LOW NOISE AMPLIFIERS - CHIP
1
HMC518
v02.0217
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
General Description
Features
Functional Diagram
The HMC518 chip is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplier (LNA) which
covers the 20 to 32 GHz frequency range. The
HMC518 provides 15 dB of small signal gain, 3 dB
of noise gure and has an output IP3 greater than
23 dBm. The chip can easily be integrated into hy-
brid or MCM assemblies due to its small size. All data
is tested with the chip in a 50 Ohm test xture con-
nected via 0.075mm (3 mil) ribbon bonds of minimal
length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter
bondwires may also be used to make the RFIN and
RFOUT connections.
Noise Figure: 3 dB
Gain: 15 dB
OIP3: 23 dBm
Single Supply: +3V @ 65 mA
50 Ohm Matched Input/Output
Die Size: 2.27 x 1.32 x 0.1 mm
Electrical Specications, TA = +25° C, Vdd 1, 2, 3 = +3V
Typical Applications
The HMC518 is ideal for use as a LNA or driver ampli-
er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 20 - 28 28 - 32 GHz
Gain 12 15 10 13 dB
Gain Variation Over Temperature 0.015 0.025 0.015 0.025 dB/ °C
Noise Figure 3.0 4.0 3.5 5.5 dB
Input Return Loss 13 10 dB
Output Return Loss 15 10 dB
Output Power for 1 dB Compression (P1dB) 9 12 912 dBm
Saturated Output Power (Psat) 14 16 dBm
Output Third Order Intercept (IP3) 23 25 dBm
Supply Current (Idd)(Vdd = +3V) 65 88 65 88 mA
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
2
HMC518
v02.0217
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Noise Figure vs. Temperature Output IP3 vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
16 18 20 22 24 26 28 30 32 34
S21 S11 S22
GAIN (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
18 20 22 24 26 28 30 32 34
+25 C +85 C -55 C
GAIN (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
18 20 22 24 26 28 30 32 34
+25 C +85 C -55 C
RETURN LOSS (dB)
FREQUENCY (GHz) -25
-20
-15
-10
-5
0
18 20 22 24 26 28 30 32 34
+25 C +85 C -55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
18 20 22 24 26 28 30 32 34
+25 C +85 C -55 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
5
10
15
20
25
30
35
18 20 22 24 26 28 30 32 34
+25 C +85 C -55 C
IP3 (dBm)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
3
HMC518
v02.0217
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
P1dB vs. Temperature
Power Compression @ 29 GHzReverse Isolation vs. Temperature
Psat vs. Temperature
Gain, Noise Figure & Power vs.
Supply Voltage @ 29 GHz
0
4
8
12
16
20
18 20 22 24 26 28 30 32 34
+25 C +85 C -55 C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
18 20 22 24 26 28 30 32 34
+25 C +85 C -55 C
Psat (dBm)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
18 20 22 24 26 28 30 32 34
+25 C +85 C -55 C
ISOLATION (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
-20 -15 -10 -5 0 5
Pout Gain PAE
Pout (dBm), GAIN (dB), PAE(%)
INPUT POWER (dBm)
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
2.5 3 3.5
GAIN (dB), P1dB (dBm)
NOISE FIGURE (dB)
Vdd (V)
Gain
P1dB
Noise Figure
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
4
HMC518
v02.0217
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc
RF Input Power (RFIN)(Vdd = +3.0 Vdc) +7 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 29 mW/°C above 85 °C) 2.65 W
Thermal Resistance
(channel to die bottom) 54.6 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ESD Sensitivity (HBM) Class 1A
Vdd (Vdc) Idd (mA)
+2.5 61
+3.0 65
+3.5 69
Typical Supply Current vs. Vdd
Note: Amplier will operate over full voltage ranges shown
above.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
5
HMC518
v02.0217
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
1RFIN This pad is AC coupled
and matched to 50 Ohms.
2, 3, 4 Vdd1, 2, 3 Power Supply Voltage for the amplier. External bypass
capacitors of 100 pF and 0.1 µF are required.
5RFOUT This pad is AC coupled
and matched to 50 Ohms.
6, 7, 8 Vgg3, Vgg2, Vgg1 These pads must be connected to RF/DC
ground for proper operation.
Die Bottom GND Die Bottom must be connected to RF/DC ground.
Assembly Diagram
Note: Vgg1, Vgg2 and Vgg3 must be connected to RF/DC ground.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
6
HMC518
v02.0217
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of the
die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick
molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm
to 0.152 mm (3 to 6 mils). Gold ribbon of 0.075 mm (3 mils) width and minimum
< 0.31 mm (<12 mils) is recommended.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD
protective containers, and then sealed in an ESD protective bag for
shipment. Once the sealed ESD protective bag has been opened, all die
should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with
vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
3 mil Ribbon Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
3 mil Ribbon Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
Mouser Electronics
Authorized Distributor
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HMC518