TSOP48..SJ1 Vishay Semiconductors Photo Modules for PCM Remote Control Systems Available Types For Different Carrier Frequencies Type fo Type fo TSOP4830SJ1 30 kHz TSOP4833SJ1 33.0 kHz TSOP4836SJ1 36 kHz TSOP4837SJ1 36.7 kHz TSOP4838SJ1 38 kHz TSOP4840SJ1 40.0 kHz TSOP4856SJ1 56 kHz Description The TSOP48..SJ1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. TSOP48..SJ1 is the standard IR remote control receiver series, supporting all major transmission codes. 16656 Features Special Features Photo detector and preamplifier in one package Low power consumption Internal filter for PCM frequency High immunity against ambient light Improved shielding against electrical field disturbance Continuous data transmission possible (800 bit/s) Suitable burst length 10 cycles/burst TTL and CMOS compatibility Output active low Block Diagramm 3 Control Circuit Input 30 k 1 PIN AGC Band Pass VS OUT Demodulator 2 GND 9612226 Document Number 82118 Rev. 4, 03-May-02 www.vishay.com 1 (7) TSOP48..SJ1 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25C Parameter Test Conditions Symbol Value Unit VS -0.3...6.0 V Supply Voltage (Pin 3) Supply Current (Pin 3) IS 5 mA Output Voltage (Pin 1) VO -0.3...6.0 V Output Current (Pin 1) IO 5 mA Tj 100 C Storage Temperature Range Tstg -25...+85 C Operating Temperature Range Tamb -25...+85 C Junction Temperature Power Consumption (Tamb 85 C) Ptot 50 mW Soldering Temperature t 10 s, 1 mm from case Tsd 260 C Basic Characteristics Tamb = 25C Parameter Supply y Current ((Pin 3)) Transmission Distance Test Conditions Symbol Min. Typ. Max. Unit VS = 5 V, Ev = 0 ISD 0.8 1.1 1.5 mA VS = 5 V, Ev = 40 klx, sunlight ISH 1.4 mA d 35 m Ev = 0, test signal see fig.7, IR diode TSAL6200, IF = 250 mA Supply Voltage VS Output Voltage Low (Pin 1) IOSL = 0.5 mA,Ee = 0.7 mW/m2 4.5 VOSL 5.5 V 250 mV Ee min 0.3 0.6 mW/m 2 Irradiance (30-40 kHz) Pulse width tolerance: tpii - 5/fo < tpo < tpii + 6/fo, test signal see fig.7 Ee min 0.2 0.4 mW/m 2 Irradiance tpi - 5/fo < tpo < tpi + 6/fo Ee max Directivity Angle of half transmission distance Irradiance (56 kHz) W/m 2 30 1/2 45 deg Application Circuit 100 *) 3 TSOP48..SJ1 TSAL62.. 4.7 F *) +5V >10 k optional 1 C **) 16247 2 GND *) recommended to suppress power supply disturbances **) the output voltage should not be hold continuously at a voltage below 3.3V by the external circuit. www.vishay.com 2 (7) Document Number 82118 Rev. 4, 03-May-02 TSOP48..SJ1 Vishay Semiconductors Suitable Data Format The circuit of the TSOP48..SJ1 is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpassfilter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. Some examples for suitable data format are: NEC Code, Toshiba Micom Format, Sharp Code, RC5 Code, R-2000 Code. When a disturbance signal is applied to the TSOP48..SJ1 it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occure. The data signal should fullfill the following condition: * Carrier frequency should be close to 38 kHz. * Burst length should be 10 cycles/burst or longer. * After each burst which is between 10 cycles and 70 cycles a gap time of at least 14 cycles is neccessary. * For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the data stream. This gap time should be at least 4 times longer than the burst. * Up to 800 short bursts per second can be received continuously. 0 5 Some examples for such disturbance signals which are suppressed by the TSOP48..SJ1 are: * DC light (e.g. from tungsten bulb or sunlight) * Continuous signal at 38 kHz or at any other frequency * Signals from fluorescent lamps with electronic ballast with low modulation (see Figure A or Figure B). 10 15 20 time [ms] Figure A: IR Signal from Fluorescent Lamp with low Modulation 0 5 10 15 20 time [s] Figure B: IR Signal from Fluorescent Lamp with high Modulation Document Number 82118 Rev. 4, 03-May-02 www.vishay.com 3 (7) TSOP48..SJ1 Vishay Semiconductors Typical Characteristics (Tamb = 25C, unless otherwise specified) Ee min - Threshold Irradiance ( mW/m2 ) eE min /e E - Rel. Responsitivity 1.0 0.8 0.6 0.4 0.2 f = f05% f ( 3dB ) = f0/10 2.0 f(E)=f0 1.6 1.2 0.8 0.4 0.0 0.0 0.7 0.8 0.9 1.0 1.1 1.3 1.2 f/f0 - Relative Frequency 94 8143 Figure 1. Frequency Dependence of Responsivity tpo - Output Pulse Length (ms) 0.9 0.8 Input burst duration 0.6 0.5 = 950 nm, optical test signal, fig.7 0.4 0.3 0.2 0.1 1.0 10.0 1 kHz 10 kHz 1 100 Hz Correlation with ambient light sources (Disturbanceeffect):10W/m21.4klx (Stand.illum.A,T=2855K)8.2klx (Daylight,T=5900K) 4.5 4.0 3.5 3.0 2.5 2.0 Ambient, = 950 nm 1.5 1.0 0.5 0.0 0.01 96 12111 0.10 1.00 10.00 E - DC Irradiance (W/m2) 100.00 Figure 3. Sensitivity in Bright Ambient www.vishay.com 4 (7) 0.1 0.01 0.1 1 10 100 1000 VsRMS - AC Voltage on DC Supply Voltage (mV) Figure 5. Sensitivity vs. Supply Voltage Disturbances E e min - Threshold Irradiance (mW/m2 ) E e min - Threshold Irradiance (mW/m2 ) 5.0 2.0 1.6 f = f0 94 9106 Figure 2. Sensitivity in Dark Ambient 1.2 10 100.0 1000.0 10000.0 Ee - Irradiance ( mW/m2 ) 96 12110 0.8 Figure 4. Sensitivity vs. Electric Field Disturbances 0.0 0.1 0.4 E - Field Strength of Disturbance ( kV/m ) Ee min - Threshold Irradiance ( mW/m2 ) 1.0 0.7 0.0 94 8147 1.0 0.9 0.8 Sensitivity in dark ambient 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -30 -15 0 15 30 45 60 75 96 12112 Tamb - Ambient Temperature ( C ) 90 Figure 6. Sensitivity vs. Ambient Temperature Document Number 82118 Rev. 4, 03-May-02 TSOP48..SJ1 Vishay Semiconductors Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms) t tpi * T * tpi 10/fo is recommended for optimal function Output Signal VO 1) 2) VOH 16110 7/f0 < td < 15/f0 tpo = tpi 6/f0 1.0 Ton ,Toff - Output Pulse Length (ms) Ee 0.9 0.8 Ton 0.7 0.6 0.5 Toff 0.4 0.3 = 950 nm, optical test signal, fig.8 0.2 0.1 0.0 0.1 VOL td1 ) t tpo2 ) 100.0 1000.0 10000.0 t 600 s T = 60 ms 94 8134 Output Signal, ( see Fig.10 ) VOH S ( )rel - Relative Spectral Sensitivity Optical Test Signal 600 s VO 10.0 Figure 10. Output Pulse Diagram Figure 7. Output Function Ee 1.0 Ee - Irradiance (mW/m2) 96 12114 1.2 1.0 0.8 0.6 0.4 0.2 0 750 VOL Ton t Toff 850 950 1150 1050 - Wavelength ( nm ) 94 8408 Figure 11. Relative Spectral Sensitivity vs. Wavelength Figure 8. Output Function 0 10 20 30 0.8 f = 38 kHz Envelope Duty Cycle 0.7 0.6 40 0.5 1.0 0.4 0.9 50 0.3 0.8 60 0.2 70 0.7 0.1 80 0.0 10 16156 20 30 40 50 60 70 80 Burstlength [number of cycles/burst] Figure 9. Max. Envelope Duty Cycle vs. Burstlength Document Number 82118 Rev. 4, 03-May-02 0.6 90 96 12223p2 0.6 0.4 0.2 0 0.2 0.4 drel - Relative Transmission Distance Figure 12. Directivity www.vishay.com 5 (7) TSOP48..SJ1 Vishay Semiconductors Dimensions in mm 16705 www.vishay.com 6 (7) Document Number 82118 Rev. 4, 03-May-02 TSOP48..SJ1 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 82118 Rev. 4, 03-May-02 www.vishay.com 7 (7)