MITSUBISHI SEMICONDUCTORS <HVIC> M81705FP HIGH VOLTAGE HIGH SIDE DRIVER DESCRIPTION M81705FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES FLOATING SUPPLY VOLTAGE ................................... 600V OUTPUT CURRENT ............................................. +150mA -125mA HIGH SIDE DRIVER SOP-8 NC 1 8 NC VCC 2 7 VB IN 3 6 OUT 5 VS GND 4 APPLICATIONS PDP, MOSFET and IGBT module inverter driver for ACservomotor and general purpose. NC:NO INTERNAL CONNECTION Outline 8P2S BLOCK DIAGRAM VCC 2 4 GND 7 VB 6 OUT 5 VS VREG HV LEVEL SHIFT IN 3 PULSE GEN UV DETECT FILTER R Q R INTER LOCK S Mar. 2003 MITSUBISHI SEMICONDUCTORS <HVIC> M81705FP HIGH VOLTAGE HIGH SIDE DRIVER ABSOLUTE MAXIMUM RATINGS Symbol VB VS VBS VOUT VCC VIN dVS/dt PD Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Logic Input Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Conditions Ratings -0.5 ~ 624 Unit V V V VB-24 ~ VB+0.5 -0.5 ~ 24 VS-0.5 ~ VB+0.5 -0.5 ~ 24 -0.5 ~ 5.5 VBS = VB-VS V V V V/ns 50 0.60 -6.0 50 Ta = 25C, On Board Ta > 25C, On Board W mW/C C/W C C -20 ~ 125 -20 ~ 100 -40 ~ 125 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Test conditions VCC High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage Low Side Fixed Supply Voltage VIN Logic Input Voltage VB VS VBS VB > 13.5V VBS = VB-VS Min. VS+13.5 -5 Limits Typ. -- -- Max. VS+20 500 13.5 13.5 -- -- 20 20 V V 0 -- 5 V Unit V V THERMAL DERATING FACTOR CHARACTERISTIC Package Power Dissipation PD [W] 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 Temperature [C] Mar. 2003 MITSUBISHI SEMICONDUCTORS <HVIC> M81705FP HIGH VOLTAGE HIGH SIDE DRIVER ELECTRICAL CHARACTERISTICS (Ta=25C, VCC=VBS (=VB-VS)=15V, unless otherwise specified) Symbol Parameter Test conditions VB=VS=600V Min. -- Limits Typ.* -- Max. 1.0 0.25 0.50 0.75 mA 0.50 0.75 1.00 mA 14.9 -- -- -- -- 0.1 V V V Unit A IFS Floating Supply Leakage Current IBS VBS Standby Current ICC VCC Standby Current VOH VOL High Level Output Voltage VIH High Level Input Threshold Voltage 2.5 3.0 4.0 VIL Low Level Input Threshold Voltage 0.8 1.5 2.0 V IIH IIL High Level Input Bias Current -50 -200 -20 -100 -- -- A A VBSuvr VBS Supply UV Reset Voltage 10.5 11.5 12.5 V VBSuvh VBS Supply UV Hysteresis Voltage 0.2 0.5 0.8 V tVBSuv VBS Supply UV Filter Time -- 5 -- s IOH Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current VO=0V, VIN=0V, PW<10s 40 -- -- mA VO=1V, VIN=5V, PW<10s -- -- -125 IOL1 IOL2 Output Low Level Short Circuit Pulsed Current VO=15V, VIN=5V, PW<10s -- 150 -- mA ROH Output High Level On Resistance IO=-100mA, ROH=(VOH-VO)/IO -- 120 160 ROL1 Output Low Level On Resistance1 VO=1V, ROL1=VO/IO -- 50 60 ROL2 VO=5V, ROL2=VO/IO CL=1000pF between OUT - VS -- 100 100 tdLH Output Low Level On Resistance2 High Side Turn-On Propagation Delay -- 130 500 ns tdHL High Side Turn-Off Propagation Delay CL=1000pF between OUT - VS 100 -- 500 ns tr High Side Turn-On Rise Time CL=1000pF between OUT - VS -- 220 -- ns tf VOth High Side Turn-Off Fall Time ROL1/ROL2 Switching Output Voltage CL=1000pF between OUT - VS -- 1.5 110 -- 4.0 ns V Low Level Output Voltage Low Level Input Bias Current IO=0A IO=0A VIN=5V VIN=0V 2.5 mA * Typ. is not specified. Mar. 2003 MITSUBISHI SEMICONDUCTORS <HVIC> M81705FP HIGH VOLTAGE HIGH SIDE DRIVER TIMING DIAGRAM 1.Input/Output Timing Diagram When input signal is "L", then output signal "H". 2.VBS Supply Under Voltage Lockout Timing Diagram When VBS Supply Voltage keeps lower UV Trip Voltage (VBSuvt = VBSuvr - VBSuvh) for VBS Supply UV Filter Time, output signal becomes "L". And then, VBS Supply Voltage is higher UV Reset Voltage, output signal keeps "L" until next input signal is "L". VBS VBSuvh VBSuvt VBSuvr tVBSuv OUT IN 3.Allowable supply voltage transient Firstly, supply VCC with voltage. Secondly, supply VBS with voltage. In the case of shutting off supply voltage, shut off VBS Supply Voltage firstly. Secondly, shut off VCC Supply Voltage. In case VBS or VCC is started too fast, output signal may be "H". 4.ROL1/ROL2 Switching Output Voltage VOth OUT VOth IN As shown by the solid line of the timing chart, the output on-resistance drops at `VOth' level when the output is in the `L' state (output level falls). Below the `VOth' level, the output level falls more steeply. Mar. 2003 MITSUBISHI SEMICONDUCTORS <HVIC> M81705FP HIGH VOLTAGE HIGH SIDE DRIVER PERFORMANCE CURVES IBS vs. Voltage 1.0 1.0 0.8 0.8 0.6 0.6 IBS (mA) ICC (mA) ICC vs. Voltage 0.4 0.2 0.2 15 18 21 0.0 12 24 VIH vs. Voltage VIL vs. Voltage 2.5 3.5 2.0 3.0 2.5 24 21 24 21 24 1.0 15 18 21 0.5 12 24 15 18 VCC (V) tdLH vs. Voltage tdHL vs. Voltage 300 260 280 240 260 220 tdHL (ns) tdLH (ns) 21 1.5 VCC (V) 240 220 200 12 18 VBS (V) 4.0 2.0 12 15 VCC (V) VIL (V) VIH (V) 0.0 12 0.4 200 180 15 18 VCC (V) 21 24 160 12 15 18 VCC (V) Mar. 2003 MITSUBISHI SEMICONDUCTORS <HVIC> M81705FP HIGH VOLTAGE HIGH SIDE DRIVER VOL vs. Voltage VOH vs. Voltage 16 25 14 20 12 10 15 VOL (V) VOH (V) IO = 0mA IO = -20mA 10 IO = 150mA 8 6 IO = -75mA 4 5 IO = 20mA 2 15 18 21 24 18 21 VBS (V) ICC vs. Temperature IBS vs. Temperature 0.7 1.2 0.6 1.0 0.5 0.8 0.6 0.3 0.2 0.2 0.1 20 40 60 80 0.0 -20 100 24 0.4 0.4 0 15 VBS (V) 1.4 0.0 -20 IO = 0mA 0 12 IBS (mA) ICC (mA) 0 12 0 20 Ta (C) 40 60 80 100 Ta (C) IFS vs. Temperature VBSuvr vs. Temperature 50 12.5 VB = VS = 600V 12.0 VBSuvr (V) IFS (A) 40 30 20 10 0 -20 11.5 11.0 10.5 0 20 40 Ta (C) 60 80 100 10.0 -20 0 20 40 60 80 100 Ta (C) Mar. 2003 MITSUBISHI SEMICONDUCTORS <HVIC> M81705FP HIGH VOLTAGE HIGH SIDE DRIVER VIL vs. Temperature 4.0 2.5 3.5 2.0 VIL (V) VIH (V) VIH vs. Temperature 3.0 2.5 1.0 0 20 40 60 80 0.5 -20 100 20 40 60 Ta (C) tdLH vs. Temperature tdHL vs. Temperature 400 400 350 350 300 300 250 200 150 -20 0 Ta (C) tdHL (ns) tdLH (ns) 2.0 -20 1.5 80 100 80 100 80 100 250 200 0 20 40 60 80 150 -20 100 0 20 Ta (C) 40 60 Ta (C) VOL vs. Temperature VOH vs. Temperature 16 16 IO = 0mA IO = -20mA 12 IO = 150mA VOL (V) VOH (V) 12 8 IO = -75mA 4 8 4 IO = 20mA IO = 0mA 0 -20 0 20 40 Ta (C) 60 80 100 0 -20 0 20 40 60 Ta (C) Mar. 2003 MITSUBISHI SEMICONDUCTORS <HVIC> M81705FP HIGH VOLTAGE HIGH SIDE DRIVER IOL vs VOL (ROL1/ROL2 Switching Output Voltage) 200 IOL (mA) 150 VOth 100 50 0 3 0 6 9 12 15 VOL (V) PACKAGE OUTLINE 8P2S-A Plastic 8pin 225mil SOP EIAJ Package Code SOP8-P-225-1.27 Weight(g) 0.07 JEDEC Code - 8 Lead Material Cu Alloy e b2 E Recommended Mount Pad 1 Symbol F 4 A D G b x M A2 e A1 y L L1 HE e1 I2 5 c z Z1 Detail G Detail F A A1 A2 b c D E e HE L L1 z Z1 x y b2 e1 I2 Dimension in Millimeters Min Nom Max - - 1.9 0.05 - - - 1.5 - 0.35 0.4 0.5 0.13 0.15 0.2 4.8 5.0 5.2 4.2 4.4 4.6 - 1.27 - 5.9 6.2 6.5 0.2 0.4 0.6 - 0.9 - - 0.595 - - - 0.745 - - 0.25 - - 0.1 0 - 10 - 0.76 - - 5.72 - 1.27 - - Mar. 2003