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© 1990, 1993, 1995
MOS INTEGRATED CIRCUIT
µ
PD431000A
1M-BIT CMOS STATIC RAM
128K-WORD BY 8-BIT
DATA SHEET
Document No. M11657EJ9V0DS00 (9th edition)
Date Published November 2000 NS CP (K)
Printed in Japan
The mark ★ shows major revised points.
Description
The
µ
PD431000A is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.
The
µ
PD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In
addition to this, A and B versions are low voltage operations.
The
µ
PD431000A is packed in 32-pin plastic DIP, 32-pin plastic SOP and 32-pin plastic TSOP (I) (8 × 13.4 mm)
and (8 × 20 mm).
Features
• 131,072 words by 8 bits organization
• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
• Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)
• Low VCC data retention: 2.0 V (MIN.)
• Output Enable input for easy application
• Two Chip Enable inputs: /CE1, CE2
Part number Access t i m e Operating suppl y Operating ambient Supply c urrent
ns (MAX .) voltage temperature At operati ng At standby At data retention
V °C mA (MAX.)
µ
A (MAX.)
µ
A (MAX.) Note1
µ
PD431000A-xxL 70, 85 4.5 to 5.5 0 to 70 70 100 15
µ
PD431000A-xxLL 20 3
µ
PD431000A-Axx 70 Note2, 100 3.0 to 5.5 35 Note3 13 Note5
µ
PD431000A-Bxx 70 Note2, 120, 150 2.7 to 5.5 30 Note4 11 Note6
Notes 1. TA ≤ 40 °C
2. VCC = 4.5 to 5.5 V
3. 70 mA (VCC > 3.6 V)
4. 70 mA (VCC > 3.3 V)
5. 20
µ
A (VCC > 3.6 V)
6. 20
µ
A (VCC > 3.3 V)
Data Sheet M11657EJ9V0DS
2
µ
PD431000A
Ordering Information
Part number Package Access t i m e Operating suppl y Operating ambient Remark
ns (MAX .) voltage temperature
V°C
µ
PD431000ACZ-70L 32-PIN PLA STIC DI P 70 4.5 to 5.5 0 to 70 L version
µ
PD431000ACZ-85L (15.24mm (600)) 85
µ
PD431000ACZ-70LL 70 LL version
µ
PD431000ACZ-85LL 85
µ
PD431000AGW-70L 32-PIN PLA STIC SO P 70 4.5 to 5.5 L version
µ
PD431000AGW-85L (13.34 mm (525)) 85
µ
PD431000AGW-70LL 70 LL version
µ
PD431000AGW-85LL 85
µ
PD431000AGW-A10 100 3.0 to 5.5 A versi on
µ
PD431000AGW-B12 120 2.7 to 5.5 B versi on
µ
PD431000AGW-B15 150
µ
PD431000AGZ-85L-KJ H 32-PIN PLA STIC TSOP(I) 85 4.5 t o 5.5 L version
µ
PD431000AGZ-70LL-KJ H (8x20) (Normal bent ) 70 LL version
µ
PD431000AGZ-85LL-KJH 85
µ
PD431000AGZ-B15-K JH 150 2.7 to 5.5 B versi on
µ
PD431000AGZ-70LL-KK H 32-PIN PLA STIC TSOP(I) 70 4.5 t o 5.5 LL version
µ
PD431000AGZ-B15-K K H (8x20) (Revers e bent ) 150 2.7 to 5.5 B version
µ
PD431000AGU-B12-9J H 32-PIN PLA STIC TSOP(I) 120 2.7 to 5.5 B versi on
µ
PD431000AGU-B15-9J H (8x13.4) (Normal bent ) 150
•
•
•
Data Sheet M11657EJ9V0DS 3
µ
PD431000A
Pin Configurations (Marking Side)
/xxx indicates active low signal.
32-PIN PLASTIC DIP (15.24 mm(600))
[
µ
µµ
µ
PD431000ACZ - xxL]
[
µ
µµ
µ
PD431000ACZ - xxLL]
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
GND
V
CC
A15
CE2
/WE
A13
A8
A9
A11
/OE
A10
/CE1
I/O8
I/O7
I/O6
I/O5
I/O4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A0 - A16 : Address inputs
I/O1 - I/O8 : Data inputs / outputs
/CE1, CE2 : Chip Enable 1, 2
/WE : Write Enable
/OE : Output Enable
VCC : Power supply
GND : Ground
NC : No connection
Remark Refer to Package Drawings for the 1-pin index mark.
Data Sheet M11657EJ9V0DS
4
µ
PD431000A
32-PIN PLASTIC SOP (13.34 mm (525))
[
µ
µµ
µ
PD431000AGW - xxL]
[
µ
µµ
µ
PD431000AGW - xxLL]
[
µ
µµ
µ
PD431000AGW - Axx]
[
µ
µµ
µ
PD431000AGW - Bxx]
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
GND
V
CC
A15
CE2
/WE
A13
A8
A9
A11
/OE
A10
/CE1
I/O8
I/O7
I/O6
I/O5
I/O4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A0 - A16 : Address inputs
I/O1 - I/O8 : Data inputs / outputs
/CE1, CE2 : Chip Enable 1, 2
/WE : Write Enable
/OE : Output Enable
VCC : Power supply
GND : Ground
NC : No connection
Remark Refer to Package Drawings for the 1-pin index mark.
Data Sheet M11657EJ9V0DS 5
µ
PD431000A
32-PIN PLASTIC TSOP(I) (8x20) (Normal bent)
[
µ
µµ
µ
PD431000AGZ - xxL - KJH]
[
µ
µµ
µ
PD431000AGZ - xxLL - KJH]
[
µ
µµ
µ
PD431000AGZ - Bxx - KJH]
A11
A9
A8
A13
/WE
CE2
A15
V
CC
NC
A16
A14
A12
A7
A6
A5
A4
/OE
A10
/CE1
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32-PIN PLASTIC TSOP(I) (8x20) (Reverse bent)
[
µ
µµ
µ
PD431000AGZ - xxLL - KKH]
[
µ
µµ
µ
PD431000AGZ - Bxx - KKH]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
/OE
A10
/CE1
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
A3
A11
A9
A8
A13
/WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
A0 - A16 : Address inputs
I/O1 - I/O8 : Data inputs / outputs
/CE1, CE2 : Chip Enable 1, 2
/WE : Write Enable
/OE : Output Enable
VCC : Power supply
GND : Ground
NC : No connection
Remark Refer to Package Drawings for the 1-pin index mark.
•
Data Sheet M11657EJ9V0DS
6
µ
PD431000A
32-PIN PLASTIC TSOP(I) (8x13.4) (Normal bent)
[
µ
µµ
µ
PD431000AGU - Bxx - 9JH]
A11
A9
A8
A13
/WE
CE2
A15
V
CC
NC
A16
A14
A12
A7
A6
A5
A4
/OE
A10
/CE1
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A0 - A16 : Address inputs
I/O1 - I/O8 : Data inputs / outputs
/CE1, CE2 : Chip Enable 1, 2
/WE : Write Enable
/OE : Output Enable
VCC : Power supply
GND : Ground
NC : No connection
Remark Refer to Package Drawings for the 1-pin index mark.
Data Sheet M11657EJ9V0DS 7
µ
PD431000A
Block Diagram
Address buffer
Address
buffer Row
decoder Memory cell array
1,048,576 bits
Input data
controller
A0
A16
I/O8 Column decoder
/CE1
/WE
/OE
CE2
Output data
controller
I/O1
V
CC
GND
Sense amplifier / Switching circuit
Truth Table
/CE1 CE2 /OE /WE Mode I/O Supply c urrent
H×××
Not selected High impedance ISB
×L××
L H H H Output dis abl e ICCA
L H L H Read DOUT
LH×LWrite D
IN
Remark × : VIH or VIL
Data Sheet M11657EJ9V0DS
8
µ
PD431000A
Electrical Specifications
Absolute Maximum Ratings
Parameter Symbol Condition Rating Unit
Supply v ol tage VCC –0.5 Note to +7.0 V
Input / Output vol tage VT–0.5 Note to VCC + 0.5 V
Operating ambient temperat ure T A0 to 70 °C
Storage tem perature Tstg –55 to +125 °C
Note –3.0 V (MIN.) (Pulse width: 30 ns)
Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Symbol Condition
µ
PD431000A-xxL
µ
PD431000A-Axx
µ
PD431000A-Bxx Unit
µ
PD431000A-xxLL
MIN. MAX. MIN. MAX. MIN. MAX.
Supply v ol tage VCC 4.5 5.5 3.0 5.5 2.7 5.5 V
High level i nput volt age VIH 2.2 VCC+0.5 2.2 VCC+0.5 2.2 VCC+0.5 V
Low level input volt age VIL –0.3 Note +0.8 –0.3 Note +0.5 –0.3 Note +0.5 V
Operating ambient temperat ure TA070070070
°C
Note –3.0 V (MIN.) (Pulse width: 30 ns)
Capacitance (TA = 25 °
°°
°C, f = 1 MHz)
Parameter Symbol Test conditions MIN. TYP. MAX. Unit
Input capacitance CIN VIN = 0 V 6 pF
Input / Output capacitanc e CI/O VI/O = 0 V 10 pF
Remarks 1. VIN : Input voltage
VI/O : Input / Output voltage
2. These parameters are periodically sampled and not 100% tested.
Data Sheet M11657EJ9V0DS 9
µ
PD431000A
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) (1/2)
Parameter Symbol Test condit i on
µ
PD431000A-xxL
µ
PD431000A-xxLL
µ
PD431000A-Axx Unit
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
Input leak age ILI VIN = 0 V to VCC –1.0 +1.0 –1.0 +1.0 –1.0 +1.0
µ
A
current
I/O leakage ILO VI/O = 0 V to VCC, –1.0 +1.0 –1.0 +1.0 –1.0 +1.0
µ
A
current /CE1 = VIH or CE2 = VIL
or /WE = VIL or /OE = VIH
Operating ICCA1 /CE1 = VIL, CE2 = VIH, 4070 4070 4070mA
supply current II/O = 0 mA
Minimum cycle time VCC ≤ 3.6 V – – 35
ICCA2 /CE1 = VIL, CE2 = VIH, II/O = 0 mA,151515
Cycle time = ∞VCC ≤ 3.6 V – – 8
ICCA3 /CE1 ≤ 0.2 V, CE2 ≥ VCC – 0. 2 V , 10 10 10
Cycle time = 1
µ
s, II/O = 0 mA,
VIL ≤ 0.2 V, VIH ≥ VCC – 0.2 V
VCC ≤ 3.6 V – – 8
Standby ISB /CE1 = VIH or CE2 = VIL 333mA
supply current VCC ≤ 3.6 V – – 2
ISB1 /CE1 ≥ VCC − 0.2 V, 2 100 1 20 1 20
µ
A
CE2 ≥ VCC − 0.2 V VCC ≤ 3.6 V – – 0.5 13
ISB2 CE2 ≤ 0.2 V 2 100 1 20 1 20
VCC ≤ 3.6 V – – – – 0.5 13
High level VOH1 IOH = –1.0 mA, VCC ≥ 4.5 V 2.4 2.4 2.4 V
output vol tage IOH = –0.5 mA – – 2. 4
VOH2 IOH = –0.02 mA – – VCC–
0.1
Low level V OL1 IOL = 2.1 mA, V CC ≥ 4.5 V 0.4 0. 4 0.4 V
output vol tage IOL = 1.0 mA – – 0. 4
VOL2 IOL = 0.02 mA – – 0. 1
Remarks 1. VIN : Input voltage
VI/O : Input / Output voltage
2. These DC characteristics are in common regardless of package types and access time.
•
•
Data Sheet M11657EJ9V0DS
10
µ
PD431000A
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) (2/2)
Parameter Symbol Test c ondi t i on
µ
PD431000A-Bxx Unit
MIN. TYP. MAX.
Input leak age current ILI VIN = 0 V to VCC –1.0 +1.0
µ
A
I/O leakage current ILO VI/O = 0 V to VCC, /CE1 = VIH or CE2 = VIL –1.0 +1.0
µ
A
or /WE = VIL or /OE = VIH
Operating suppl y current ICCA1 /CE1 = VIL, CE2 = VIH, II/O = 0 mA 40 70 mA
Minimum cycle time VCC ≤ 3.3 V 30
ICCA2 /CE1 = VIL, CE2 = VIH, II/O = 0 mA, 15
Cycle time = ∞VCC ≤ 3.3 V 7
ICCA3 /CE1 ≤ 0.2 V, CE2 ≥ VCC – 0. 2 V , 10
Cycle time = 1
µ
s, II/O = 0 mA,
VIL ≤ 0.2 V, VIH ≥ VCC – 0.2 V VCC ≤ 3.3 V 7
Standby supply current ISB /CE1 = VIH or CE2 = VIL 3mA
VCC ≤ 3.3 V 2
ISB1 /CE1 ≥ VCC − 0.2 V, CE2 ≥ VCC − 0.2 V 1 20
µ
A
VCC ≤ 3.3 V 0.5 11
ISB2 CE2 ≤ 0.2 V 1 20
VCC ≤ 3.3 V 0.5 11
High level output vol tage VOH1 IOH = –1.0 mA, VCC ≥ 4.5 V 2.4 V
IOH = –0.5 mA 2.4
VOH2 IOH = –0.02 mA VCC–0.1
Low level out put voltage VOL1 IOL = 2.1 mA, VCC ≥ 4. 5 V 0.4 V
IOL = 1.0 mA 0.4
VOL2 IOL = 0.02 mA 0.1
Remarks 1. VIN : Input voltage
VI/O : Input / Output voltage
2. These DC characteristics are in common regardless of package types and access time.
•
•
Data Sheet M11657EJ9V0DS 11
µ
PD431000A
AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
AC Test Conditions
[
µ
µµ
µ
PD431000A-70L,
µ
µµ
µ
PD431000A-85L,
µ
µµ
µ
PD431000A-70LL,
µ
µµ
µ
PD431000A-85LL]
Input Waveform (Rise and Fall Time ≤
≤≤
≤ 5 ns)
Test points1.5 V 1.5 V
2.2 V
0.8 V
Output Waveform
Test points1.5 V 1.5 V
Output Load
AC characterist i cs shoul d be measured wit h the followi ng output load c ondi tions.
Figure 1 Figure 2
(tAA, tCO1, tCO2, tOE, tOH)(t
LZ1, tLZ2, tOLZ, tHZ1, tHZ2, tOHZ, tWHZ, tOW)
+5 V
I/O (Output)
1.8 kΩ
5 pF
C
L
990 Ω
+5 V
I/O (Output)
1.8 kΩ
100 pF
C
L
990 Ω
Remark CL includes capacitance of the probe and jig, and stray capacitance.
[
µ
µµ
µ
PD431000A-A10,
µ
µµ
µ
PD431000A-B12,
µ
µµ
µ
PD431000A-B15]
Input Waveform (Rise and Fall Time ≤
≤≤
≤ 5 ns)
Test points1.5 V 1.5 V
2.2 V
0.5 V
Output Waveform
Test points1.5 V 1.5 V
Output Load
AC characteristics should be measured with the following output load conditions.
Part number Output load c ondi tion
tAA, tCO1, tCO2, tOE, tOH tLZ1, tLZ2, tOLZ, tHZ1, tHZ2, tOHZ, tWHZ, tOW
µ
PD431000A-A10, 431000A-B12 1TTL + 50 pF 1TTL + 5 pF
µ
PD431000A-B15 1TTL + 100 pF 1TTL + 5 pF
Data Sheet M11657EJ9V0DS
12
µ
PD431000A
Read Cycle (1/2)
Parameter Symbol VCC ≥ 4.5 V VCC ≥ 3.0 V Unit Condition
µ
PD431000A-70
µ
PD431000A-Axx
µ
PD431000A-Bxx
µ
PD431000A-85
µ
PD431000A-A10
MIN. MAX. MIN. MAX. MIN. MAX.
Read cycle time tRC 70 85 100 ns
Address access time tAA 70 85 100 ns Note
/CE1 access time tCO1 70 85 100 ns
CE2 access time tCO2 70 85 100 ns
/OE to output val i d tOE 35 45 50 ns
Output hold f rom address c hange tOH 10 10 10 ns
/CE1 to out put in low im pedance tLZ1 10 10 10 ns
CE2 to output in low im pedance tLZ2 10 10 10 ns
/OE to output in l ow i m pedance tOLZ 555ns
/CE1 to out put in high im pedance tHZ1 25 30 35 ns
CE2 to output in high im pedance tHZ2 25 30 35 ns
/OE to output in hi gh i m pedance tOHZ 25 30 35 ns
Note See the output load.
Remark These AC characteristics are in common regardless of package types and L, LL versions.
Read Cycle (2/2)
Parameter Symbol VCC ≥ 2.7 V Unit Condition
µ
PD431000A-B12
µ
PD431000A-B15
MIN. MAX. MIN. MAX.
Read cycle time tRC 120 150 ns
Address access time tAA 120 150 ns Note
/CE1 access time tCO1 120 150 ns
CE2 access time tCO2 120 150 ns
/OE to output val i d tOE 60 70 ns
Output hold f rom address c hange tOH 10 10 ns
/CE1 to out put in low im pedance tLZ1 10 10 ns
CE2 to output in low im pedance tLZ2 10 10 ns
/OE to output in l ow i m pedance tOLZ 55ns
/CE1 to out put in high im pedance tHZ1 40 50 ns
CE2 to output in high im pedance tHZ2 40 50 ns
/OE to output in hi gh i m pedance tOHZ 40 50 ns
Note See the output load.
Remark These AC characteristics are in common regardless of package types.
Data Sheet M11657EJ9V0DS 13
µ
PD431000A
Read Cycle Timing Chart
t
HZ2
t
RC
t
OH
t
HZ1
t
LZ2
t
CO2
t
LZ1
t
CO1
t
AA
High impedance Data out
CE2 (Input)
/CE1 (Input)
Address (Input)
I/O (Output)
t
OLZ
t
OE
t
OHZ
/OE (Input)
Remark In read cycle, /WE should be fixed to high level.
Data Sheet M11657EJ9V0DS
14
µ
PD431000A
Write Cycle (1/2)
Parameter Symbol VCC ≥ 4.5 V VCC ≥ 3.0 V Unit Condition
`
µ
PD431000A-70
µ
PD431000A-Axx
µ
PD431000A-Bxx
µ
PD431000A-85
µ
PD431000A-A10
MIN. MAX. MIN. MAX. MIN. MAX.
Write cycle time tWC 70 85 100 ns
/CE1 to end of wri te tCW1 55 70 80 ns
CE2 to end of wri te tCW2 55 70 80 ns
Address valid t o end of wri te tAW 55 70 80 ns
Address setup ti me tAS 000ns
Write puls e wi dt h tWP 50 60 60 ns
Write recovery t i me t WR 550ns
Data val i d to end of write tDW 35 35 60 ns
Data hold ti m e tDH 000ns
/WE to output in high i m pedance tWHZ 25 30 35 ns Note
Output active f rom end of write tOW 555ns
Note See the output load.
Remark These AC characteristics are in common regardless of package types and L, LL versions.
Write Cycle (2/2)
Parameter Symbol VCC ≥ 2.7 V Unit Condition
µ
PD431000A-B12
µ
PD431000A-B15
MIN. MAX. MIN. MAX.
Write cycle time tWC 120 150 ns
/CE1 to end of wri te tCW1 100 120 ns
CE2 to end of wri te tCW2 100 120 ns
Address valid t o end of wri te tAW 100 120 ns
Address setup ti me tAS 00ns
Write puls e wi dt h tWP 85 100 ns
Write recovery t i me tWR 00ns
Data val i d to end of write tDW 60 80 ns
Data hold ti m e tDH 00ns
/WE to output in high i m pedance tWHZ 40 50 ns Note
Output active f rom end of write tOW 55ns
Note See the output load.
Remark These AC characteristics are in common regardless of package types.
Data Sheet M11657EJ9V0DS 15
µ
PD431000A
Write Cycle Timing Chart 1 (/WE Controlled)
t
WC
t
CW1
t
WHZ
t
DW
t
DH
t
OW
Indefinite data out High
impe-
dance
High
impe-
dance
Data in Indefinite data out
Address (Input)
/CE1 (Input)
I/O (Input / Output)
CE2 (Input)
t
CW2
t
AW
t
WP
t
AS
t
WR
/WE (Input)
Cautions 1. During address transition, at least one of pins /CE1, CE2, /WE should be inactivated.
2. Do not input data to the I/O pins while they are in the output state.
Remarks 1. Write operation is done during the overlap time of a low level /CE1, /WE and a high level CE2.
2. If /CE1 changes to low level at the same time or after the change of /WE to low level, or if CE2
changes to high level at the same time or after the change of /WE to low level, the I/O pins will
remain high impedance state.
3. When /WE is at low level, the I/O pins are always high impedance. When /WE is at high level,
read operation is executed. Therefore /OE should be at high level to make the I/O pins high
impedance.
•
Data Sheet M11657EJ9V0DS
16
µ
PD431000A
Write Cycle Timing Chart 2 (/CE1 Controlled)
t
WC
t
AS
t
CW1
t
DW
t
DH
Data in
High impedance
Address (Input)
/CE1 (Input)
I/O (Input) High
impedance
CE2 (Input)
t
CW2
t
AW
t
WP
t
WR
/WE (Input)
Cautions 1. During address transition, at least one of pins /CE1, CE2, /WE should be inactivated.
2. Do not input data to the I/O pins while they are in the output state.
Remark Write operation is done during the overlap time of a low level /CE1, /WE and a high level CE2.
•
Data Sheet M11657EJ9V0DS 17
µ
PD431000A
Write Cycle Timing Chart 3 (CE2 Controlled)
t
WC
t
AS
t
CW2
t
DW
t
DH
Data in
High impedance
Address (Input)
CE2 (Input)
I/O (Input) High
impedance
/CE1 (Input)
t
CW1
t
AW
t
WP
t
WR
/WE (Input)
Cautions 1. During address transition, at least one of pins /CE1, CE2, /WE should be inactivated.
2. Do not input data to the I/O pins while they are in the output state.
Remark Write operation is done during the overlap time of a low level /CE1, /WE and a high level CE2.
•
Data Sheet M11657EJ9V0DS
18
µ
PD431000A
Low VCC Data Retention Characteristics (TA = 0 to 70 °
°°
°C)
Parameter Symbol Test Condit i on
µ
PD431000A-xxL
µ
PD431000A-xxLL
µ
PD431000A-Axx
µ
PD431000A-Bxx
Unit
MIN. TYP. MAX. MIN. TYP. MAX.
Data retention
supply voltage
VCCDR1 /CE1 ≥ VCC − 0.2 V,
CE2 ≥ VCC − 0.2 V
2.0 5.5 2.0 5.5 V
VCCDR2 CE2 ≤ 0.2 V 2.0 5.5 2.0 5.5
Data retention
supply current
ICCDR1 VCC = 3.0 V, / CE 1 ≥ VCC − 0. 2 V ,
CE2 ≥ VCC − 0.2 V or CE2 ≤ 0.2 V
150 Note1 0.5 10 Note2
µ
A
ICCDR2 VCC = 3.0 V, CE2 ≤ 0.2 V 1 50 Note1 0.5 10 Note2
Chip deselec tion
to data retention
mode
tCDR 00ns
Operation
recovery time
tR55ms
Notes 1. 15
µ
A (TA ≤ 40 °C)
2. 3
µ
A (TA ≤ 40 °C)
Data Sheet M11657EJ9V0DS 19
µ
PD431000A
Data Retention Timing Chart
(1) /CE1 Controlled
V
IH
(MIN.)
V
CCDR
(MIN.)
V
IL
(MAX.)
V
CC
/CE1
/CE1 ≥ V
CC
– 0.2 V
GND
4.5 V
Note
t
CDR
Data retention mode t
R
Note A version : 3.0 V, B version : 2.7 V
Remark On the data retention mode by controlling /CE1, the input level of CE2 must be CE2 ≥ VCC − 0.2 V or
CE2 ≤ 0.2 V. The other pins (Address, I/O, /WE, /OE) can be in high impedance state.
(2) CE2 Controlled
V
IH
(MIN.)
V
CCDR
(MIN.)
V
IL
(MAX.)
V
CC
CE2
CE2 ≤ 0.2 V
GND
4.5 V
Note
t
CDR
Data retention mode t
R
Note A version : 3.0 V, B version : 2.7 V
Remark The other pins (/CE1, Address, I/O, /WE, /OE) can be in high impedance state.
Data Sheet M11657EJ9V0DS
20
µ
PD431000A
Package Drawings
32-PIN PLASTIC DIP (15.24mm(600))
NOTES
1. Each lead centerline is located within 0.25 mm of
its true position (T.P.) at maximum material condition.
ITEM MILLIMETERS
A 40.64 MAX.
B 1.27 MAX.
C 2.54 (T.P.)
D 0.50±0.10
F 1.1 MIN.
G 3.2±0.3
J 5.08 MAX.
K 15.24 (T.P.)
M 0.25
N 0.25
H 0.51 MIN.
I 4.31 MAX.
L 13.2+0.10
−0.05
2. Item "K" to center of leads when formed parallel.
P32C-100-600A-2
R 0 - 15°
P 0.9 MIN.
32 17
116
NB
I
MR
M
C
D
F
H
G
A
JK
L
P
Data Sheet M11657EJ9V0DS 21
µ
PD431000A
32 17
116
S
32-PIN PLASTIC SOP (13.34 mm (525))
NOTE
Each lead centerline is located within 0.12 mm of
its true position (T.P.) at maximum material condition.
ITEM MILLIMETERS
C0.78 MAX.
B20.61 MAX.
A
1.27 (T.P.)
E 0.15±0.05
F 2.95 MAX.
G 2.7
H 14.1±0.3
I11.3
J1.4±0.2
D 0.40+0.10
−0.05
M0.12
N0.10
L 0.8±0.2
K 0.20+0.10
−0.05
P3°+7°
−3°
P32GW-50-525A-1
K
L
G
P
DM
B
J
detail of lead end
SN
A
H
I
M
F
E
C
Data Sheet M11657EJ9V0DS
22
µ
PD431000A
Notice of change in 32-pin plastic TSOP (I) (8 ×
××
× 20) standoff height
We are changing the 32-pin plastic TSOP (I) (8 × 20) standoff height 0.05 ± 0.05 mm (low standoff height) to 0.1 ±
0.05 mm (high standoff height). Each lot version is identified by the fifth character of the lot number.
Difference between high standoff height and low standoff height.
Detail of lead end
Normal bent
High standoff height: Q = 0.1 ± 0.05 mm
Low standoff height: Q = 0.05 ± 0.05 mm
Reverse bent
Q
Q
Identification of each lot version
Each lot version is identified by the fifth character of the lot number.
Fifth c haracter of the lot num ber Lot v ers i on Standoff hei ght
R R version 0.1 ± 0.05 mm (Hi gh standoff hei ght)
H H vers i on 0.05 ± 0.05 mm (Low s tandoff hei ght)
Marking Example
D431000A
Lot number
JAPAN
XXXX XXXX
Data Sheet M11657EJ9V0DS 23
µ
PD431000A
High standoff height
NOTES
32-PIN PLASTIC TSOP(I) (8x20)
ITEM MILLIMETERS
A
B
C
E
I
8.0±0.1
0.5 (T.P.)
0.1±0.05
0.45 MAX.
K
1.2 MAX.
18.4±0.1
0.145±0.05
F
0.10M
D 0.22±0.05
1. Each lead centerline is located within 0.10 mm of
its true position (T.P.) at maximum material condition.
2. "A" excludes mold flash. (Includes mold flash : 8.3 mm MAX.)
R
L
0.97±0.08G
L 0.5
0.10N
P 20.0±0.2
Q3°+5°
−3°
0.25R
S32GZ-50-KJH1-2
S 0.60±0.15
J 0.8±0.2
G
F
ES
Q
detail of lead end
1
16
32
17
SN
SC
DM
M
B
A
P
K
I J
Data Sheet M11657EJ9V0DS
24
µ
PD431000A
High standoff height
NOTES
32-PIN PLASTIC TSOP(I) (8x20)
ITEM MILLIMETERS
A
B
C
E
I
8.0±0.1
0.5 (T.P.)
0.1±0.05
0.45 MAX.
K
1.2 MAX.
18.4±0.1
0.145±0.05
F
0.10M
D 0.22±0.05
1. Each lead centerline is located within 0.10 mm of
its true position (T.P.) at maximum material condition.
2. "A" excludes mold flash. (Includes mold flash : 8.3 mm MAX.)
C
R
DM
M
G
0.97±0.08G
L 0.5
0.10N
P 20.0±0.2
Q3°+5°
−3°
0.25R
S32GZ-50-KKH1-2
S 0.60±0.15
J 0.8±0.2
B
F
E
Q
S
L
detail of lead end
1
16
32
17
S
A
SN
K
I
P
J
Data Sheet M11657EJ9V0DS 25
µ
PD431000A
Low standoff height
32-PIN PLASTIC TSOP(I) (8x20)
S32GZ-50-KJH-4
ITEM MILLIMETERS
NOTES
1. Each lead centerline is located within 0.08 mm of
its true position (T.P.) at maximum material condition.
D
I 18.4±0.2
K 0.125
L 0.5±0.1
detail of lead end
R
B
C 0.5 (T.P.)
0.45 MAX.
D
G 1.02 MAX.
0.20±0.10
J 0.8±0.2
Q 0.05±0.05
R
S 1.1 MAX.
5°±5°
+0.10
−0.05
2. "A" excIudes mold flash. (Includes mold flash : 8.3 mm MAX.)
M
M
Q
S
A 8.0±0.1
H 19.0±0.2
M
N 0.10
0.08
P 20.0±0.2
1
16
32
17
SN
S
CB
G
A
L
K
P
IJ
H
Data Sheet M11657EJ9V0DS
26
µ
PD431000A
Low standoff height
32-PIN PLASTIC TSOP(I) (8x20)
S32GZ-50-KKH-4
ITEM MILLIMETERS
NOTES
1. Each lead centerline is located within 0.08 mm of
its true position (T.P.) at maximum material condition.
D
I 18.4±0.2
K 0.125
L 0.5±0.1
detail of lead end
R
CB
B
C 0.5 (T.P.)
0.45 MAX.
D
G 1.02 MAX.
0.20±0.10
J 0.8±0.2
Q 0.05±0.05
R
S 1.1 MAX.
5°±5°
+0.10
–0.05
2. "A" excIudes mold flash. (Includes mold flash : 8.3 mm MAX.)
M
MN
Q
G
A 8.0±0.1
H 19.0±0.2
M
N 0.10
0.08
P 20.0±0.2
S
1
16
32
17
S
S
A
K
P
IJ
HL
Data Sheet M11657EJ9V0DS 27
µ
PD431000A
32-PIN PLASTIC TSOP(I) (8x13.4)
NOTES
1. Each lead centerline is located within 0.08 mm of
its true position (T.P.) at maximum material condition.
ITEM MILLIMETERS
P32GU-50-9JH-2
B 0.45 MAX.
C 0.5 (T.P.)
detail of lead end
A 8.0±0.1
H 12.4±0.2
B
T
D 0.22±0.05
G 1.0±0.05
I 11.8±0.1
J 0.8±0.2
K
L 0.5
M 0.08
N 0.08
Q 0.1±0.05
P 13.4±0.2
S 1.2 MAX.
R3°
T 0.25
U 0.6±0.15
+5°
−3°
2. "A" excludes mold flash. (Includes mold flash : 8.3 mm MAX.)
M
U
L
R
Q
S
DM
C
G
J
0.145+0.025
−0.015
1
16
32
17
S
SN
K
H
P
IA
Data Sheet M11657EJ9V0DS
28
µ
PD431000A
Recommended Soldering Conditions
The following conditions must be met when soldering conditions of the
µ
PD431000A.
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
Types of Surface Mount Device
µ
PD431000AGW-xxL: 32-PIN PLASTIC SOP (13.34 mm (525))
µ
PD431000AGW-xxLL: 32-PIN PLASTIC SOP (13.34 mm (525))
µ
PD431000AGW-Axx: 32-PIN PLASTIC SOP (13.34 mm (525))
µ
PD431000AGW-Bxx: 32-PIN PLASTIC SOP (13.34 mm (525))
µ
PD431000AGZ-xxL-KJH: 32-PIN PLASTIC TSOP(I) (8x20) (Normal bent)
µ
PD431000AGZ-xxLL-KJH: 32-PIN PLASTIC TSOP(I) (8x20) (Normal bent)
µ
PD431000AGZ-xxLL-KKH: 32-PIN PLASTIC TSOP(I) (8x20) (Reverse bent)
µ
PD431000AGZ-Bxx-KJH: 32-PIN PLASTIC TSOP(I) (8x20) (Normal bent)
µ
PD431000AGZ-Bxx-KKH: 32-PIN PLASTIC TSOP(I) (8x20) (Reverse bent)
µ
PD431000AGU-Bxx-9JH: 32-PIN PLASTIC TSOP(I) (8x13.4) (Normal bent)
Please consult with our sales offices.
Types of Through Hole Mount Device
µ
PD431000ACZ-xxL: 32-PIN PLASTIC DIP (15.24 mm(600))
µ
PD431000ACZ-xxLL: 32-PIN PLASTIC DIP (15.24 mm(600))
Soldering proc es s Soldering c ondi t i ons
Wave solderi ng (Onl y to leads ) Solder temperature: 260 °C or below,
Flow time: 10 seconds or below
Partial heating met hod Pin tem perat ure : 300 °C or below,
Time: 3 s econds or below (P er one l ead)
Caution Do not jet molten solder on the surface of package.
•
Data Sheet M11657EJ9V0DS 29
µ
PD431000A
[MEMO]
Data Sheet M11657EJ9V0DS
30
µ
PD431000A
[MEMO]
Data Sheet M11657EJ9V0DS 31
µ
PD431000A
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to V
DD
or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
µ
PD431000A
M8E 00. 4
The information in this document is current as of November, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
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patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
