Mar. 2003
APPLICATIONS
PDP, MOSFET and IGBT module inverter driver for AC-
servomotor and general purpose.
FEATURES
¡FLOATING SUPPLY VOL T AGE...................................600V
¡OUTPUT CURRENT .............................................+150mA
–125mA
¡HIGH SIDE DRIVER
¡SOP-8
DESCRIPTION
M81705FP is high voltage Power MOSFET and IGBT mod-
ule driver for half bridge applications.
BLOCK DIAGRAM
PIN CONFIGURATION (TOP VIEW)
Outline 8P2S
NC:NO INTERNAL CONNECTION
MITSUBISHI SEMICONDUCTORS <HVIC>
M81705FP
HIGH VOLTAGE HIGH SIDE DRIVER
VCC
VB
OUT
VS
IN
UV
DETECT
FILTER QR
S
R
INTER
LOCK
PULSE
GEN
HV
LEVEL
SHIFT
GND
VREG
3
24
5
6
7
1
2
3
45
6
7
8
NC
V
CC
IN
GND
NC
V
B
OUT
V
S
Mar. 2003
V
V
V
V
V
V
V/ns
W
mW/°C
°C/W
°C
°C
°C
V
V
V
V
V
VS+13.5
–5
13.5
13.5
0
—
—
—
—
—
VS+20
500
20
20
5
ABSOLUTE MAXIMUM RATINGS
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
Low Side Fixed Supply Voltage
Logic Input Voltage
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
VB > 13.5V
VBS = VB-VS
VB
VS
VBS
VCC
VIN
–0.5 ~ 624
VB–24 ~ VB+0.5
–0.5 ~ 24
VS–0.5 ~ VB+0.5
–0.5 ~ 24
–0.5 ~ 5.5
±50
0.60
–6.0
50
–20 ~ 125
–20 ~ 100
–40 ~ 125
VBS = VB-VS
Ta = 25°C, On Board
Ta > 25°C, On Board
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Logic Input Voltage
Allowable Offset Supply Voltage Transient
Package Power Dissipation
Linear Derating Factor
Junction-Case Thermal Resistance
Junction Temperature
Operation Temperature
Storage Temperature
VB
VS
VBS
VOUT
VCC
VIN
dVS/dt
PD
K q
Rth(j-c)
Tj
Topr
Tstg
Symbol Parameter Conditions Ratings Unit
RECOMMENDED OPERATING CONDITIONS
MITSUBISHI SEMICONDUCTORS <HVIC>
M81705FP
HIGH VOLTAGE HIGH SIDE DRIVER
0.0
0.2
0.4
0.6
0.8
0 25 50 75 100 125
Package Power Dissipation P
D
[W]
Temperature [°C]
THERMAL DERATING FACTOR CHARACTERISTIC
Mar. 2003
MITSUBISHI SEMICONDUCTORS <HVIC>
M81705FP
HIGH VOLTAGE HIGH SIDE DRIVER
µA
mA
mA
V
V
V
V
µA
µA
V
V
µs
mA
mA
mA
Ω
Ω
Ω
ns
ns
ns
ns
V
—
0.25
0.50
14.9
—
2.5
0.8
–50
–200
10.5
0.2
—
—
—
—
—
—
—
100
100
—
—
1.5
—
0.50
0.75
—
—
3.0
1.5
–20
–100
11.5
0.5
5
–125
40
150
120
50
100
—
—
220
110
2.5
1.0
0.75
1.00
—
0.1
4.0
2.0
—
—
12.5
0.8
—
—
—
—
160
60
130
500
500
—
—
4.0
Floating Supply Leakage Current
VBS Standby Current
VCC Standby Current
High Level Output Voltage
Low Level Output Voltage
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
High Level Input Bias Current
Low Level Input Bias Current
VBS Supply UV Reset Voltage
VBS Supply UV Hysteresis Voltage
VBS Supply UV Filter Time
Output High Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output High Level On Resistance
Output Low Level On Resistance1
Output Low Level On Resistance2
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
High Side Turn-On Rise Time
High Side Turn-Off Fall Time
R
OL1
/R
OL2
Switching Output Voltage
Symbol UnitParameter Test conditions Limits
Min. Typ.* Max.
VB=VS=600V
IO=0A
IO=0A
VIN=5V
VIN=0V
VO=0V, VIN=0V, PW<10µs
VO=1V, VIN=5V, PW<10µs
VO=15V, VIN=5V, PW<10µs
IO=–100mA, ROH=(VOH-VO)/IO
VO=1V, ROL1=VO/IO
VO=5V, ROL2=VO/IO
CL=1000pF between OUT – VS
CL=1000pF between OUT – VS
CL=1000pF between OUT – VS
CL=1000pF between OUT – VS
IFS
IBS
ICC
VOH
VOL
VIH
VIL
IIH
IIL
VBSuvr
VBSuvh
tVBSuv
IOH
IOL1
IOL2
ROH
ROL1
ROL2
tdLH
tdHL
tr
tf
VOth
ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS (=VB–VS)=15V, unless otherwise specified)
* Typ. is not specified.
Mar. 2003
MITSUBISHI SEMICONDUCTORS <HVIC>
M81705FP
HIGH VOLTAGE HIGH SIDE DRIVER
OUT
IN
VBS
VBSuvt VBSuvr
tVBSuv
VBSuvh
2.VBS Supply Under Voltage Lockout Timing Diagram
When VBS Supply Voltage keeps lower UV Trip Voltage (VBSuvt = VBSuvr – VBSuvh) for VBS Supply UV Filter Time, output
signal becomes “L”. And then, VBS Supply Voltage is higher UV Reset Voltage, output signal keeps “L” until next input
signal is “L”.
4.ROL1/ROL2 Switching Output Voltage VOth
OUT
IN
VOth
As shown by the solid line of the timing chart, the output on-resistance drops at ‘VOth’ level when the output is in the ‘L’
state (output level falls). Below the ‘VOth’ level, the output level falls more steeply.
TIMING DIAGRAM
1.Input/Output Timing Diagram
When input signal is “L”, then output signal “H”.
3.Allowable supply voltage transient
Firstly, supply VCC with voltage. Secondly, supply VBS with voltage. In the case of shutting off supply voltage, shut off
VBS Supply Voltage firstly. Secondly, shut off VCC Supply Voltage.
In case VBS or VCC is started too fast, output signal may be “H”.
Mar. 2003
PERFORMANCE CURVES
MITSUBISHI SEMICONDUCTORS <HVIC>
M81705FP
HIGH VOLTAGE HIGH SIDE DRIVER
ICC vs. Voltage
VCC (V)
ICC (mA)
12
0.0
0.2
0.4
0.8
0.6
1.0
15 18 21 24
IBS vs. Voltage
VBS (V)
12
0.0
0.2
0.4
0.6
0.8
1.0
15 18 21 24
IBS (mA)
VIH vs. Voltage
VCC (V)
VIH (V)
12
2.0
2.5
3.0
3.5
4.0
15 18 21 24
VIL vs. Voltage
VCC (V)
VIL (V)
12
0.5
1.0
1.5
2.0
2.5
15 18 21 24
tdLH vs. Voltage
VCC (V)
tdLH (ns)
12
200
220
240
280
260
300
15 18 21 24
tdHL vs. Voltage
VCC (V)
tdHL (ns)
12
160
180
200
240
220
260
15 18 21 24
Mar. 2003
MITSUBISHI SEMICONDUCTORS <HVIC>
M81705FP
HIGH VOLTAGE HIGH SIDE DRIVER
VOH vs. Voltage
VBS (V)
VOH (V)
12
0
5
10
20
15
25
15 18 21 24
VOL vs. Voltage
VBS (V)
12
0
2
6
10
8
16
4
12
14
15 18 21 24
VOL (V)
ICC vs. Temperature
Ta (°C)
ICC (mA)
–20
0.0
0.4
0.8
1.2
0.2
0.6
1.0
1.4
020 6040 80 100
IBS vs. Temperature
Ta (°C)
IBS (mA)
–20
0.0
0.2
0.4
0.6
0.1
0.3
0.5
0.7
020 6040 80 100
IFS vs. Temperature
Ta (°C)
IFS (µA)
–20
0
10
20
40
30
50
20 600 40 80 100
IO = 0mA
IO = 150mA
IO = 0mA
IO = 20mA
IO = –20mA
IO = –75mA
VB = VS = 600V
VBSuvr vs. Temperature
Ta (°C)
VBSuvr (V)
–20
10.0
10.5
11.0
12.0
11.5
12.5
20 6004080100
Mar. 2003
MITSUBISHI SEMICONDUCTORS <HVIC>
M81705FP
HIGH VOLTAGE HIGH SIDE DRIVER
V
IH
vs. Temperature
Ta (°C)
V
IH
(V)
–20
2.0
2.5
3.0
3.5
4.0
20 600 40 80 100
V
IL
vs. Temperature
Ta (°C)
V
IL
(V)
–20
0.5
1.0
1.5
2.0
2.5
20 600 40 80 100
t
dLH
vs. Temperature
Ta (°C)
t
dLH
(ns)
–20
150
250
300
200
350
400
020 6040 80 100
t
dHL
vs. Temperature
Ta (°C)
t
dHL
(ns)
–20
150
250
300
200
350
400
020 6040 80 100
V
OH
vs. Temperature
Ta (°C)
V
OH
(V)
–20
0
4
12
8
16
0408020 60 100
V
OL
vs. Temperature
Ta (°C)
V
OL
(V)
IO = 0mA
IO = –20mA
IO = –75mA
–20
0
4
12
8
16
0408020 60 100
IO = 150mA
IO = 20mA
IO = 0mA
Mar. 2003
MITSUBISHI SEMICONDUCTORS <HVIC>
M81705FP
HIGH VOLTAGE HIGH SIDE DRIVER
PACKAGE OUTLINE
V
OL
(V)
I
OL
(mA)
0
0
50
100
150
200
63 9 12 15
I
OL
vs V
OL
(R
OL1
/R
OL2
Switching Output Voltage)
VOth
SOP8-P-225-1.27 Weight(g)
–
JEDEC Code 0.07
EIAJ Package Code Lead Material
Cu Alloy
8P2S-A Plastic 8pin 225mil SOP
Symbol Min Nom Max
A
A2
b
c
D
E
H
E
L
L
1
y
b2
Dimension in Millimeters
A1
I2
0.05 ––
–1.5 –
0.35 0.4 0.5
0.13 0.15 0.2
4.8 5.0 5.2
4.2 4.4 4.6
–1.27 –
5.9 6.2 6.5
0.2 0.4 0.6
–0.9 –
––0.1
0°–10°
–0.76 –
–5.72 –
1.27 ––
––1.9
e
e
1
85
41
H
E
E
D
ey
FA
A
2
A
1
L
1
L
c
Detail F
eb
2
e
1
I
2
Recommended Mount Pad
z
Z
1
Detail G
x
–
–
Z
1
–
0.595
–
–
–
0.745
0.25
z
b
x
M
G