SAMSUNG SEMICONDUCTOR INC TIP120 LYE O 9796442 OCO773a4 3 ~ NPN EPIAXIAL SILICO DARLINGTON TRANSISTOR % MEDIUM POWER LINEAR SWITCHING APPLICATIONS Complement to TIP125 ABSOLUTE MAXIMUM RATINGS (T, =25C) T-F3-27. T0-220 Characteristic _Symbol Rating Unit Collctor-Base Voltage Veso 60 Vv Collector-Emitter Voltage Veco 60 Vv Emitter-Base Vottage Veno 5 Vv Collector Current (DC) file A Collector Current (Pulse) Ic 8 A Base Current la 120 +.) mA Collector Dissipation (T=25C) | Pe 65 w ; Collector Dissipation (Ta=25C) | Pc 2 Ww 1. Base 2. Collector 3, Emitter Junction Temperature Tj 150 C . Storage Temperature - : Tstg -65/150 C ELECT RICAL CHARACTERISTICS (T, =25C) Characteristic Symbol Test Condition Min Max | Unit Collector Emitter Sustaining Voltage BV cto (sus) k= 100mA, [s=0 60 . Vv Collector Cutoff Current kee Vee=30V, lb=0 vs 0.6 mA Collector Cutoff Current lopo Ves =60V, le=0 0.2 mA Emitter Cutoff Current lesa Vea=5V, lo=0 . 2.0 mA *DC Current Gain Hee Vce=3V, {=0.5A 1000 . . Vce=3V, Io=3A 1000 . *Collector-Emitter Saturation Voltage Vee (sat) Ic=3A, lp=12mMA 2.0 Vv . b=5A, ls=20mA . 4.0 Vv *Base-Emitter On Voltage Vee (on) Vce=3V, b= 3A 2.5 Vv Output Capacitance Cob Ves=1OV, le=0, f=0.1MHz : 200 pF *Pulse Test: PWS300us, Duty Cycle<2% Cc * RiS8k2 , R.51208 | cee SAMSUNG SEMICONDUCTOR 309SAMSUNG SEMICONDUCTOR INC -BYE_ OD Bo ecesz42 oo0r735-5 Oo NPN EPITAXIAL SILICON TIP120 DARLINGTON TRANSISTOR - = y % Ty- 338-249 DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SA g k a > z 5 3 5 g z a 2 ; g - i 2 . a 2 Aa fotA}, COLLECTOR CURRENT , tf}, COLLECTOR CURRENT POWER DERATING SAFE OPERATING AREA 3 5 5 - g g Boo . 80 100 140 180 180 200 Tef{*C), CASE. TEMPERATURE - , Vee(}, COLLECTOR-EMITTER VOLTAGE OUTPUT AND INPUT CAPACITANCE REVERSE VOLTAGE CotipF} CalpF), CAPACITANCE 01 860308 3.05.0 10 30 50 100 VealV}, COLLECTOR-BASE VOLTAGE Vest}, EMITTER-BASE VOLTAGE ce SAMSUNG SEMICONDUCTOR , 310SAMSUNG SEMICONDUCTOR INC. hue o ff ?9b4L42 000773b. 2 SS NPN EPITAXIAL SILICON TIP121 DARLINGTON TRANSISTOR . T-33-29 . MEDIUM POWER LINEAR SWITCHING APPLICATIONS * Complement to TIP126 70-220 ABSOLUTE MAXIMUM RATINGS (Ta=25C) Characteristic: Symbol Rating Unit Collector-Base Voltage Vewo 80 Vv Collector-Emitter Voltage Vceo 80 Vv Emitter-Base Voitage Veo 5 Vv Base Current le 120, JwemA Collector Current (DC). Ic 5 A Collector Current (Pulse) le 8 A Collector Dissipation (T,=25C) Po . 2 Ww 1. Base 2. Collector 3. Emitter Collector Dissipation. (Tc=25C) | Pe 65 Ww . Junction Temperature Tj 150 C ~ Storage Temperature Tstg 65-1.50 C * Refer to TIP120 for graphs ELECTRICAL CHARACTERISTICS (Tc =25C) Characteristic Symbol Test Condition Min Max Unit Collector-Emitter Sustaining Voltage | BVceo (sus) | <= 100mA, is=0 80 NV Collector Cutoff Current lepo Vce=80V, le=O 0.2 mA Collector Cutoff Current lceo Vce=40V, Ip=0 , 0.5 mA Emitter Cutoff Current leso Vea=5V, lc=O 2 mA *DC Current Gain hee Vce=3V, lc=0.5A 1000 . Vce=3V, bc=3A 1000 Collector Emitter Saturation Voltage | Vce (sat) k=3A, lp=12mA : 2 Vv . Ic=5A, lp=20mA / - 4 7 *Base-Emitter On Voltage Vae(on) Vee=3V, lo =3A ; . 2.5 Vv Collector Output Capacitance Cob Voce IOV, Ie=O0, f=0.1MHz : ; 200 pF- * Pulse Test: PW<300ys, Duty Cycle<2% Cc S . oot ; Abide Ah wT YR" R, R Ris8KN b R2=1200 E cEg'samsunc SEMICONDUCTOR - 31 - SAMSUNG SEMICONDUCTOR INC TIP122 wye oO ff 2904142 0002732 -49 NPN EPITAXIAL SILICON >. \ MEDIUM POWER LINEAR SWITCHING APPLICATIONS Complement to TiP127 ABSOLUTE MAXIMUM RATINGS (T; =25C) DARLINGTON TRANSISTOR so T-33-29 TO0-220 - Characteristic. Symbol Rating | Unit Collector-Base Voltage Veso 100 Vv Colector-Emitter Voltage Vero 100 Vv Emitter-Base Voltage _ Veso 5 Vv Base Current Ip j 20 mA Collector Current (DC) Ic 5~ A Collector Current (Pulse) Ie 8 A Collector Dissipation (T,4=25C), Pe 2 Ww Collector Dissipation (Tco=25C) Pe 65 Ww 1, Base 2. Cotlector3. Emitter Junction Temperature ~ Tj 150 C Storage Temperature Tstg = | --65~150 C * Refer to TIP120 for graphs ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic Symbol Test Condition Min Max Unit *Collector-Emitter Sustaining Voltage | BVceo (sus) | le 100mA, ls=0 . 100 Vv Collector Cutoff Current leso Ves=100V, le=0 . 0.2 mA Collector Cutoff Current keeo Vee=50V, =O 0.5 mA Emitter Cutoff Current lead Ves=5V, k=O 2 mA "DC Current Gain Nee Vce=3V, b=0.5A 1000 . i _ | Vee=3V, b=3A , - 1000. : *Cotector Emitter Saturation Voltage | Vce (sat) b=3A, lb=12mA j .- 2 ov . : - o i= 5A, b=20MA 4 Vv *Base-Emitter On Voltage Vaeten) Vee=3V, lo =3A 2.5 Vv Collector Output Capacitance Cob Vea=10V, le=O, f=0.1MHz : 200 pF * Pulse test : PW < 300ps, duty cycle < 2% , - Bo- Ri=8Ka R.41200 312 cE samsune SEMICONDUCTORSAMSUNG SEMICONDUCTOR INC LYE D 5 79464L42 0007738 O i oe PNP EPITAXIAL SILICON FIP125 - . DARLINGTON TRANSISTOR a - T - 33-3) MEDIUM POWER LINEAR SWITCHING APPLICATIONS * Complement to TIP120 TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25C): Characteristic : Symbo! Rating Unit Colfector-Base Voltage , Voeo ~ 60 Vv Collector-Emitter Voltage Voceo -60 v Emitter-Base Voltage Vesa ~5 Vv Base Current: -. ls -120 a mA Collector Current (DC) Ic -5 A Collector Current (Pulse) I ~8 A Collector Dissipation (T,=25C) Po 2 WwW Collector Dissipation (T.=25C} Pe 65 WwW 1. Base 2. Collector 3. Emitter / Junction Temperature Tj 150 C Storage. Temperature - Tstg -65~150 C ELECTRICAL CHARACTERISTICS AT. =25C) Characteristic Symbol Test Condition | > Min Max Unit *Collector-Emitter Sustaining Voltage BVceo (sus) k= -100mA, Ip=0 -60 Vv Collector Cutoff Current kao Ves =6OV, le=O 0.2 mA Collector Cutoff Current Iceo Vee=3OV, Ip=0_ -0.5 mA Emitter Cutoff Current leBo Vee=5V, b=0 : -2 mA * DC Current Gain . fee Vee=3V, Ie=-0.5A 1000 , Vece=3V, k=-3A 1000 * Collector-Emitter Saturation Voitage Vee (sat) Ic=3A, Ia=12mA -2 Vv . . b=5A, e=-20MA . -4].V * Base-Emitter On Voltage . Vee(on) | Vee=-3V, b=-3A -2.5 Vv Output Capacitance Cob Vea=10V, le=0, f=0.1MHz 300 pF. * Pulse Test: PWS300ps, Duty Cycle<x2% Cc eee vv R, R, | RLY=8k0 . Ee R341 200 . ac " ce SAMSUNG SEMICONDUCTOR 7 - - _ 313SAMSUNG SEMICONOUCTOR INC TIP125 L4E OD B escuis g007739 2 i . PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR EEE r = 7-33 -3\ DC. CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE B-36 4 5 2 z 3000 z 30 < 8 3 E e 3-2 & 5 S 1000 +20 g ; z Z se a-15 a 3 ~10 ta 0.5 01 -03 -05 -1 -3 -5 10 -0.1 03-05 -1 -3-5 -10 tA}, COLLECTOR CURRENT folA), COLLECTOR CURRENT POWER DERATING SAFE OPERATING AREA 3 FE EB 4 < & a : 3 3 5 c & -0.3 wi Fr oO 8 ig a eal = 8 -01 a 0 zo 49 60 60 120 140 160 180 200 3-5 +10 -30 =50 -100 Tel*C), CASE TEMPERATURE - Vee(}, COLLECTOR-EMITTER VOLTAGE . ~ OUTPUT AND INPUT CAPACITANCE : vs. REVERSE VOLTAGE mcm wh g z E 9 a < 3 & 3 i -0.1 =03 -1.0. -30-59-10 30-50 -100 Vool}, COLLECTOR BASE VOLTAGE Ves(), EMITTER BASE VOLTAGE . 3t4 : cee SAMSUNG SEMICONDUCTOR