SIEMENS CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET HiFfel Discrete and Microwave Semiconductor 4A 3 @ For professional pre- and driver-amplifiers For frequencies from 500 MHz to 20 GHz Hermetically sealed microwave package 1 9 Low noise figure, high gain, moderate power -@S@ Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5613/008, Type Variant No.s 01 to 05 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking | Ordering Code | Pin Configuration Package 1 2 3 4 CFY25-P (ql) - see below G Ss DBD | S |Micro-xX CFY25-23 (ql) CFY25-23P (ql) CFY25-20 (ql) CFY25-20P (ql) CFY25-nnl: specifies noise, gain and output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, Ordering Code: Q62703F120 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62703F119 (see order instructions for ordering example) Semiconductor Group 1 of 8 Draft D, Jul. 98SIEMENS CFY25 Maximum Ratings Parameter Symbol | Values Unit Drain-source voltage Vos 5 Vv Drain-gate voltage Voc 7 Vv Gate-source voltage (reverse /forward) | V.. -5...4+0.5 Vv Drain current I, 80 mA Gate forward current I, 1.5 mA RF Input Power, C- and X-Band P.., +17 dBm Junction temperature T, 175 C Storage temperature range Tag -65...4+175 C Total power dissipation P.., 250 mW Soldering temperature * T.., 230 C Thermal Resistance Junction-soldering point Ris <410 KAW Notes.: 1) For V,, <3 V. For V,, > 3 V, derating is required. DS 2) ALT, = + 72.5 C. For I, > + 72.5 C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2o0f 8 Draft D, Jul. 98SIEMENS CFY25 Electrical Characteristics (at T,=25C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current bes 15 30 60 mA Vis =3V.V,,=0V Gate threshold voltage Voth 0.3 1.0 3.0 Vv Vis= 3 V, =1 mA Drain current at pinch-off op - <100 |- LA Vig=S ViVi G=-4V Gate leakage current at pinch-off le, - < 100 |200 LA Visa SV. Vog=-4V Transconductance Dns 35 40 - ms Vie = 3 V,1,=15 mA Gate leakage current at operation lots - <1 2 LA Vis = 3 V.1,=15 mA Thermal resistance Rivus - 370 - K/W junction to soldering point Semiconductor Group 3 of 8 Draft D, Jul. 98SIEMENS CFY25 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Noise figure NF dB V,,=3V, |, = 15 mA, f= 12 GHz CFY25-P <2.3 CFY25-20, -20P 1.9 2.1 CFY25-23, -23P 2.2 2.4 Associated gain. G, dB V,,=3V, |, = 15 mA, f= 12 GHz CFY25-P > 85 CFY25-20, -20P 8.5 9 CFY25-23, -23P 8.0 8.7 Output power at 1 dB gain compression | P,,, dBm Vos = 3 V, lynean = 20 MA, f = 12 GHz CFY25-20, -23 15 CFY25-20P, 23P, -P 14 15 Linear power gain G,, dB Vis =3V, |, = 20 mA, f = 12 GHz, P_=0dBm CFY25-20 9.2 CFY25-23 8.5 CFY25-20P, -P 8.5 9.2 CFY25-23P 8.0 8.5 1) Noise figure / sssociated gain characteristics given for minimum noise figure matching conditions (fixed generic matching, no fine-tuning). 2) Output power / linear power gain characteristics given for optimum output power matching conditions (fixed generic matching, no fine-tuning). Semiconductor Group 4of8 Draft D, Jul. 98SIEMENS CFY25 Typical Common Source S-Parameters CFY25-20 f [Sii| <Sii |S21| <S821 |812| <S1i2 |822| <S22 k-Fact. S,,/S,, MAG [GHz] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB] [dB] 05 0958 -22 3,301 160 0,0170 71 0,683 -14 0,44 229 10 0931 -28 3,208 155 0,0287 64 0,673 -18 0,50 20,5 15 0901 -36 3,107 148 0,0398 59 0,660 -23 0,54 18,9 2,0 0,875 -45 3,016 139 0,0502 53 0,648 -29 0,56 17,8 2,5 0,858 -56 2,950 130 0,0602 47 0,635 = -35 0,55 16,9 3,0 0,838 -67 2,877 120 0,0691 42 0,621 -41 0,56 16,2 3,5 0,815 -78 2,795 111 0,0767 36 0,603 -48 0,58 15,6 40 0,794 -88 2,708 102 0,0834 31 0,590 -54 0,61 15,1 45 0,776 -98 2,621 93 0,0893 25 0,573 -60 0,64 14,7 5,0 0,760 -108 2,537 84 0,0939 20 0,562 -67 0,66 14,3 5,5 0,746 -117 2,451 76 0,0975 15 0,549 -73 0,69 14,0 6,0 0,732 -126 2,365 68 0,1000 10 0,539 -80 0,72 13,7 6,5 0,718 -135 2,281 60 00,1017 5 0,529 -86 0,77 13,5 7,0 0,703 -143 2,202 52 00,1035 1 0,521 -91 0,81 13,3 7,5 0,689 -150 2,133 45 0,1049 -3 0,511 -96 0,87 13,1 8,0 0,674 -158 2,072 38 0,1056 -6 0,504 -101 0,92 129 85 0,661 -166 2,020 30 0,1063 -10 0495 -106 0,97 12,8 90 0650 -174 1,976 23 0,1068 -13 0,484 -111 1,02 12,7 11,7 95 0640 178 1,933 16 0,1076 -16 0,474 -116 6 12,5 11,0 10,0 0,629 170 = 1,896 9 00,1080 -20 0,463 -121 11.06612,4 10,4 10,5 0,620 162 1,859 2 0,1084 -23 0,452 -127 16 12,3 9,9 11,0 0613 153 1,826 -5 0O,1090 -26 0,443 -133 19 12,2 9,6 11,5 0607 145 1,797 -13 0,1097 -29 0,436 -140 22) 12,1 9,3 12,0 0,600 137 1,767 -20 0,1105 -33 0,431 -147 24 612.0 9,1 12,5 0,593 130 1,738 -27 O,1114 -36 0,426 -153 ff 611,9 8,8 13,0 0,587 122 1,708 -34 0,1125 -40 0,421 -159 1 1 1 1 1 1 1 eS a i si si sis 30 11,8 85 13,5 0580 114 1,678 -41 0.11388 -43 0419 -166 1,32 11,7 83 14,0 0575 106 1,651 -49 0.1149 -47 0417 -172 1,34 11,6 81 14,5 0572 98 627 -56 0.1161 -51 0413 -178 1,36 11,5 79 15,0 0,568 90 607 -63 0,1180 -55 0,410 176 37 11,3 7,7 15,5 0,565 82 589 -70 0,1198 -59 0,408 170 37 11,2 7,6 16,0 0565 73 570 -78 0,1219 -64 0,404 164 37 11,1 7,5 16,5 0,564 65 552 -86 0,1242 -69 0,402 157 36 11,0 7/4 17,0 0564 57 1,548 -92 0.1266 -74 0398 152 1,35 109 7/4 17,5 0564 51 1,554 -98 0.1292 -78 0396 147 1,32 108 7/4 18.0 0,567 47 1,562 -102 0,1319 -81 0,394 143 1,28 10,7 7,6 Semiconductor Group 5o0f 8 Draft D, Jul. 98SIEMENS CFY25 Typical Common Source S-Parameters CFY25-20 (continued) f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S,/S, MAG [GHz] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [cB] [cB] 05 0953 -24 3,987 159 0.0140 74 0,657 -15 049 245 1,0 0921 -30 3,858 153 0.0246 67 0647 -18 053 220 1,5 0892 -39 3,714 146 0.0346 60 0634 -23 056 203 20 0,861 -49 3,583 138 0.0444 55 0,621 -28 0,59 19,1 25 0836 -60 3,484 128 00543 49 0608 -35 O58 181 3.0 0814 -72 3,374 118 0.0621 43 0594 -41 O60 17,4 3,5 0,790 -83 3,254 108 0.0684 38 0,576 -47 O63 168 40 0,768 -94 3,129 99 00736 32 0,557 -53 O67 163 45 0,749 -104 3,007 90 0.0779 27 0,541 -59 O70 15,9 5.0 0,731 -114 2890 82 0.0810 22 0,527 -65 0,74 15,5 55 0,714 -124 2776 73 00844 18 O515 -72 O78 15,2 6,0 0,699 -133 2662 65 0.0863 14 0505 -78 O83 149 65 0,683 -141 2556 57 0.0880 10 0,498 -84 088 146 7,0 0669 -149 2458 50 00893 6 0492 -89 O93 144 7,5 0,657 -157 2374 42 0.0904 3 0486 -94 O98 142 8.0 0645 -165 2299 35 0.0918 0 0480 -99 1,02 140 13,1 85 0,632 -173 2.233 28 0.0933 -2 0,474 -103 1,07 138 12,2 90 0620 179 2174 21 00945 -5 0467 -108 1,11 136 11,6 95 0609 171 2120 14 0.0960 -8 0459 -112 1,15 134 11,1 10,0 0600 163 2071 7 0,0976 -10 0,453 -118 1,18 13,3 10,7 10,5 0592 154 2026 0 0,0999 -13 0,446 -123 1,21 13,1 10,4 11,0 0586 146 1,984 -7 0,1006 -16 0,441 -129 1,23 129 10,1 11,5 0579 138 1,947 -14 0.1026 -19 0436 -136 1,24 128 98 12.0 0574 130 1,910 -21 0,1047 -22 0432 -142 125 126 96 125 0571 123 1,876 -29 0,1066 -25 0,428 -149 1,26 125 94 13,0 0566 115 1,842 -36 0,1088 -28 0425 -155 1,27 123 92 13,5 0563 107 1,806 -43 0,1108 -32 0,424 -161 28 121 90 14.0 0,561 99 774 -50 0,1140 -35 0,422 -167 1,27 11,9 88 14,5 0,559 91 745 -57 0,1170 -39 0,421 -173 26 = 611,7 8,7 15,0 0556 83 19 -64 00,1199 -43 0,419 -179 26 611,6 8,5 15,5 0556 75 4698 -72 0,1229 -48 O417 175 24 =611,4 8,4 16,0 0,556 66 4676 -79 0,1257 -53 0,414 168 23 6 11,2 8,3 16,5 0,557 58 653 -87 00,1286 -58 0,412 162 23 =11,1 8,2 17,0 0,559 50 17,5 0,561 45 18,0 0,565 40 4646 -93 00,1320 -63 0,410 157 4649 -99 0,1350 -67 0,409 152 656 -103 0,1376 -71 0,407 148 20) =611,0 8,3 16 10,9 8,4 13 10,8 8,6 Ss ss si ssi si ss ss so so So sas ss sso so Semiconductor Group 6 of 8 Draft D, Jul. 98SIEMENS CFY25 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRe/ Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Example: Ordering Code: @.......... CFY25- (nnl) (ql) (nnl): Noise/Gain/Power Level (ql): Quality Level Ordering Code: Q62703F119 CFY25-20P For CFY25, Noise/Gain/Power Level 20P: NF < 2.1cB, G, > 8.5 dB, P,,, > 14 dBm @ 12 GHz in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www .siemens.de/semiconductor/products/35/353 .htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: Semiconductor Group +4+89 6362 4480 +489 6362 5568 martin. wimmers@siemens-scg.com Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich 7ots Draft D, Jul. 98SIEMENS CFY25 Micro-X Package _ 41,0240, $ ae KY 1 DN fr s FO {JF a! -4 b Nate Bow : | o T $ 1,78 39 * biz og = - Q al -_ o af. O1,6520,1 Semiconductor Group Published by Siemens Semiconductors, High Frequency Products Marketing, P.G.Box 801709, D-81617 Munich. Siemens AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens Semiconductors is a certified CECC and Q89000 manufacturer (this includes ISO 9000). 8of 8 Draft D, Jul. 98