LESHAN RADIO COMPANY, LTD.
L2SD2114K*LT1–1/4
Epitaxial planar type
NPN silicon transistor
zFeatures
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC/ IB= 500mA / 20mA)
1
3
2
SOT– 23 (TO–236AB)
L2SD2114K*LT1
1
BASE
2
EMITTER
COLLECTOR
3
zAbsolute maximum ratings (Ta=25°C)
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
25 V
V
V
A(DC)
W
°C
°C
20
12
0.5
A(Pulse)1
∗
0.2
150
−55∼+150
Symbol Limits Unit
∗Single pulse Pw=100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
∗
Cob
Min.
25
20
12
−
−
−
−
−
−
−
−
−
−
0.18
350
8.0
−
−
−
0.5
0.5
0.4
−
−
VI
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=20V
V
EB
=10V
I
C
/I
B
=500mA/20mA
V
CE
=10V, I
E
=−50mA, f=100MHz
V
CB
=10V, I
E
=0A, f=1MHz
V
V
µA
µA
h
FE
820 −2700 V
CE
=3V, I
C
=10mA
−
V
MHz
pF
Ron −0.8 −I
B
=1mA, Vi=100mV(rms), f=1kHzpF
Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Output On-resistance
∗ Measured using pulse current
hFE Values Classification, Device Marking and Ordering Information
Device hFE Marking Shipping
L2SD2114KVLT1 820~1800 BV 3000/Tape&Reel
L2SD2114KVLT1G 820~1800 BV
(Pb-Free) 3000/Tape&Reel
L2SD2114KWLT1 1200~2700 BW 3000/Tape&Reel
L2SD2114KWLT1G 1200~2700 BW
(Pb-Free) 3000/Tape&Reel
4) Pb-Free package is available.
ƽ
LESHAN RADIO COMPANY, LTD.
L2SD2114K*LT1-2/4
zElectrical characteristic curves
0
0.4
0.8
1.2
1.6
2.0
0 0.1 0.2 0.3 0.4 0.5
Ta=25˚C
0.2µA
0.4µA
0.6µA
0.8µA
1.0µA
1.2µA
1.4µA
1.6µA
I
B
=0
1.8µA
2.0µA
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics(Ι)
0
200
400
600
800
1000
0246810
Ta
=
25°C
Measured using
pulse current.
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
1.6mA
1.8mA 2.0mA
I
B
=0mA
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics(ΙΙ)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
2
5
10
20
50
100
200
500
1000
COLLECTOR CURRENT : IC
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.3 Grounded emitter propagation
characteristics
V
CE
=3V
Measured using
pulse current.
25°C
−25°C
Ta=100°C
1 2 5 10 20 50 100 200 5001000
10
20
50
100
200
500
1000
2000
5000
10000 Ta=25°C
Measured using
pulse current.
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current(Ι)
3V
V
CE
=5V
1V
1 2 5 10 20 50 100 200 5001000
10000
5000
2000
1000
500
200
100
50
20
10
V
CE
=3V
Measured using
pulse current.
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current(ΙΙ)
25°C
−25°C
Ta=100°C
1
2
2000
1000
200
500
100
20
50
10
5
2 5 10 20 50 100 200 5001000
Ta=25°C
Measured using
pulse current.
10
25
50
I
C
/I
B
=100
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current(Ι)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)(mV)
COLLECTOR CURRENT : I
C
(mA)
1
2
2000
1000
200
500
100
20
50
10
5
2 5 10 20 50 100 200 5001000
I
C/
I
B=
25
Measured using
pulse current.
Fig.7 Collector-emitter saturation
voltage vs. collector current(ΙΙ)
Ta=100°C
25°C
−25°C
BASE SATURATION VOLTAGE : V
BE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.8 Base-emitter saturation
voltage vs. collector current(Ι)
1 2 5 10 20 50 100 200 5001000
10000
5000
2000
1000
500
200
100
50
20
10
Ta
=
25°C
Pulsed
I
C
/I
B
=10
25
50
100
1 2 5 10 20 50 100 200 5001000
10000
5000
2000
1000
500
200
100
50
20
10
BASE SATURATION VOLTAGE : V
BE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.9 Base-emitter saturation voltage
vs. collector current(ΙΙ)
Measured using
pulse current.
l
C
/l
B
=10
25°C
100°C
Ta=−25°C
L2SD2114K*LT1
LESHAN RADIO COMPANY, LTD.
L2SD2114K*LT1-3/4
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.10 Gain bandwidth product vs.
emitter current
-1 -2 -5 -10 -20 -50 -100-200 -500-1000
10000
5000
2000
500
200
1000
100
20
50
10
Ta
=
25°C
V
CE
=
10V
Measured using
pulse current.
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.11 Collector output capacitance
vs. collector-base voltage
100
200
500
1000
10
20
50
2
5
1
Ta
=
25°C
f
=
1MHz
I
E
=
0A
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
ON RESISTANCE : Ron
(Ω)
BASE CURRENT : I
B
(mA)
Fig.12 Output-on resistance vs.
base current
0.1
0.2
0.5
1
2
5
10
20
50
100 Ta=25°C
f=1kHz
Vi=100mV(
rms)
R
L
=1kΩ
zRon measurement circuit
Ron=×RL
v
0
v
0
v
i−
v
0
R
L
=1kΩ
I
B
Output
Input
1kHz
100mV(rms)
v
i
V
L2SD2114K*LT1
LESHAN RADIO COMPANY, LTD.
L2SD2114K*LT1-4/4
DJ
K
L
A
C
BS
H
GV
12
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A0.1102 0.1197 2.80 3.04
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
0.031
0.8
SOT-23
3
L2SD2114K*LT1
