448
Vishay Telefunken
Rev. 3, 01-Apr-992 (5)
www.vishay.de •FaxBack +1-408-970-5600 Document Number 85566
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=5mA MCL4448 VF0.62 0.72 V
g
IF=50mA MCL4148 VF0.86 1 V
IF=100mA MCL4448 VF0.93 1 V
Reverse current VR=20V IR25 nA
VR=20V, Tj=150
°
C IR50
m
A
VR=75V IR5
m
A
Breakdown voltage IR=100
m
A, tp/T=0.01,
tp=0.3ms V(BR) 100 V
Diode capacitance VR=0, f=1MHz, VHF=50mV CD4 pF
Rectification efficiency VHF=2V, f=100MHz
h
r45 %
Reverse recovery time IF=IR=10mA, iR=1mA trr 8 ns
y
IF=10mA, VR=6V, iR=0.1xIR,
RL=100
W
trr 4 ns
Characteristics (Tj = 25
_
C unless otherwise specified)
25
2.5
10
0.71 1.3 1.27
9.9
24
0.152
0.355
95 10329
Figure 1. Board for RthJA definition (in mm)
1.2
1.2
2.4
0.6 0.6
95 10330
Reflow Soldering
Figure 2. Recommended foot pads (in mm)
1.4
1.4
2.8
0.7 0.7
95 10331
Wave Soldering
Figure 3. Recommended foot pads (in mm)
MCL4148.MCL4448
Vishay Telefunken
Rev. 3, 01-Apr-99 3 (5)
www.vishay.de •FaxBack +1-408-970-5600Document Number 85566
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I – Forward Current ( mA )
F
VF – Forward Voltage ( V )
2.0
94 9096
LL 4148
Scattering Limit
Tj=25°C
Figure 4. Forward Current vs. Forward Voltage
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I – Forward Current ( mA )
F
VF – Forward Voltage ( V )
2.0
94 9097
LL 4448
Scattering Limit
Tj=25°C
Figure 5. Forward Current vs. Forward Voltage
110
1
10
100
1000
I – Reverse Current ( nA )
R
VR – Reverse Voltage ( V )
100
94 9098
Scattering Limit
Tj=25°C
Figure 6. Reverse Current vs. Reverse Voltage
0.1 1 10
0
0.5
1.0
1.5
2.0
3.0
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
100
94 9099
2.5 f=1MHz
Tj=25°C
Figure 7. Diode Capacitance vs. Reverse Voltage
MCL4148.MCL4448
Vishay Telefunken
Rev. 3, 01-Apr-994 (5)
www.vishay.de •FaxBack +1-408-970-5600 Document Number 85566
Dimensions in mm
96 12072
MCL4148.MCL4448
Vishay Telefunken
Rev. 3, 01-Apr-99 5 (5)
www.vishay.de •FaxBack +1-408-970-5600Document Number 85566
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
